VS-82CNQ030APbF Series www.vishay.com Vishay Semiconductors Schottky High Performance Rectifier Gen 3, D-61 Package, 2 x 40 A FEATURES VS-82CNQ030APbF * 150 C TJ operation Base common cathode Available * Dual center tap module * Very low forward voltage drop 1 D-61-8 Anode 1 2 Common cathode 3 Anode 2 VS-82CNQ030ASMPbF * High frequency operation * High power discrete * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance * Guard ring for enhanced ruggedness and long term reliability 1 Anode 1 2 Common cathode 3 Anode 2 D-61-8-SM * New fully transfer-mould low profile, small footprint, high current package * Through-hole versions are currently available for use in lead (Pb)-free applications ("PbF" suffix) * Designed and qualified for industrial level VS-82CNQ030ASLPbF * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Base common cathode 1 D-61-8-SL Available 3 Anode 2 Anode 1 Note * This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details. DESCRIPTION The center tap Schottky rectifier module series has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. PRODUCT SUMMARY Package D-61 IF(AV) 2 x 40 A VR 30 V VF at IF 0.47 IRM max. 280 mA at 125 C TJ max. 150 C Diode variation Common cathode EAS 36 mJ MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Rectangular waveform VRRM VALUES UNITS 80 A 30 V IFSM tp = 5 s sine 5100 A VF 40 Apk, TJ = 125 C (per leg) 0.37 V TJ Range -55 to +150 C VS-82CNQ030APbF UNITS 30 V VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM Revision: 05-Aug-14 Document Number: 94258 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-82CNQ030APbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current See fig. 5 IF(AV) 50 % duty cycle at TC = 119 C, rectangular waveform 80 Maximum peak one cycle non-repetitive surge current per leg See fig. 7 IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 C, IAS = 8 A, L = 1.12 mH 36 mJ IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 8 A TEST CONDITIONS VALUES UNITS Repetitive avalanche current per leg 5 s sine or 3 s rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 5100 UNITS A 880 ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 40 A Maximum forward voltage drop per leg See fig. 1 VFM (1) TJ = 25 C 80 A 40 A TJ = 125 C 80 A Maximum reverse leakage current per leg See fig. 2 Maximum junction capacitance per leg IRM (1) CT Typical series inductance per leg LS Maximum voltage rate of change dV/dt TJ = 25 C VR = Rated VR TJ = 125 C VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 C Measured lead to lead 5 mm from package body Rated VR 0.47 0.55 0.37 V 0.47 5 280 3700 mA pF 5.5 nH 10 000 V/s VALUES UNITS -55 to +150 C Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Maximum thermal resistance, junction to case TEST CONDITIONS TJ, TStg per leg per package Typical thermal resistance, case to heatsink RthJC RthCS DC operation (see fig. 4) 0.85 DC operation 0.42 Mounting surface, smooth and greased Device flatness < 5 mils 0.30 7.8 Approximate weight Mounting torque minimum maximum Marking device g 0.28 oz. 40 (35) kgf * cm (lbf * in) 58 (50) Case style D-61 C/W 82CNQ030A Case style D-61-8-SM 82CNQ030ASM Case style D-61-8-SL 82CNQ030ASL Revision: 05-Aug-14 Document Number: 94258 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-82CNQ030APbF Series www.vishay.com Vishay Semiconductors 1000 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) TJ = 150 C 100 TJ = 150 C TJ = 125 C TJ = 25 C 10 1 100 TJ = 125 C 10 TJ = 100 C 1 TJ = 75 C TJ = 50 C 0.1 TJ = 25 C 0.01 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.8 5 