1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 31
General Purpose Transistors 2N3903, 2N3904
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 1 V, IC = 0.1 mA 2N3903
2N3904 hFE
hFE
20
40 –
––
–
VCE = 1 V, IC = 1 mA 2N3903
2N3904 hFE
hFE
35
70 –
––
–
VCE = 1 V, IC = 10 mA 2N3903
2N3904 hFE
hFE
50
100 –
–150
300
VCE = 1 V, IC = 50 mA 2N3903
2N3904 hFE
hFE
30
60 –
––
–
VCE = 1 V, IC = 510 mA 2N3903
2N3904 hFE
hFE
15
30 –
––
–
Gain-Bandwidth Product – Transitfrequenz
VCE = 20 V, IC = 10 mA,
f = 100 MHz 2N3903
2N3904 fT
fT
250 MHz
300 MHz –
––
–
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 5 V, IE = ie = 0, f = 100 kHz CCB0 – – 4 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 100 kHz CEB0 – – 8 pF
Noise figure – Rauschzahl
VCE = 5 V, IC = 100 :A
RG = 1 kS f = 10 Hz ...15.7 kHz 2N3903
2N3904 F
F–
––
–6 dB
5 dB
Switching times – Schaltzeiten
turn-on time ICon = 10 mA,
IBon = - IBoff = 1 mA ton ––70
turn-off time toff – – 250
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 200 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren 2N3905, 2N3906