SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 - MARCH 2001
PARTMARKING DETAILS –
BCW66F – EF BCW66FR – 7P
BCW66G – EG BCW66GR – 5T
BCW66H – EH BCW66HR – 7M
COMPLEMENTARY TYPE – BCW68
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5V
Continuous Collector Current IC800 mA
Peak Collector Current(10ms) ICM 1000 mA
Base Current IB100 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
BCW66
C
B
E
SOT23
TBA
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage V(BR)CEO 45 V ICEO
=10mA
V(BR)CES 75 V IC=10µA
Emitter-Base Breakdown Voltage V(BR)EBO 5V
IEBO
=10µA
Collector-Emitter
Cut-off Current ICES 20
20 nA
µAVCES
= 45V
VCES
= 45V , Tamb
=150°C
Emitter-Base Cut-Off Current IEBO 20 nA VEBO
=4V
Collector-Emitter Saturation
Voltage VCE(sat) 0.3
0.7 V
VIC=100mA, IB = 10mA
IC= 500mA, IB = 50mA*
Base-Emitter Saturation Voltage VBE(sat) 2VI
C=500mA, IB=50mA*
Static
Forward
Current
Transfer
BCW66F hFE 75
100
35 160 250
IC= 10mA, VCE
= 1V
IC=100mA, VCE= 1V*
IC=500mA, VCE = 2V*
BCW66G hFE 110
160
60 250 400 IC= 10mA, VCE
= 1V
IC=100mA, VCE = 1V*
IC=500mA, VCE = 2V*
BCW66H hFE 180
250
100 350 630 IC= 10mA, VCE
= 1V
IC=100mA, VCE = 1V*
IC=500mA, VCE = 2V*
Transition Frequency fT100 MHz IC =20mA, VCE =10V
f = 100MHz
Output Capacitance Cobo 8 12pFV
CB
=10V, f =1MHz
Input Capacitance Cibo 80 pF VEB =0.5V, f =1MHz
Noise Figure N 2 10 dB IC= 0.2mA, VCE = 5V
RG =1kΩ
Switching times:
Turn-On Time
Turn-Off Time ton
toff
100
400 ns
ns IC=150mA
IB1=- IB2 =15mA
RL=150Ω
Spice parameter data is available upon request for this device
*Measured under pulsed conditions.
BCW66
TBA
