BAV99W - NXP - Datasheet.Global

1. Product profile

1.1 General description

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)

plastic packages.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

[1] When switched from IF= 10 mA to IR=10mA; R

L= 100 Ω; measured at IR=1mA.

BAV99 series

High-speed switching diodes

Rev. 8 — 18 November 2010 Product data sheet

Table 1. Product overview

Type number Package Configuration Package

configuration

NXP JEITA JEDEC

BAV99 SOT23 - TO-236AB dual series small

BAV99S SOT363 SC-88 - quadruple; 2 series very small

BAV99W SOT323 SC-70 - dual series very small

High switching speed: trr ≤4ns Low capacitance: Cd≤1.5 pF

Low leakage current Reverse voltage: VR≤100 V

Small SMD plastic packages AEC-Q101 qualified

High-speed switching Reverse polarity protection

General-purpose switching

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per diode

IRreverse current VR=80V - - 0.5 μA

VRreverse voltage - - 100 V

trr reverse recovery time [1] --4ns

Product data sheet Rev. 8 — 18 November 2010 2 of 14

NXP Semiconductors BAV99 series

High-speed switching diodes

2. Pinning information

3. Ordering information

4. Marking

[1] * = placeholder for manufacturing site code

Table 3. Pinning

Pin Description Simplified outline Graphic symbol

BAV99; BAV99W

1 anode (diode 1)

2 cathode (diode 2)

3 cathode (diode 1),

anode (diode 2)

BAV99S

1 anode (diode 1)

2 cathode (diode 2)

3 cathode (diode 3),

anode (diode 4)

4 anode (diode 3)

5 cathode (diode 4)

6 cathode (diode 1),

anode (diode 2)

006aaa14

006aaa76

132

006aab10

Table 4. Or dering information

Type number Package

Name Description Version

BAV99 - plastic surface-mounted package; 3 leads SOT23

BAV99S SC-88 plastic surface-mounted package; 6 leads SOT363

BAV99W SC-70 plastic surface-mounted package; 3 leads SOT323

Table 5. Marking codes

Type number Marking code[1]

BAV99 A7*

BAV99S K1*

BAV99W A7*

Product data sheet Rev. 8 — 18 November 2010 3 of 14

NXP Semiconductors BAV99 series

High-speed switching diodes

5. Limiting values

[1] Single diode loaded.

[2] Double diode loaded.

[3] Tj=25°C prior to surge.

[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[5] Soldering points at pins 2, 3, 5 and 6.

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

VRRM repetitive peak reverse

voltage -100V

VRreverse voltage - 100 V

IFforward current

BAV99 [1] -215mA

[2] -125mA

BAV99S [1] -200mA

BAV99W [1] -150mA

[2] -130mA

IFRM repetitive peak forward

current -500mA

IFSM non-repetitive peak

forward current square wave [3]

tp=1μs-4A

tp=1ms - 1 A

tp=1s - 0.5 A

Ptot total power dissipation [1][4]

BAV99 Tamb ≤25 °C-250mW

BAV99S Tsp ≤85 °C[5] -250mW

BAV99W Tamb ≤25 °C-200mW

Per device

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

Product data sheet Rev. 8 — 18 November 2010 4 of 14

NXP Semiconductors BAV99 series

High-speed switching diodes

6. Thermal characteristics

[1] Single diode loaded.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Soldering points at pins 2, 3, 5 and 6.

7. Characteristics

[1] When switched from IF= 10 mA to IR=10mA; R

L= 100 Ω; measured at IR=1mA.

[2] When switched from IF=10mA; t

r=20ns.

