Preliminary Technical Information IXGR72N60B3H1 GenX3TM 600V IGBT VCES IC110 VCE(sat) tfi(typ) (Electrically Isolated Back Surface) = = = 600V 40A 1.80V 92ns Medium Speed Low Vsat PT IGBT for 5-40 kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C (Limited by Leads) 75 A IC110 TC = 110C 40 A IF110 TC = 110C 34 A ICM TC = 25C, 1ms 450 A SSOA VGE = 15V, TVJ = 125C, RG = 3 ICM = 240 A (RBSOA) Clamped Inductive Load VCE 600 V PC TC = 25C 200 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 2500 3000 V~ V~ 20..120/4.5..27 N/lb TJ VISOL 50/60 Hz, RMS, t = 1minute IISOL < 1mA t = 20 seconds FC Mounting Force TL Maximum Lead Temperature for Soldering 300 C TSOLD 1.6mm (0.062 in.) from Case for 10s 260 C 5 g Weight G C ISOLATED TAB E G = Gate E = Emitter C = Collector Features z z z z z z Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V Electrical Isolation Optimized for Low Conduction and Switching Losses Square RBSOA Anti-Parallel Ultra Fast Diode Advantages z z High Power Density Low Gate Drive Requirement Applications * Switch-Mode and Resonant-Mode Power Supplies Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGE(th) IC ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = 20V VCE(sat) IC = 60A, VGE = 15V, Note 1 IC = 120A Characteristic Values Min. Typ. Max. = 250A, VCE = VGE 3.0 TJ = 125C (c) 2009 IXYS CORPORATION, All Rights Reserved 1.50 1.75 5.0 V 300 5 A mA 100 nA 1.80 * Uninterruptible Power Supplies (UPS) * DC Choppers * AC Motor Speed Control * DC Servo and Robot Drives V V DS99875A(03/09) IXGR72N60B3H1 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 50A, VCE = 10V, Note 1 45 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz 76 S 6800 576 80 pF pF pF 225 40 82 nC nC nC 31 ns 33 1.4 ns mJ Qg Qge Qgc IC = 60A, VGE = 15V, VCE = 0.5 * VCES td(on) tri Eon td(off) tfi Inductive load, TJ = 25C IC = 50A, VGE = 15V VCE = 480V, RG = 3 Eoff td(on) tri Eon td(off) tfi Eoff ISOPLUS247 (IXGR) Outline Inductive load, TJ = 125C IC = 50A, VGE = 15V VCE = 480V, RG = 3 RthJC RthCS 152 240 ns 92 150 ns 1.0 2.0 mJ 29 34 2.7 228 142 2.2 ns ns mJ ns ns mJ 0.15 0.62 C/W C/W Reverse Diode (FRED) (TJ = 25C, Unless Otherwise Specified) Symbol Test Conditions Characteristic Values Min. Typ. Max. VF IF = 60A, VGE = 0V, Note 1 IRM IF = 60A, VGE = 0V, TJ = 100C -diF/dt = 200A/s, VR = 300V IF = 60A, -di/dt = 200A/s, VR = 300V, TJ = 100C trr 1.6 1.4 TJ = 150C V V 8.3 A 140 ns RthJC Note 1. 2.0 1.8 0.8 C/W Pulse Test, t 300s; Duty Cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGR72N60B3H1 Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 120 330 VGE = 15V 13V 11V 100 270 9V 240 80 60 IC - Amperes IC - Amperes VGE = 15V 13V 11V 300 7V 40 210 9V 180 150 120 90 7V 60 20 30 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 1 2 5 6 7 8 125 150 7.5 8.0 1.3 120 VGE = 15V 13V 11V 9V VGE = 15V 1.2 VCE(sat) - Normalized 100 IC - Amperes 4 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125C 80 60 7V 40 20 I C = 120A I C = 60A 1.1 1.0 0.9 I 0.8 5V C = 30A 0.7 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 2.4 -25 0 VCE - Volts 100 160 = 120A 60A 30A 140 IC - Amperes C 75 Fig. 6. Input Admittance TJ = 25C 4.0 I 50 180 4.5 3.5 25 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage VCE - Volts 3 VCE - Volts VCE - Volts 3.0 2.5 120 100 80 TJ = 125C 25C - 40C 60 2.0 40 1.5 20 1.0 0 5 6 7 8 9 10 11 VGE - Volts (c) 2009 IXYS CORPORATION, All Rights Reserved 12 13 14 15 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 IXGR72N60B3H1 Fig. 7. Transconductance Fig. 8. Gate Charge 130 16 120 