BUZ 90 A SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 90 A 600 V 4A 2 TO-220 AB C67078-S1321-A3 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 30 C Values Unit A 4 IDpuls Pulsed drain current TC = 25 C 16 Avalanche current,limited by Tjmax IAR 4.5 Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse EAR 8 mJ EAS ID = 4.5 A, VDD = 50 V, RGS = 25 L = 29 mH, Tj = 25 C 320 Gate source voltage VGS Power dissipation Ptot TC = 25 C 20 V W 75 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC 1.67 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group C 55 / 150 / 56 1 07/96 BUZ 90 A Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage 600 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS A VDS = 600 V, VGS = 0 V, Tj = 25 C - 0.1 1 VDS = 600 V, VGS = 0 V, Tj = 125 C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 RDS(on) VGS = 10 V, ID = 2.8 A Semiconductor Group nA - 2 1.7 2 07/96 BUZ 90 A Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS 2 * ID * RDS(on)max, ID = 2.8 A Input capacitance 2.5 pF - 780 1050 - 110 170 - 40 70 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 3.8 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 2.6 A RGS = 50 Rise time - 20 30 - 50 75 - 120 150 - 70 90 tr VDD = 30 V, VGS = 10 V, ID = 2.6 A RGS = 50 Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 2.6 A RGS = 50 Fall time tf VDD = 30 V, VGS = 10 V, ID = 2.6 A RGS = 50 Semiconductor Group 3 07/96 BUZ 90 A Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed - - 16 V 1.1 1.2 trr ns - 350 - Qrr VR = 100 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 - VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge - VSD VGS = 0 V, IF = 8 A Reverse recovery time - ISM TC = 25 C Inverse diode forward voltage A C - 4 3 - 07/96 BUZ 90 A Drain current ID = (TC) parameter: VGS 10 V Power dissipation Ptot = (TC) 4.5 80 A W Ptot ID 3.5 60 3.0 50 2.5 40 2.0 30 1.5 20 1.0 10 0.5 0.0 0 0 20 40 60 80 100 120 C 0 160 20 40 60 80 100 120 TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C C 160 TC Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 10 2 K/W A ID ZthJC t = 18.0s p 10 0 10 1 D 100 s DS /I 10 -1 1 ms =V D = 0.50 DS (on ) 0.20 0.10 R 10 0 0.05 10 -2 10 ms 0.02 0.01 single pulse 10 -1 10 0 10 1 10 2 DC V 10 10 3 10 VDS Semiconductor Group -3 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 90 A Typ. output characteristics ID = (VDS) Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS parameter: tp = 80 s 9 l 6.5 Ptot = 75W k i j hg f e a A ID RDS (on) d b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 k 10.0 b l 20.0 6 5 c 4 3 5.0 4.5 4.0 3.5 3.0 d 2.5 e f g h j i 2.0 1.0 0 0 a 5 10 15 20 25 30 35 40 k 1.5 2 1 c 5.5 VGS [V] a 4.0 7 b VGS [V] = 0.5 V 0.0 0.0 50 a 4.0 4.5 b 5.0 1.0 c 5.5 2.0 d 6.0 e f 6.5 7.0 3.0 4.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 5.0 6.0 A VDS 8.0 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max parameter: tp = 80 s, VDS2 x ID x RDS(on)max 6.0 5.0 A S 5.0 ID gfs 4.5 4.0 3.5 4.0 3.0 3.5 3.0 2.5 2.5 2.0 2.0 1.5 1.5 1.0 1.0 0.5 0.5 0.0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 A ID 6 07/96 5.0 BUZ 90 A Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 2.8 A, VGS = 10 V 8.0 4.6 4.0 V RDS (on) VGS(th) 98% 3.6 6.0 typ 3.2 5.0 2.8 2.4 4.0 2% 2.0 98% 3.0 1.6 typ 1.2 2.0 0.8 1.0 0.4 0.0 -60 -20 20 60 100 C 0.0 -60 160 -20 20 60 100 C Tj Typ. capacitances 160 Tj Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF C 10 0 10 1 Ciss 10 -1 10 0 Coss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Crss Tj = 150 C (98%) 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 07/96 3.0 BUZ 90 A Avalanche energy EAS = (Tj ) parameter: ID = 4.5 A, VDD = 50 V RGS = 25 , L = 29 mH Typ. gate charge VGS = (QGate) parameter: ID puls = 7 A 340 16 mJ V EAS 280 VGS 12 240 10 200 0,2 VDS max 8 160 6 120 80 4 40 2 0 20 0,8 VDS max 0 40 60 80 100 120 C 160 Tj 0 10 20 30 40 nC Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 710 V 680 V(BR)DSS 660 640 620 600 580 560 540 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07/96 60 BUZ 90 A Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96