Table 7. Thermal characteris tics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1][2]

BAV99 - - 500 K/W

BAV99W - - 625 K/W

Rth(j-sp) thermal resistance from

junction to solder point

BAV99 - - 360 K/W

BAV99S [3] - - 260 K/W

BAV99W - - 300 K/W

Table 8. Characteristics

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

VFforward voltage IF= 1 mA - - 715 mV

IF= 10 mA - - 855 mV

IF=50mA --1V

IF=150mA --1.25V

IRreverse current VR=25V --30nA

VR=80V --0.5μA

VR=25V; T

j=150°C --30μA

VR=80V; T

j=150°C --50μA

Cddiode capacitance f = 1 MHz; VR=0V --1.5pF

trr reverse recovery time [1] --4ns

VFR forward recovery voltage [2] --1.75V

Product data sheet Rev. 8 — 18 November 2010 5 of 14

NXP Semiconductors BAV99 series

High-speed switching diodes

(1) Tamb = 150 °C

(2) Tamb =85°C

(3) Tamb =25°C

(4) Tamb =−40 °C

(1) Tamb = 150 °C

(2) Tamb =85°C

(3) Tamb =25°C

(4) Tamb =−40 °C

Fig 1. Forward current as a function of forward

voltage; typical values Fig 2. Reverse current as a function of reverse

voltage; typical values

f=1MHz; T

amb =25°C Based on square wave currents.

Tj=25°C; prior to surge

Fig 3. Diode capacitance as a function of reverse

voltage; typical values Fig 4. Non-repetitive peak for ward current as a

function of pulse duration; maximum val ues

006aab132

102

103

(mA)

10−1

VF (V)

0 1.41.00.4 0.80.2 1.20.6

(1) (2) (3) (4)

006aab133

102

(μA)

VR (V)

0 1008040 6020

10−1

10−2

10−3

10−4

10−5

(1)

(2)

(3)

(4)

0816124

0.8

0.6

0.4

0.2

mbg446

(V)

(pF)

mbg704

102

IFSM

(A)

10−1

tp (μs)

110

103

10 102

Product data sheet Rev. 8 — 18 November 2010 6 of 14

NXP Semiconductors BAV99 series

High-speed switching diodes

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in auto motive applications.

(1) IR=1mA

Input signal: reverse pulse rise time tr= 0.6 ns; reverse voltage pulse duration tp= 100 ns; duty cycle δ=0.05

Oscilloscope: rise time tr=0.35ns

Fig 5. Reverse recovery time test circuit and waveforms

Input signal: forward pulse rise time tr= 20 ns; forward current pulse duration tp≥100 ns; duty cycle δ≤0.005

Fig 6. Forward recovery voltage test circuit and waveforms

trr

(1)

+ I

output signal

10 %

90 %

input signal

V = V

= 50 ΩI

D.U.T.

= 50 Ω

SAMPLING

OSCILLOSCOPE

mga881

10 %

90 %

input signal

= 50 Ω

OSCILLOSCOPE

1 kΩ450 Ω

D.U.T.

mga88

VFR

output signal

Product data sheet Rev. 8 — 18 November 2010 7 of 14

NXP Semiconductors BAV99 series

High-speed switching diodes

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

[2] T1: normal taping

[3] T2: reverse taping

Fig 7. Package outline BAV99 (SOT23/TO-236AB) Fig 8. Package outline BAV99S (SOT363/SC-88)

Fig 9. Package outline BAV99W (SOT323/SC-70)

04-11-04Dimensions in mm

0.45

0.15

1.9

1.1

0.9

3.0

2.8

2.5

2.1

1.4

1.2

0.48

0.38

0.15

0.09

06-03-16Dimensions in mm

0.25

0.10

0.3

0.2

pin 1

index

1.3

0.65

2.2

2.0

1.35

1.15

2.2

1.8

1.1

0.8

0.45

0.15

132

465

04-11-04Dimensions in mm

0.45

0.15

1.1

0.8

2.2

1.8

2.2

2.0

1.35

1.15

1.3

0.4

0.3

0.25

0.10

Table 9. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packin g quantity

3000 10000

BAV99 SOT23 4 mm pitch, 8 mm tape and reel -215 -235

BAV99S SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135

4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165

BAV99W SOT323 4 mm pitch, 8 mm tape and reel -115 -135

Product data sheet Rev. 8 — 18 November 2010 8 of 14

NXP Semiconductors BAV99 series

High-speed switching diodes

11. Soldering

Fig 10. Reflow soldering footprint BAV99 (SOT23/TO-236AB)

