BSM 100 GB 120 DN2 IGBT Power Module * Half-bridge * Including fast free-wheeling diodes * Package with insulated metal base plate Type VCE BSM 100 GB 120 DN2 1200V 150A IC Package Ordering Code HALF-BRIDGE 2 C67076-A2107-A70 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 k Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC 20 A TC = 25 C 150 TC = 80 C 100 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 300 TC = 80 C 200 Power dissipation per IGBT W Ptot TC = 25 C 800 Chip temperature Tj Storage temperature Tstg Thermal resistance, chip case RthJC 0.16 Diode thermal resistance, chip case RthJCD 0.3 Insulation test voltage, t = 1min. Vis 2500 Vac Creepage distance - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 1 + 150 C -40 ... + 125 K/W sec 40 / 125 / 56 Oct-21-1997 BSM 100 GB 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage V VGE(th) VGE = VCE, IC = 4 mA 4.5 5.5 6.5 VGE = 15 V, IC = 100 A, Tj = 25 C - 2.5 3 VGE = 15 V, IC = 100 A, Tj = 125 C - 3.1 3.7 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) mA ICES VCE = 1200 V, VGE = 0 V, Tj = 25 C - 1.5 2 VCE = 1200 V, VGE = 0 V, Tj = 125 C - 6 - Gate-emitter leakage current nA IGES VGE = 20 V, VCE = 0 V - - 200 AC Characteristics Transconductance VCE = 20 V, IC = 100 A Input capacitance 54 nF - 6.5 - - 1 - - 0.5 - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S gfs Crss VCE = 25 V, VGE = 0 V, f = 1 MHz 2 Oct-21-1997 BSM 100 GB 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 100 A RGon = 6.8 Rise time - 130 260 - 80 160 - 400 600 - 70 100 tr VCC = 600 V, VGE = 15 V, IC = 100 A RGon = 6.8 Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 100 A RGoff = 6.8 Fall time tf VCC = 600 V, VGE = -15 V, IC = 100 A RGoff = 6.8 Free-Wheel Diode Diode forward voltage V VF IF = 100 A, VGE = 0 V, Tj = 25 C - 2.3 2.8 IF = 100 A, VGE = 0 V, Tj = 125 C - 1.8 - Reverse recovery time s trr IF = 100 A, VR = -600 V, VGE = 0 V diF/dt = -1000 A/s, Tj = 25 C Reverse recovery charge - 0.3 C Qrr IF = 100 A, VR = -600 V, VGE = 0 V diF/dt = -1000 A/s Tj = 25 C - 4 - Tj = 125 C - 12 - 3 Oct-21-1997 BSM 100 GB 120 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 C Ptot Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 900 10 3 W A IC 700 t = 14.0s p 10 2 100 s 600 500 10 1 1 ms 400 10 ms 300 10 0 200 DC 100 0 0 20 40 60 80 100 120 C 10 -1 0 10 160 10 1 10 2 10 3 TC Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T IGBT 10 0 160 K/W A IC V VCE ZthJC 120 10 -1 100 10 -2 80 D = 0.50 0.20 60 0.10 0.05 10 -3 40 0.02 single pulse 0.01 20 0 0 20 40 60 80 100 120 C 160 TC 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Oct-21-1997 BSM 100 GB 120 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 125 C 200 200 A IC 160 140 A 17V 15V 13V 11V 9V 7V IC 160 140 120 120 100 100 80 80 60 60 40 40 20 20 0 17V 15V 13V 11V 9V 7V 0 0 1 2 3 V 5 0 VCE 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 200 A IC 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 V 14 VGE 5 Oct-21-1997 BSM 100 GB 120 DN2 Typ. capacitances Typ. gate charge VGE = (QGate) parameter: IC puls = 100 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 2 20 V nF VGE 16 C 600 V 14 800 V 10 1 Ciss 12 10 8 10 0 Coss 6 Crss 4 2 0 0 100 200 300 400 500 nC 10 -1 0 650 5 10 15 20 25 30 V VCE QGate 40 Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 25 nH 2.5 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 200 400 600 800 1000 1200 V 1600 VCE 6 0 0 200 400 600 800 1000 1200 V 1600 VCE Oct-21-1997 BSM 100 GB 120 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C t = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 6.8 par.: VCE = 600 V, VGE = 15 V, IC = 100 A 10 3 10 4 ns t tdoff t ns 10 3 tdoff tdon tr 10 2 tdon tr tf 10 2 tf 10 1 0 50 100 150 A 10 1 0 250 10 20 30 40 IC 60 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C E = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 6.8 par.: VCE = 600V, VGE = 15 V, IC = 100 A 60 40 mWs Eon Eon mWs 50 E E 45 30 40 25 35 30 20 25 Eoff 15 20 Eoff 15 10 10 5 5 0 0 50 100 150 A 250 IC 7 0 0 10 20 30 40 60 RG Oct-21-1997 BSM 100 GB 120 DN2 Forward characteristics of fast recovery Transient thermal impedance Zth JC = (tp) parameter: D = tp / T reverse diode IF = f(VF) parameter: Tj 10 0 200 A IF Diode K/W 160 ZthJC 10 -1 140 120 Tj=125C Tj=25C 10 -2 100 D = 0.50 0.20 80 0.10 60 10 -3 0.05 single pulse 0.02 40 0.01 20 0 0.0 0.5 1.0 1.5 2.0 V 3.0 VF 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Oct-21-1997 BSM 100 GB 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g 9 Oct-21-1997 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM100GB120DN2 Anhang C-Serie Appendix C-series Gehause spezifische Werte Housing specific values Modulinduktivitat stray inductance module typ. LsCE 20 nH Gehausemae C-Serie Package outline C-series Appendix C-series Appendix_C-Serie_BSM100GB120DN2.xls 2001-09-20 Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschlielich fur technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes fur die von Ihnen anvisierte Anwendungsowie die Beurteilung der Vollstandigkeitder bereitgestellten Produktdaten fur diese Anwendungobliegt Ihnen bzw. Ihren technischen Abteilungen. In diesem Produktdatenblatt werden diejenigen Merkmale besch rieben, fur die wir eine liefervertragliche Gewahrleistung ubernehmen. Eine solche Gewahrleistung richtet sich ausschliel ich nach Magabe der im jeweiligen Liefervertrag enthaltenen Bestimmungen. Garantien jeglicher Art werden fur dasProdukt und dessen Eigenschaften keinesfalls ubernommen. 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