High-Power NPN Silicon
Transistors
. . . designed for use in industrial–military power amplifier and
switching circuit applications.
•High Collector–Emitter Sustaining Voltage –
VCEO(sus) = 100 Vdc (Min) – 2N6338
= 150 Vdc (Min) – 2N6341
•High DC Current Gain –
hFE = 30 – 120 @ IC = 10 Adc
= 12 (Min) @ IC = 25 Adc
•Low Collector–Emitter Saturation Voltage –
VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
•Fast Switching Times @ IC = 10 Adc
tr = 0.3 ms (Max)
ts = 1.0 ms (Max)
tf = 0.25 ms (Max)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
2N6338
ÎÎÎÎÎ
ÎÎÎÎÎ
2N6341
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VCB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
120
ÎÎÎÎÎ
ÎÎÎÎÎ
180
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎ
ÎÎÎÎ
VCEO
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
100
ÎÎÎÎÎ
ÎÎÎÎÎ
150
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎ
VEB
ÎÎÎÎÎÎÎÎÎÎ
6.0
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Collector Current
Continuous
Peak
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
IC
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
25
50
ÎÎÎ
Î
Î
Î
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎÎ
ÎÎÎÎ
IB
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
10
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Total Device Dissipation
@ TC = 25C
Derate above 25C
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
PD
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
200
1.14
ÎÎÎ
Î
Î
Î
ÎÎÎ
Watts
W/°C
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
–65 to +200
ÎÎÎ
Î
Î
Î
ÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎ
θJC
ÎÎÎÎÎÎ
0.875
ÎÎÎ
C/W
*Indicates JEDEC Registered Data.
200
75
50
25
00 25 50 75 100 125 150 175 200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
175
150
125
100
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 10 1Publication Order Number:
2N6338/D
2N6338
2N6341
*ON Semiconductor Preferred Device
25 AMPERE
POWER TRANSISTORS
NPN SILICON
100, 120, 140, 150 VOLTS
200 WATTS
*
CASE 1–07
TO–204AA
(TO–3)
2N6338 2N6341
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (1) 2N6338
(IC = 50 mAdc, IB = 0) 2N6341
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎ
ÎÎÎ
100
150
ÎÎÎÎ
ÎÎÎÎ
–
–
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0) 2N6338
(VCE = 75 Vdc, IB = 0) 2N6341
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEO
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
–
–
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
50
50
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
µAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc)
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 150C)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEX
ÎÎÎ
Î
Î
Î
ÎÎÎ
–
–
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
10
1.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
µAdc
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current (VCB = Rated VCB, IE = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
ICBO
ÎÎÎ
ÎÎÎ
–
ÎÎÎÎ
ÎÎÎÎ
10
ÎÎÎ
ÎÎÎ
µAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎÎ
ÎÎÎ
–
ÎÎÎÎ
ÎÎÎÎ
100
ÎÎÎ
ÎÎÎ
µAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain)
(IC = 0.5 Adc, VCE = 2.0 Vdc)
(IC = 10 Adc, VCE = 2.0 Vdc)
(IC = 25 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
50
30
12
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
–
120
–
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
–
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Emitter Saturation Voltage
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 25 Adc, IB = 2.5 Adc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCE(sat)
ÎÎÎ
Î
Î
Î
ÎÎÎ
–
–
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
1.0
1.8
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter Saturation Voltage
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 25 Adc, IB = 2.5 Adc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VBE(sat)
ÎÎÎ
Î
Î
Î
ÎÎÎ
–
–
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
1.8
2.5
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage (IC = 10 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(on)
ÎÎÎ
ÎÎÎ
–
ÎÎÎÎ
ÎÎÎÎ
1.8
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current–Gain – Bandwidth Product (2) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
fT
ÎÎÎ
ÎÎÎ
40
ÎÎÎÎ
ÎÎÎÎ
–
ÎÎÎ
ÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
Cob
ÎÎÎ
ÎÎÎ
–
ÎÎÎÎ
ÎÎÎÎ
300
ÎÎÎ
ÎÎÎ
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rise Time (VCC ≈ 80 Vdc, IC = 10Adc, IB1 = 1.0 Adc, VBE(off) = 6.0 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
tr
ÎÎÎ
ÎÎÎ
–
ÎÎÎÎ
ÎÎÎÎ
0.3
ÎÎÎ
ÎÎÎ
µs
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Storage Time (VCC ≈ 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ts
ÎÎÎ
ÎÎÎ
–
ÎÎÎÎ
ÎÎÎÎ
1.0
ÎÎÎ
ÎÎÎ
µs
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Fall Time (VCC ≈ 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
ÎÎÎÎÎ
tf
ÎÎÎ
–
ÎÎÎÎ
0.25
ÎÎÎ
µs
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
(2) fT = |hfe| • ftest.
Figure 2. Switching Time Test Circuit
1000
0.3
Figure 3. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
t, TIME (ns)
500
100
70
50
10 0.5 0.7 2.0 3.0 7.0 30
+ 11 V
0
VCC
SCOPE
RB
10 OHMS
- 5.0 V
tr, tf 10 ns
DUTY CYCLE = 1.0%
RC
8.0 OHMS
20
30
5.0 20
10 µs
- 9.0 V
700
200
300
1.0 10
NOTE: For information on Figures 3 and 6, RB and RC were
varied to obtain desired test conditions.
+ 80 V
1N4933
td @ VBE(off) = 6.0 V
VCC = 80 V
IC/IB = 10
TJ = 25°C
tr
2N6338 2N6341
http://onsemi.com
3
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500
θJC = r(t) θJC
θJC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
0.3 3.0 30 300
100
2.0
Figure 5. Active Region Safe Operating Area
50
5.0
0.01 10 20 70 200
TJ = 200°C
2N6338
2N6341
0.1
10
0.5
IC
, COLLECTOR CURRENT (AMP)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
20
0.2
50 100
200 µs
5.0 ms
1.0 ms
dc
2.0
0.02
0.05
1.0
3.0 5.0 307.0
BONDING WIRE LIMITED
THERMALLY LIMITED @
TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN
LIMITED CURVES APPLY
BELOW RATED VCEO
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC–VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
200C. TJ(pk) may be calculated from the data in
Figure 4. A t high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
5.0
0.3
Figure 6. Turn–Off Time
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)µ
2.0
1.0
0.5
0.3
0.2
0.1
0.07
0.05 0.5 0.7 1.0 2.0 5.0 10 20 30
VCC = 80 V
IB1 = IB2
IC/IB = 10
TJ = 25°C
ts
3.0
0.7
3.0
tf
5000
0.1
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
50 0.5 1.0 2.0 5.0 20 50 10010
C, CAPACITANCE (pF)
700
500
200
100
TJ = 25°C
Cib
Cob
3000
2000
1000
70
300
0.2
2N6338 2N6341
http://onsemi.com
4
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.550 REF 39.37 REF
B--- 1.050 --- 26.67
C0.250 0.335 6.35 8.51
D0.038 0.043 0.97 1.09
E0.055 0.070 1.40 1.77
G0.430 BSC 10.92 BSC
H0.215 BSC 5.46 BSC
K0.440 0.480 11.18 12.19
L0.665 BSC 16.89 BSC
N--- 0.830 --- 21.08
Q0.151 0.165 3.84 4.19
U1.187 BSC 30.15 BSC
V0.131 0.188 3.33 4.77
A
N
E
C
K
–T– SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005) Y M
T
M
Y
M
0.13 (0.005) T
–Q–
–Y–
2
1
UL
GB
V
H
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
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