DPG30C300HB - IXYS - Datasheet.Global

DPG 30 C 300 HB

ns

HiPerFRED²

Symbol Definition

R a t i n g s

Features / Advantages:

typ. max.

I

FSM

I

R

A

V

240

IA

V

F

1.25

R1.70 K/W

V

R

=

1 2 3

min.

15

t = 10 ms

Applications:

V

RRM

V300

1T

VJ

V°C=

T

VJ

°C=mA0.08

Package:

Part number

V

R

=

T

VJ

=°C

I

F

=A

V

T

C

=140°C

d =

P

tot

90 WT

C

°C=

T

VJ

175 °C-55

V

I

RRM

=

=300

15

T

VJ

=45°C

DPG 30 C 300 HB

V

A

300

V300

25

max. repetitive reverse voltage

reverse current

forward voltage

virtual junction temperature

total power dissipation

max. forward surge current

Conditions Unit

1.50

T

VJ

°C=25

C

J

junction capacitance V = V; T

150

V

F0

V0.69T

VJ

=175°C

r

F

17.3

f = 1 MHz = °C25

mΩ

V1.00T

VJ

=°C

I

F

=A

V

15

1.27

I

F

=A30

I

F

=A30

2x

threshold voltage

slope resistance for power loss calculation only

Backside: cathode

3A

T

VJ

=°C

reverse recovery time

A6.5

35

55

ns

(50 Hz), sine

t

rr

=35 ns

● Housing:

High Performance Fast Recovery Diode

Low Loss and Soft Recovery

Common Cathode

TO-247

●rIndustry standard outline

●rEpoxy meets UL 94V-0

●rRoHS compliant

RVJ

I

RM

max. reverse recovery current

I

F

=A;15

25

T=125°C

VJ

-di

F

=A/µs200/dtt

rr

V

R

=V200

T

VJ

=°C25

T=125°C

VJ

µA

20150 pF

thermal resistance junction to case

thJC

rectangular 0.5

● Planar passivated chips

● Very low leakage current

● Very short recovery time

● Improved thermal behaviour

● Very low Irm-values

● Very soft recovery behaviour

● Avalanche voltage rated for reliable operation

● Soft reverse recovery for low EMI/RFI

● Low Irm reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating switch

● Antiparallel diode for high frequency

switching devices

● Antisaturation diode

● Snubber diode

● Free wheeling diode

● Rectifiers in switch mode power

supplies (SMPS)

● Uninterruptible power supplies (UPS)

FAV

average forward current

FAV

150

IXYS reserves the right to change limits, conditions and dimensions.

©

20100125a

Data according to IEC 60747and per diode unless otherwise specified

http://store.iiic.cc/

DPG 30 C 300 HB

I

RMS

A

per pin 50

R

thCH

K/W0.25

M

D

Nm1.2

mounting torque 0.8

T

stg

°C150

storage temperature -55

Weight g6

Symbol Definition Ratings

typ. max.min.Conditions

RMS current

thermal resistance case to heatsink

Unit

I is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.

In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting

the backside.

F

C

N120

mounting force with clip 20

Ordering Delivering Mode Base Qty Code Key

Standard

Part Name

DPG 30 C 300 HB 502567Tube 30

XXXXXX

YYWW

Logo

Marking on product

DateCode

Assembly Code

abcdef

Product Marking

D

P

G

30

C

300

HB

Part number

Diode

HiPerFRED

extreme fast

Common Cathode

TO-247AD (3)

=

DPG30C300PB

DPG30C300PC

TO-220AB (3)

TO-263AB (D2Pak)

Similar Part Package

1)

1

)

Marking on Product

DPG30C300HB

300

Voltage Class

Current Rating [A]

Reverse Voltage [V]

=

RMS

IXYS reserves the right to change limits, conditions and dimensions.

©

20100125a

Data according to IEC 60747and per diode unless otherwise specified

http://store.iiic.cc/

DPG 30 C 300 HB

Sym. Inches Millimeter

min. max. min. max.

A 0.185 0.209 4.70 5.30

A1 0.087 0.102 2.21 2.59

A2 0.059 0.098 1.50 2.49

D 0.819 0.845 20.79 21.45

E 0.610 0.640 15.48 16.24

E2 0.170 0.216 4.31 5.48

e 0.215 BSC 5.46 BSC

L 0.780 0.800 19.80 20.30

L1 - 0.177 - 4.49

Ø P 0.140 0.144 3.55 3.65

Q 0.212 0.244 5.38 6.19

S 0.242 BSC 6.14 BSC

b 0.039 0.055 0.99 1.40

b2 0.065 0.094 1.65 2.39

b4 0.102 0.135 2.59 3.43

c 0.015 0.035 0.38 0.89

D1 0.515 - 13.07 -

D2 0.020 0.053 0.51 1.35

E1 0.530 - 13.45 -

Ø P1 - 0.29 - 7.39

Outlines TO-247

IXYS reserves the right to change limits, conditions and dimensions.

©

20100125a

Data according to IEC 60747and per diode unless otherwise specified

http://store.iiic.cc/

DPG 30 C 300 HB

100 300 5000 200 400 600

20

30

40

50

60

70

0 20 40 60 80 100 120 140 160

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

K

f

T

VJ

[°C]

0 100 200 300 400 500 600

0

2

4

6

8

10

12

14

16

0

100

200

300

400

V

FR

[V]

0 100 200 300 400 500 600

0

2

4

6

8

10

12

14

16

0 100 200 300 400 500 600

0.0

0.1

0.2

0.3

0.4

0.5

0.0 0.5 1.0 1.5 2.0 2.5

0

20

40

60

80

I

RM

[A]

Q

rr

[µC]

I

F

[A]

V

F

[V] -di

F

/dt [A/µs]

t

rr

[ns]

V

FR

t

fr

I

RM

Q

rr

7.5 A

-di

F

/dt [A/µs]

-di

F

/dt [A/µs]

7.5 A

15 A

I

F

=30 A

-di

F

/dt [A/µs]

t

fr

[ns]

1 10 100 1000 10000

0.6

0.8

1.0

1.2

1.4

1.6

1.8

t[ms]

Z

thJC

[K/W]

0 100 200 300 400 500 600

0

2

4

6

8

10

12

14

16

E

rec

[µJ]

-di

F

/dt [A/µs]

30 A

15 A

Fig. 1 Forward current I

F

vs. V

F

Fig. 2 Typ. reverse recovery charge

Q

rr

versus -di

F

/dt

Fig. 3 Typ. peak reverse current

I

RM

versus -di

F

/dt

Fig. 4 Dynamic parameters

Q

rr

, I

RM

versus T

VJ

Fig. 5 Typ. recovery time t

rr

vs. -di

F

/dt Fig. 6 Typ. peak forward voltage

V

FR

and t

fr

versus di

F

/dt

Fig. 7 Typ. recovery energy

E

rec

versus -di

F

/dt

Fig. 8 Transient thermal resistance junction to case

T

VJ

=25°C

150°C

I

F

= 30 A

I

F

= 15 A

I

F

=7.5A

I

F

=30 A

I

F

=15 A

I

F

=7.5 A

T

VJ

= 125°C

V

R

= 200 V

T

VJ

= 125°C

I

F

= 15 A

V

R

=200V

T

VJ

= 125°C

V

R

=200V

T

VJ

=125°C

V

R

= 200 V

T

VJ

=125°C

V

R

= 200 V

IXYS reserves the right to change limits, conditions and dimensions.

©

20100125a

Data according to IEC 60747and per diode unless otherwise specified

http://store.iiic.cc/