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Complementary silicon power transistors.
The MJ15003 powerbaseTM power transistors designed for high power audio,
disk head positioners and other linear applications.
Features:
•High safe operating area (100% tested) - 5.0A at 50V.
•For low distortion complementary designs.
•High DC current gain - hFE = 25 (minimum) at IC= 5A dc.
•Pb-free package.
(TO-3)
Style 1:
Pin 1. Base
2. Emitter
Collector (Case)
20 Ampere
Power Transistors
Complementary Silicon
140 Volts, 250 Watts
(TO-3)
Case 1-07
Style 1
Dimensions Minimum Maximum
A1.550 (39.37) Reference
B - 1.050 (26.67)
C 0.250 (6.35) 0.335 (8.51)
D0.038 (0.97) 0.043 (1.09)
E0.055 (1.40) 0.070 (1.77)
G0.430 (10.92) BSC
H0.215 (5.46) BSC
K0.440 (11.18) 0.480 (12.19)
L0.665 (16.89) BSC
N - 0.830 (21.08)
Q0.151 (3.84) 0.165 (4.19)
U1.187 (30.15) BSC
V0.131 (3.33) 0.188 (4.77)
Dimensions : Inches (Millimetres)
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Rating Symbol Value Unit
Collector-Emitter Voltage VCEO
140
V dcCollector-Base Voltage VCBO
Emitter-Base Voltage VEBO 5
Collector Current - Continuous IC20
Adc
Base Current - Continuous IB5
Emitter Current - Continuous IE25
Total Device Dissipation at TC= 25°C
Derate above 25°C PD250
1.43
W
W/°C
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
Maximum Ratings (Note 1)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual
stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional
operation is not implied, damage may occur and reliability may be affected.
Characteristics Symbol Maximum Unit
Thermal Resistance, Junction-to-Case RθJC 0.70 °C/W
Maximum Lead Temperature for Soldering Purpose 1/6 inches
from Case for ≤10 Seconds TL265 °C
Thermal Characteristics
Electrical Characteristics (TC= 25°C unless otherwise noted)
Characteristic Symbol Minimum Maximum Unit
Off Characteristics
Collector-Emitter Sustaining Voltage (Note 1)
(lC = 200mA dc, lB= 0) VEO (sus) 140 - V dc
Collector Cut off Current
(VCE = 140V dc, VBE (off) = 1.5V dc)
(VCE = 140V dc, VBE (off) = 1.5V dc, TC= 150°C)
ICEX - 100
2
µAdc
mA dc
Collector Cut off Current
(VCE = 140V dc, IB = 0) ICEO - 250
µAdc
Emitter Cut off Current
(VEB = 5V dc IC= 0 ) IEBO - 100
Second Breakdown
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50V dc, t = 1s (non repetitive))
(VCE = 100V dc, t = 1s (non repetitive))
IS/b 5.0
1.0
-Adc
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Electrical Characteristics (TC= 25°C unless otherwise noted)
Characteristic Symbol Minimum Maximum Unit
On Characteristic
DC Current Gain
(lC= 5A dc, VCE = 2V dc) hFE 25 150 -
Collector-Emitter Saturation Voltage
(lC= 5A dc, IB= 0.5A dc) VCE (sat) - 1.0
V dc
Base-Emitter On Voltage
(lC= 5A dc, VCE = 2V dc) VBE (on) - 2.0
Dynamic Characteristics
Current-Gain - Bandwidth Product
(lC= 0.5A dc, VCE = 10V dc, ftest = 0.5MHz) fT2.0 - MHz
Output Capacitance
(VCB = 10V dc, IE= 0, ftest = 1MHz) Cob - 1000 pF
1. Pulse Test : Pulse Width = 300µs, Duty Cycle ≤2%.
VCE, Collector-Emitter Voltage (Volts)
Active - Region Safe Operating Area
IC, Collector Current (Amperes)
There are two limitation on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC - VCE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than curves indicate.
The data is based on TJ (PK) = 200°C; TCis variable depending on
conditions. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Part Number Table
Description Part Number
Transistor, NPN, TO-3 MJ15003
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