10 15 20 25 30 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 10 000 TJ = 25 C 1000 0 5 10 15 20 25 35 30 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 1 PDM t1 0.1 t2 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 0.01 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 05-Aug-14 Document Number: 94258 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-82CNQ030APbF Series Vishay Semiconductors 25 150 D = 0.08 D = 0.17 D = 0.25 D = 0.33 D = 0.50 RthJC (DC) = 0.85 C/W Average Power Loss (W) Allowable Case Temperature (C) www.vishay.com 145 140 DC 135 130 20 15 RMS limit 10 DC 5 0 125 0 10 20 30 40 50 0 60 10 20 30 40 50 60 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 10 000 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L D.U.T. IRFP460 Rg = 25 Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 05-Aug-14 Document Number: 94258 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-82CNQ030APbF Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 82 C N Q 030 A PbF 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (80 A) 3 - Circuit configuration: C = common cathode 4 - Package: N = D-61 5 - Schottky "Q" series 6 - Voltage ratings (030 = 30 V) 7 - Package style: A = D-61-8 ASM = D-61-8-SM ASL = D-61-8-SL 8 - None = standard production PbF = lead (Pb)-free Standard pack quantity: A = 10 pieces; ASM/ASL = 20 pieces LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95354 Part marking information www.vishay.com/doc?95356 Revision: 05-Aug-14 Document Number: 94258 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D-61-8, D-61-8-SM, D-61-8-SL DIMENSIONS - D-61-8 in millimeters (inches) O 4.17 (0.164) O 3.91 (0.154) (2 x) 30.15 (1.187) 29.90 (1.177) 8.89 (0.350) 8.73 (0.344) 1 2 3 11.05 (0.435) REF. 0.89 (0.035) 0.73 (0.029) 1.98 (0.078) 1.72 (0.068) 5.20 (0.205) 4.95 (0.195) 10.28 (0.405) 10.03 (0.395) 16.2 (0.640) REF. 14 MIN. 1.04 (0.041) 0.84 (0.033) 14 MIN. 5.97 (0.235) 5.71 (0.225) (2 x) R 0.0200 37.97 (1.495) 37.72 (1.485) 5 (2 x) 5 (2 x) 3.30 (0.130) 3.04 (0.120) 10.79 (0.425) MAX. 1.40 (0.055) 1.14 (0.045) Revision: 28-Sep-11 Document Number: 95354 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS - D-61-8-SM in millimeters (inches) 19.93 (0.785) 19.68 (0.775) 8.89 (0.350) 8.73 (0.344) 11.05 (0.435) REF. 0.89 (0.035) 0.73 (0.029) 1.98 (0.078) 1.72 (0.068) 5.20 (0.205) 4.95 (0.195) 10.28 (0.405) 10.03 (0.395) 14 MIN. 1.04 (0.041) 0.84 (0.033) 14 MIN. 5.97 (0.235) 5.71 (0.225) 3.30 (0.130) 3.04 (0.120) 10.79 (0.425) MAX. 1.40 (0.055) 1.14 (0.045) Revision: 28-Sep-11 Document Number: 95354 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS - D-61-8-SL in millimeters (inches) 14 MIN. 14 MIN. 19.93 (0.785) 19.68 (0.775) 0.89 (0.035) 0.73 (0.029) 8.89 (0.350) 8.73 (0.344) 2.67 (0.105) 2.16 (0.085) 5.59 (0.220) 5.08 (0.200) R 0.51 (0.020) 5 R 0.76 (0.030) 1.98 (0.078) 1.72 (0.068) 1.04 (0.041) 0.84 (0.033) Detail "A" 3.30 (0.130) 3.05 (0.120) 5.20 (0.205) 4.95 (0.195) 5.33 (0.210) R0 0.508 (R 0.02) 5.97 (0.235) 5.71 (0.225) 3.97 (0.156) 3.68 (0.145) 2.41 (0.095) 2.16 (0.085) 3.30 (0.130) 3.05 (0.120) 10.79 (0.425) MAX. 0.89 (0.035) 0.73 (0.029) 1.40 (0.055) 1.14 (0.045) 19.93 (0.785) 19.68 (0.775) 16.13 (0.635) 15.88 (0.625) 14.22 (0.560) 13.71 (0.540) 8.89 (0.350) 8.73 (0.344) 0.89 (0.035) (2 x) 0.73 (0.029) 0.64 (0.025) REF. (2 x) 3.97 (0.156) 3.68 (0.145) 5.59 (0.220) 5.08 (0.200) 1.98 (0.078) (2 x) 1.72 (0.068) 10.16 (0.400) REF. Revision: 28-Sep-11 Document Number: 95354 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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