2N7002KW
115mA , 60V, RDS(ON) 4
N-Ch Small Signal MOSFET with ESD Protection
Elektronische Bauelemente
31-Mar-2011 Rev. A Page 1 of 4
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
SO
T
-323
Top View
A
L
C B
D
GH J
F
K E
1
2
3
12
3
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
RDS(ON), VGS@10V, IDS@500mA=3
RDS(ON), VGS@4.5V, IDS@200mA=4
Advanced Trench Process Technology
High Density Cell Design For Ultra Low On-Resistance
Very Low Leakage Current In Off Condition
Specially Designed for Battery Operated Systems,
Solid-State Relays Drivers：Relays, Displays, Lamps,
Solenoids, Memories, etc.
ESD Protected 2KV HBM
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: SOT-323 Package
Terminals: Solderable per MIL-STD-750,
Method 2026
MARKING
K72
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-323 3K 7’ inch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 115 mA
Pulsed Drain Current 1 IDM 800 mA
Maximum Power Dissipation TA=25°C PD 200 mW
TA=75°C 120
Thermal Resistance Junction-Ambient (PCB mounted) 2 R
JA 625 °C / W
Operating Junction and Storage Temperature TJ, TSTG -55~150 °C
Notes:
1. Maximum DC current limited by the package.
2. Surface mounted on FR4 board, t < 5sec.
Gate
Source
Drain
REF. Millimete
r
REF. Millimete
r
Min. Max. Min. Max.
A 1.80 2.20 G 0.100 REF.
B 1.80 2.45 H 0.525 REF.
C 1.15 1.35 J 0.08 0.25
D 0.80 1.10 K - -
E 1.20 1.40 L 0.650 TYP.
F 0.20 0.40
2N7002KW
115mA , 60V, RDS(ON) 4
N-Ch Small Signal MOSFET with ESD Protection
Elektronische Bauelemente
31-Mar-2011 Rev. A Page 2 of 4
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
N-CHANNEL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter Symbol Min. Typ.2Max. Unit Test Conditions
Static
Drain-Source Breakdown Voltage BVDSS 60 - - V VGS=0, ID=10μA
Gate-Threshold Voltage VGS(th) 1 - 2.5 VDS= VGS, ID=250μA
Drain-Source On-Resistance RDS(ON)
- - 4
Ω VGS=4.5V, ID=200mA
- - 3 VGS=10V, ID=500mA
Zero Gate Voltage Drain Current IDSS - - 1 μA VDS=60V, VGS=0
Gate-Body Leakage Current IGSS - - ±10 μA VDS=0, VGS= ±20V
Forward Transconductance gfs 100 - - mS VDS=15V, ID=250mA
Dynamic
Total Gate Charge Qg - - 0.8 nC
VDS=15V, VGS=4.5V, ID=200mA
Turn-On Time t(on) - - 20
nS
VDD=30V, RL=150Ω,
ID=200mA, VGEN=10V,
RG=10Ω
Turn-Off Time t(off - - 40
Input Capacitance Ciss - - 35
pF VDS=25V, VGS=0V, f=1MHz
Output Capacitance Coss - - 10
Reverse Transfer Capacitance Crss - - 5
Source-Drain Diode
Diode Forward Voltage VSD - 0.82 1.3 V IS=200mA, VGS=0V
Continuous Diode Forward Current IS - - 115 mA
Pulse Diode Forward Current ISM - - 800 mA
2N7002KW
115mA , 60V, RDS(ON) 4
N-Ch Small Signal MOSFET with ESD Protection
Elektronische Bauelemente
31-Mar-2011 Rev. A Page 3 of 4
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
CHARACTERISTIC CURVE
FIG.1‐OuputCharacteristicFIG.2‐TransferCharacteristic
FIG.3‐OnResistancevsDrainCurrent
FIG.5‐OnResistancevsJunctionTem p erature
FIG.4‐OnResistancevsGatetoSourceVoltage
2N7002KW
115mA , 60V, RDS(ON) 4
N-Ch Small Signal MOSFET with ESD Protection
Elektronische Bauelemente
31-Mar-2011 Rev. A Page 4 of 4
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
CHARACTERISTIC CURVE
FIG.6‐GateChargeWaveform
FIG.10‐Source‐DrainDiodeForwardVoltage
FIG.9‐BreakdownVoltagevsJunctionTemperatureFIG.8‐ThresholdVoltagevsTemperature
FIG.7‐GateCharge
