ON Semiconductor High-Power NPN Silicon Transistors 2N6338 2N6341* . . . designed for use in industrial-military power amplifier and switching circuit applications. * High Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) - 2N6338 = 150 Vdc (Min) - 2N6341 * High DC Current Gain - hFE = 30 - 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc * Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc * Fast Switching Times @ IC = 10 Adc tr = 0.3 ms (Max) ts = 1.0 ms (Max) tf = 0.25 ms (Max) *ON Semiconductor Preferred Device 25 AMPERE POWER TRANSISTORS NPN SILICON 100, 120, 140, 150 VOLTS 200 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIII IIII IIIIII IIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIII IIII IIIIII IIIII III IIIIIIIII IIII IIIIII IIIII III IIIIIIIII IIII IIIIIIIIII III IIIIII IIIII IIIIIIIII IIII IIIIIIIIII III IIIIIIIII IIII IIIIIIIIII III IIIIIIIII IIII IIIIIIIIII III IIIIIIIII IIII IIIIIIIIII III IIIIIIIII IIII IIIIIIIIII III IIIIIIIII IIII IIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIII IIII IIIIIIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III *MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Symbol 2N6338 2N6341 Unit VCB 120 180 Vdc VCEO 100 150 Vdc VEB Collector Current Continuous Peak IC Base Current IB Total Device Dissipation @ TC = 25C Derate above 25C PD 6.0 CASE 1-07 TO-204AA (TO-3) Vdc Adc 25 50 Operating and Storage Junction Temperature Range TJ, Tstg 10 Adc 200 1.14 Watts W/C -65 to +200 C THERMAL CHARACTERISTICS Characteristic PD, POWER DISSIPATION (WATTS) Thermal Resistance, Junction to Case *Indicates JEDEC Registered Data. 200 Symbol Max Unit JC 0.875 C/W 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 175 200 TC, CASE TEMPERATURE (C) Figure 1. Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev. 10 1 Publication Order Number: 2N6338/D 2N6338 2N6341 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 150 - - Vdc - - 50 50 - - 10 1.0 Adc mAdc OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 50 mAdc, IB = 0) 2N6338 2N6341 Collector Cutoff Current (VCE = 50 Vdc, IB = 0) (VCE = 75 Vdc, IB = 0) 2N6338 2N6341 Adc ICEO Collector Cutoff Current (VCE = Rated VCEO, VEB(off) = 1.5 Vdc) (VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 150C) ICEX Collector Cutoff Current (VCB = Rated VCB, IE = 0) ICBO - 10 Adc Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0) IEBO - 100 Adc 50 30 12 - 120 - - - 1.0 1.8 - - 1.8 2.5 1.8 Vdc ON CHARACTERISTICS (1) DC Current Gain) (IC = 0.5 Adc, VCE = 2.0 Vdc) (IC = 10 Adc, VCE = 2.0 Vdc) (IC = 25 Adc, VCE = 2.0 Vdc) hFE - Collector Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) (IC = 25 Adc, IB = 2.5 Adc) VCE(sat) Vdc Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) (IC = 25 Adc, IB = 2.5 Adc) VBE(sat) Base-Emitter On Voltage (IC = 10 Adc, VCE = 2.0 Vdc) VBE(on) - Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (2) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz) fT 40 - MHz Cob - 300 pF Rise Time (VCC 80 Vdc, IC = 10Adc, IB1 = 1.0 Adc, VBE(off) = 6.0 Vdc) tr - 0.3 s Storage Time (VCC 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) ts - 1.0 s Fall Time (VCC 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) tf - 0.25 s Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) SWITCHING CHARACTERISTICS *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. (2) fT = |hfe| * ftest. 1000 700 VCC + 80 V 500 RC 8.0 OHMS RB 10 OHMS SCOPE t, TIME (ns) 10 s + 11 V 300 0 1N4933 - 9.0 V tr, tf 10 ns DUTY CYCLE = 1.0% td @ VBE(off) = 6.0 V VCC = 80 V IC/IB = 10 TJ = 25C 200 100 70 50 tr 30 - 5.0 V 20 10 0.3 NOTE: For information on Figures 3 and 6, RB and RC were varied to obtain desired test conditions. Figure 2. Switching Time Test Circuit 5.0 7.0 10 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) Figure 3. Turn-On Time http://onsemi.com 2 20 30 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N6338 2N6341 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 P(pk) 0.05 0.07 0.05 JC = r(t) JC JC = 0.875C/W MAX 0.02 t1 0.01 0.03 0.02 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 t2 DUTY CYCLE, D = t1/t2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 50 100 200 300 500 1000 Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) 100 50 200 s 20 10 1.0 ms dc 5.0 2.0 1.0 0.5 5.0 ms TJ = 200C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.2 0.1 0.05 0.02 0.01 2.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 200C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 3.0 5.0 7.0 10 20 30 2N6338 2N6341 50 70 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active Region Safe Operating Area 5.0 2.0 ts t, TIME (s) 1.0 3000 0.7 0.5 0.3 0.2 tf 0.1 0.07 0.05 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (AMP) 20 1000 700 500 300 200 100 70 50 0.1 30 TJ = 25C Cib 2000 C, CAPACITANCE (pF) 3.0 5000 VCC = 80 V IB1 = IB2 IC/IB = 10 TJ = 25C Figure 6. Turn-Off Time Cob 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 3 50 100 2N6338 2N6341 PACKAGE DIMENSIONS CASE 1-07 TO-204AA (TO-3) ISSUE Z A N C -T- E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y M DIM A B C D E G H K L N Q U V -Y- L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 -Q- 0.13 (0.005) M INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (Mon-Fri 2:30pm to 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (Mon-Fri 2:00pm to 7:00pm CET) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (Mon-Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com Toll-Free from Mexico: Dial 01-800-288-2872 for Access - then Dial 866-297-9322 ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 1-303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, UK, Ireland For additional information, please contact your local Sales Representative. http://onsemi.com 4 2N6338/D