© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 9 1Publication Order Number:
PZT751T1/D
PZT751
PNP Silicon Planar
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in
industrial and consumer applications. The device is housed in the
SOT−223 package which is designed for medium power surface
mount applications.
Features
•High Current
•The SOT−223 Package can be soldered using wave or reflow.
•SOT−223 Package Ensures Level Mounting, Resulting in
Improved Thermal Conduction, and Allows Visual Inspection of
Soldered Joints. The Formed Leads Absorb Thermal Stress During
Soldering, Eliminating the Possibility of Damage to the Die
•NPN Complement is PZT651T1G
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO −60 Vdc
Collector−Base Voltage VCBO −80 Vdc
Emitter−Base Voltage VEBO −5.0 Vdc
Collector Current IC−2.0 Adc
Total Power Dissipation
@ TA = 25°C (Note 1)
Derate above 25°C
PD0.8
6.4
W
mW/°C
Storage Temperature Range Tstg −65 to 150 °C
Junction Temperature TJ150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. Device mounted on a FR−4 glass epoxy printed circuit board using minimum
recommended footprint.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Resistance from Junction−to−
Ambient in Free Air RqJA 156 °C/W
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
TL260
10
°C
Sec
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
www.onsemi.com
SOT−223 PACKAGE HIGH CURRENT
NPN SILICON TRANSISTOR
SURFACE MOUNT
SOT−223
CASE 318E
STYLE 1
COLLECTOR 2, 4
BASE
1
EMITTER 3
Device Package Shipping†
ORDERING INFORMATION
PZT751T1G SOT−223
(Pb−Free) 1,000 / Tape & Ree
l
MARKING DIAGRAM
A = Assembly Location
Y = Year
W = Work Week
G= Pb−Free Package
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
1
AYW
ZT751G
G
(Note: Microdot may be in either location)
SPZT751T1G SOT−223
(Pb−Free) 1,000 / Tape & Ree
l
123
4
PZT751
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0) V(BR)CEO −60 −Vdc
Collector−Emitter Breakdown Voltage
(IC = −100 mAdc, IE = 0) V(BR)CBO −80 −Vdc
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 −Vdc
Base−Emitter Cutoff Current
(VEB = −4.0 Vdc) IEBO −−0.1 mAdc
Collector−Base Cutoff Current
(VCB = −80 Vdc, IE = 0) ICBO −−100 nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = −50 mAdc, VCE = −2.0 Vdc)
(IC = −500 mAdc, VCE = −2.0 Vdc)
(IC = −1.0 Adc, VCE = −2.0 Vdc)
(IC = −2.0 Adc, VCE = −2.0 Vdc)
hFE 75
75
75
40
−
−
−
−
−
Collector−Emitter Saturation Voltages
(IC = −2.0 Adc, IB = −200 mAdc)
(IC = −1.0 Adc, IB = −100 mAdc)
VCE(sat) −
−−0.5
−0.3
Vdc
Base−Emitter Voltages
(IC = −1.0 Adc, VCE = −2.0 Vdc) VBE(on) −−1.0 Vdc
Base−Emitter Saturation Voltage
(IC = −1.0 Adc, IB = −100 mAdc) VBE(sat) −−1.2 Vdc
Current−Gain−Bandwidth
(IC = −50 mAdc, VCE = −5.0 Vdc, f = 100 MHz) fT75 − MHz
2. Pulse Test: Pulse Width ≤300 ms, Duty Cycle = 2.0%.
PZT751
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3
TYPICAL CHARACTERISTICS
IC, COLLECTOR CURRENT (mA)
-10 -20 -50 -100 -200 -500
hFE, DC CURRENT GAIN
250
0
25
50
75
100
125
200
175
150
225
-1.0 A -2.0 A -4.0 A
VCE = -2.0 V
TJ = 125°C
25°C
-55°C
Figure 1. Typical DC Current Gain
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
0
Figure 2. On Voltages
-50
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.4
-0.8
-0.6
-0.2
-100 -200 -500 -1.0 A -2.0 A -4.0 A
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 2.0 V
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ = 25°C
IC = -10 mA IC = -100 mA
IC = -500 mA IC = -2.0 A
-0.05
-1.0
0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100-200 -500
PZT751
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4
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
A1
b1
D
E
b
e
e1
4
123
0.08 (0003)
A
L1
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
2. CONTROLLING DIMENSION: INCH.
1.5
0.059 ǒmm
inchesǓ
SCALE 6:1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091 2.3
0.091
2.0
0.079
SOLDERING FOOTPRINT*
HEDIM
AMIN NOM MAX MIN
MILLIMETERS
1.50 1.63 1.75 0.060
INCHES
A1 0.02 0.06 0.10 0.001
b0.60 0.75 0.89 0.024
b1 2.90 3.06 3.20 0.115
c0.24 0.29 0.35 0.009
D6.30 6.50 6.70 0.249
E3.30 3.50 3.70 0.130
e2.20 2.30 2.40 0.087
0.85 0.94 1.05 0.033
0.064 0.068
0.002 0.004
0.030 0.035
0.121 0.126
0.012 0.014
0.256 0.263
0.138 0.145
0.091 0.094
0.037 0.041
NOM MAX
L1 1.50 1.75 2.00 0.060
6.70 7.00 7.30 0.264 0.069 0.078
0.276 0.287
HE− −
e1
0°10°0°10°
q
q
L
L0.20 −−− −−− 0.008 −−− −−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
PZT751T1/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loc
al
Sales Representative
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