FIELD-EFFECT TRANSISTORS (continued) TMOS Power MOSFETs (continued) | 'ds (on) Vas (t/h) ipss |(pRypss} ass Ciss Crss ton tott (Vv) Q 1D HA (V) (nA) (pt) (pt) (ns) (ns) Package | Device Max (A) Min Max Max Min Max Max Max Max Max IRFD213 2.4 0.3 2 4 250 150 500 150 25 15 15 IRFD220 0.8 0.4 2 4 250 200 500 600 80 40 100 IRFD221 0.8 0.4 2 4 250 150 500 600 80 40 100 IRFD222 1.2 0.4 2 4 250 200 500 600 80 40 100 IRFD223 1.2 0.4 2 4 250 150 500 600 80 40 100 FET DIP | IRFD9120 0.6 0.8 2 4 250 100 500 450 100 50 100 PCH | IRFD9121 0.8 0.8 2 4 250 60 500 100 100 50 100 TYPES 1 WATT IRFD9210 3.0 0.3 2 4 250 200 500 300 35 15 15 IRFD9213 4.5 0.3 2 4 250 150 500 300 35 15 15 IRFD8110 4.2 0.3 2 4 250 100 500 250 35 30 40 IRFD9113 1.6 -03 2 4 250 60 500 250 35 30 40 FET DIP | IRFD110 0.6 0.8 2 4 250 100 500 200 25 20 25 NCH | IRFD111 0.6 0.8 2 4 250 60 500 200 25 20 25 TYPES | IRFD112 0.8 0.8 2 4 250 100 500 200 25 20 25 1 WATT | IRFD113 0.80 0.80 2 4 250 60 500 200 25 20 25 IRFD120 2.4 0.25 2 4 250 100 500 70 10 20 25 (RFD123 3.2 0.25 2 4 250 60 500 70 10 20 25 IRFD120 0.30 0.6 2 4 250 100 500 600 100 40 100 IRFD121 0.3 0.6 2 4 250 60 500 600 100 40 100 IRFD122 0.4 0.6 2 4 250 100 500 600 100 40 100 IRFD123 0.40 0.6 2 4 250 60 500 600 100 40 100 IRFD210 1.5 0.3 2 4 250 200 500 150 25 15 15 IRFD211 1.5 0.3 2 4 250 150 500 150 25 15 15 IRFD212 2.4 0.3 2 4 250 200 500 150 25 15 15 TO226AE| MPF89 6.4 25 1.0 2.7 60 200 100 90 3.5 15 15 NCH | MPF930 1.4 1.0 1.0 3.5 10 35 50 70 18 15 16 TYPES | MPF960 1.7 1.0 1.0 3.5 10 60 50 70 18 15 15 1 WATT | MPF990 2.0 1.0 1.0 3.6 10 90 50 70 18 16 15 MPF910 5.0 0.5 0.8 2.5 10 60 10 38t 4.5+ 5.0+ 5.0+ MPF1I0LM 75 0.5 0.8 2.5 10 60 100 60 5.0 10 10 MPF6659 1.8 1.0 0.8 2.0 500 35 100 50 10 5.0 5.0 MPF6660 3.0 1.0 0.8 2.0 500 60 100 50 10 5.0 5.0 MPF6661 4.0 1.0 0.8 2.0 500 90 100 50 10 5.0 5.0 MPF 1010 6.0 _ 0.3 2.5 10 100 10 357+ 6t 5.0+ 5.0+ MOTOROLA EUROPEAN MASTER SELECTION GUIDE 3-63