TJ = - 40C 25C 125C 100 90 I C = 60A I G = 10mA 12 80 VGE - Volts g f s - Siemens VCE = 300V 14 110 70 60 50 10 8 6 40 4 30 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 IC - Amperes Fig. 9. Capacitance 120 140 160 180 200 220 240 Fig. 10. Reverse-Bias Safe Operating Area 280 10,000 Cies 240 200 1,000 IC - Amperes Capacitance - PicoFarads 100 QG - NanoCoulombs Coes 100 160 120 80 Cres 40 f = 1 MHz 10 0 5 10 15 20 25 30 35 40 TJ = 125C RG = 3 dV / dt < 10V / ns 0 100 200 300 VCE - Volts 400 500 600 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - C / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_72N60B3(76)02-10-09-D IXGR72N60B3H1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 8 9 7 8 C =100A 7 VCE = 480V 5 TJ = 125C , VGE = 15V I C = 50A 2 4 1 5 10 15 20 25 30 35 40 45 50 4 4 3 3 TJ = 25C 20 55 30 40 50 7 on ---- RG = 3 , VGE = 15V 3 I C = 50A VCE = 480V 2 - MilliJoules 4 t f i - Nanoseconds 5 2 1 35 45 55 65 75 85 95 105 115 1000 I C = 100A 180 850 160 I C 140 550 I C 5 10 15 t f i - Nanoseconds 50 55 245 220 180 130 175 110 160 TJ = 25C 70 70 100 45 200 205 60 40 235 190 50 35 260 150 40 30 220 VCE = 480V 30 25 80 IC - Amperes (c) 2009 IXYS CORPORATION, All Rights Reserved 90 230 I C = 25A, 50A, 100A 160 215 140 200 120 185 100 145 80 130 100 60 tr i td(off) - - - - RG = 3 , VGE = 15V 170 155 VCE = 480V 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 140 125 t d(off) - Nanoseconds RG = 3 , VGE = 15V 20 20 250 t d(off) - Nanoseconds td(off) - - - - 90 250 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature t f i - Nanoseconds TJ = 125C 170 TJ = 125C, VGE = 15V RG - Ohms 230 tf i 400 td(off) - - - - VCE = 480V 0 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 190 tf i = 25A TJ - Degrees Centigrade 210 700 = 50A 80 0 125 1150 200 100 I C = 25A 25 = 25A, 50A, 100A 120 1 0 C t d(off) - Nanoseconds = 100A 4 Eon 0 100 90 1300 I 220 6 Eoff 80 240 E Eoff - MilliJoules 6 3 70 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 7 C 60 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature I 2 1 RG - Ohms 5 5 0 1 0 TJ = 125C 1 2 0 VCE = 480V 5 2 3 I C = 25A 6 - MilliJoules 3 --- ---- RG = 3 , VGE = 15V on Eoff - MilliJoules Eon - 4 Eon E 6 on E 5 7 Eoff 6 Eoff - MilliJoules I 6 Eoff - MilliJoules 7 IXGR72N60B3H1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 170 140 150 TJ = 125C, VGE = 15V VCE = 480V t r i - Nanoseconds 70 95 90 80 70 65 I 50 C I C 5 10 15 25 30 35 40 45 50 VCE = 480V 32 TJ = 25C, 125C 60 31 50 25C < TJ < 125C 30 30 28 35 20 27 20 10 = 25A 20 33 RG = 3 , VGE = 15V 29 50 10 td(on) - - - - 40 = 50A 30 0 34 tr i 55 20 RG - Ohms 30 40 50 60 70 80 90 t d(on) - Nanoseconds = 100A 110 - Nanoseconds 110 C 80 d(on) I 125 t 130 90 td(on) - - - - t r i - Nanoseconds tr i 26 100 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 100 35 90 34 33 I C = 100A tr i 70 td(on) - - - - RG = 3 , VGE = 15V 60 VCE = 480V 50 32 31 30 I C = 50A 40 29 30 28 20 t d(on) - Nanoseconds t r i - Nanoseconds 80 27 I 10 C = 25A 26 0 25 35 45 55 65 75 85 95 105 115 25 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_72N60B3(76)02-10-09-D IXGR72N60B3H1 Fig. 21 Forward Current IF vs. VF Fig. 24 Typ. Dynamic Parameters Qrr, IRM Fig. 22 Typ. Reverse Recovery Charge Qrr Fig. 23 Typ. Peak Reverse Current IRM Fig. 25 Typ Recovery Time trr Z(th)JC - [ C / W ] 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width [s] Fig. 26 Maximum Transient Thermal Impedance Junction to Case (for Diode) (c) 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: G_72N60B3(76)02-10-09-D