2SA949
2004-07-07
1
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA949
Driver-Stage Audio Amplifier Applications
High-Voltage Switching Applications
• High breakdown voltage: VCEO = −150 V
• Low output capacitance: Cob = 5.0 pF (max)
• High transition frequency: fT = 120 MHz (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO −150 V
Collector-emitter voltage VCEO −150 V
Emitter-base voltage VEBO −5 V
Collector current IC −50 mA
Base current IB 5 mA
Collector power dissipation PC 800 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = −150 V, IE = 0 ― ― −0.1 µA
Emitter cut-off current IEBO V
EB = −5 V, IC = 0 ― ― −0.1 µA
DC current gain hFE
(Note)
VCE = −5 V, IC = −10 mA 70 ― 240
Collector-emitter saturation voltage VCE (sat) I
C = −10 mA, IB = −1 mA ― ― −0.8 V
Base-emitter voltage VBE V
CE = −5 V, IC = −30 mA ― ― −0.9 V
Transition frequency fT V
CE = −30 V, IC = −10 mA ― 120 ― MHz
Collector output capacitance Cob V
CB = −10 V, IE = 0, f = 1 MHz ― 4.0 5.0 pF
Note: hFE classification O: 70 to 140, Y: 120 to 240
Marking
Unit: mm
JEDEC TO-92MOD
JEITA ―
TOSHIBA 2-5J1A
Weight: 0.36 g (typ.)
A949
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics
indicator
Part No. (or abbreviation code)
2SA949
2004-07-07
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Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (mA)
−60
0
0
Common emitter
Ta = 2 5° C
−200
IB = −100 µA
−300
−400
−500
−600
−2 −4 −6 −8 −10 −12
−10
−20
−30
−40
−50
−25 25 Ta = 100°C
−60
0
0
Common emitter
VCE = −5 V
−0.2 −0.4 −0.6 −0.8 −1.0
−10
−20
−30
−40
−50
Collector current IC (mA)
hFE – IC
DC current gain hFE
Collector current IC (mA)
VCE (sat) – IC
Collector-emitter saturation voltage VCE (sat) (V)
Collector-emitter voltage VCE (V)
Safe Operating Area
Collector current IC (mA)
−25
25
Ta = 100°C
1000
10
−0.3
Common emitter
VCE = −5 V
−0.5 −1 −3 −5−10 −30 −50 −100
30
50
100
300
500
−25
25
Ta = 100°C
−5
−0.01
−0.3
Common emitter
IC/IB = 10
−0.5 −1−3−5−10 −30 −50 −100
−0.03
−0.05
−0.1
−0.3
−0.5
−1
−3
Ambient temperature Ta (°C)
PC – Ta
Collector power dissipation PC (W)
1.2
0
0 20 40 60 80 100 120 140 160
0.2
0.4
0.6
0.8
1.0
−50
−1
−3
*: Single nonrepetitive
pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
DC operation
Ta = 25°C
100 ms* IC max (pulsed)*
−5 −10 −30 −50 −100 −300
−3
−5
−10
−30
−100
−300
IC max (continuous) 0.5 s*
VCEO max
2SA949
2004-07-07
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may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
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Handbook” etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
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and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