Fig 11. Wave soldering footprint BAV99 (SOT23/TO-236AB)

solder lands

solder resist

occupied area

solder paste

sot023_

0.5

(3×)

0.6

(3×)

0.6

(3×)

0.7

(3×)

3.3

2.9

1.7

1.9

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_

2.8

4.5

1.4

4.6

1.4

(2×)

1.2

(2×)

2.2

2.6

Dimensions in mm

Product data sheet Rev. 8 — 18 November 2010 9 of 14

NXP Semiconductors BAV99 series

High-speed switching diodes

Fig 12. Reflow soldering footprint BAV99S (SOT363/SC-88)

Fig 13. Wave soldering footprint BAV99S (SOT363/SC-88)

solder lands

solder resist

occupied area

solder paste

sot363_

2.65

2.35 0.4 (2×)

0.6

(2×)

0.5

(4×)

0.5

(4×)

0.6

(4×)

0.6

(4×)

1.5

1.8

Dimensions in mm

sot363_

solder lands

solder resist

occupied area

preferred transport

direction during soldering

5.3

1.3 1.3

1.5

0.3

1.5

4.5

2.45

2.5

Dimensions in mm

Product data sheet Rev. 8 — 18 November 2010 10 of 14

NXP Semiconductors BAV99 series

High-speed switching diodes

Fig 14. Reflow soldering footprint BAV99W (SOT323/SC-70)

Fig 15. Wave soldering footprint BAV99W (SOT323/SC-70)

solder lands

solder resist

occupied area

solder paste

sot323_

2.65

2.35 0.6

(3×)

0.5

(3×)

0.55

(3×)

1.325

1.85

1.3

Dimensions in mm

sot323_f

3.65 2.1

1.425

(3×)

4.6

(2×)

2.575

1.8

solder lands

solder resist

occupied area

preferred transport

direction during soldering

Dimensions in mm

Product data sheet Rev. 8 — 18 November 2010 11 of 14

NXP Semiconductors BAV99 series

High-speed switching diodes

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet statu s Change notice Supersedes

BAV99_SER_8 20101118 Product data sheet - BAV99_SER_7

Modifications: •Section 4 “Marking”: marking placeholder explanation in table footer updated

•Section 5 “Limiting values”: Ptot condition for BAV99S corrected

•Section 13 “Legal information”: updated

BAV99_SER_7 20100414 Product data sheet - BAV99_SER_6

BAV99_SER_6 20100310 Product data sheet - BAV99_SER_5

BAV99_SER_5 20080820 Product data sheet - BAV99_4

BAV99S_3

BAV99W_4

BAV99_4 2001101 5 Product specification - BAV99_3

BAV99S _3 20010514 Product specification - BAV99S_N_2

BAV99W_4 19990511 Product specification - BAV99W_3

Product data sheet Rev. 8 — 18 November 2010 12 of 14

NXP Semiconductors BAV99 series

High-speed switching diodes

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the short data sheet, th e

full data sheet shall pre va il.

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data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

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Product data sheet.

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Notwithstanding any damages that customer might incur for any reason

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changes to information published in this document, including without

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Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

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products are sold subject to the general terms and conditions of commercial

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product develop ment.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 8 — 18 November 2010 13 of 14

NXP Semiconductors BAV99 series

High-speed switching diodes

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to : salesaddresses@nxp.com

NXP Semiconductors BAV99 series

High-speed switching diodes

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 18 Nove mber 2010

Document identifier: BAV99_S ER

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 6

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

10 Packing information . . . . . . . . . . . . . . . . . . . . . 7

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

14 Contact information. . . . . . . . . . . . . . . . . . . . . 13

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14