Feb-27-2004
1
BG3123...
VPS05604
6
3
1
54
2
DUAL N-Channel MOSFET Tetrode
• Two gain controlled input stages for UHF
and VHF -tuners e.g. (NTSC, PAL)
• Optimized for UHF (amp. B) and VHF (amp. A)
• Integrated gate protection diodes
• High AGC-range, low noise figure, high gain
• Improved cross modulation at gain reduction
BG3123 BG3123R
EHA07461
GND
G1
G2
Drain
AGC
HF
Input
HF Output
+DC
GG
V
G1
R
A
B
4
56
1 2 3
A
B
4
56
1 2 3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Package Pin Configuration Marking
BG3123
BG3123R***
SOT363
SOT363
1=G1*
1=G1**
2=G2
2=S
3=D*
3=D**
4=D**
4=D*
5=S
5=G2
6=G1**
6=G1*
KOs
KRs
* For amp. A; ** for amp. B
*** Target Data
180° rotated tape loading orientation available
Maximum Ratings
Parameter Symbol Value Unit
Drain-source voltage VDS 8 V
Continuous drain current
amp. A
amp. B
ID
25
20
mA
Gate 1/ gate 2-source current ±IG1/2SM 1
Gate 1/ gate 2-source voltage ±VG1/G2S 6 V
Total power dissipation Ptot 200 mW
Storage temperature Tstg -55 ... 150 °C
Channel temperature Tch 150
Feb-27-2004
2
BG3123...
Thermal Resistance
Parameter Symbol Value Unit
Channel - soldering point1) Rthchs ≤ 150 K/W
Electrical Characteristics
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Drain-source breakdown voltage
ID = 10 µA, VG1S = 0 V, VG2S = 0 V
V(BR)DS 12 - - V
Gate1-source breakdown voltage
+IG1S = 10 mA, VG2S = 0 V, VDS = 0 V
+V(BR)G1SS 6 - 15
Gate2-source breakdown voltage
+IG2S = 10 mA, VG1S = 0 V, VDS = 0 V
+V(BR)G2SS 6 - 15
Gate1-source leakage current
VG1S = 6 V, VG2S = 0 V
+IG1SS - - 50 µA
Gate2-source leakage current
VG2S = 8 V, VG1S = 0 V, VDS = 0 V
+IG2SS - - 50 nA
Drain current
VDS = 5 V, VG1S = 0 V, VG2S = 4.5 V
IDSS - - 10 µA
Drain-source current
VDS = 5 V, VG2S = 4 V, RG1 = 60 kΩ,
amp. A
VDS = 5 V, VG2S = 4 V, RG1 = 50 kΩ,
amp. B
IDSX
-
-
14
14
-
-
mA
Gate1-source pinch-off voltage
VDS = 5 V, VG2S = 4 V, ID = 20 µA
VG1S(p) - 0.7 - V
Gate2-source pinch-off voltage
VDS = 5 V, ID = 20 µA
VG2S(p) - 0.6 -
1For calculation of RthJA please refer to Application Note Thermal Resistance
Feb-27-2004
3
BG3123...
Electrical Characteristics
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics VDS = 5V, VG2S = 4V, (ID = 14 mA) (verified by random sampling)
Forward transconductance
amp. A
amp. B
gfs
-
-
30
25
-
-
mS
Gate1 input capacitance
f = 10 MHz, amp. A
f = 10 MHz, amp. B
Cg1ss
-
-
1.9
1.5
-
-
pF
Output capacitance
f = 10 MHz, amp. A
f = 10 MHz, amp. B
Cdss
-
-
1.3
1.1
-
-
Power gain
f = 800 MHz, amp. A
f = 800 MHz, amp. B
f = 45 MHz, amp. A
f = 45 MHz, amp. B
Gp
-
-
-
-
25
24
32
30
-
-
-
-
dB
Noise figure
f = 800 MHz, amp. A
f = 800 MHz, amp. B
f = 45 MHz, amp. A
f = 45 MHz, amp. B
F
-
-
-
-
1.8
1.8
1.4
1.6
-
-
-
-
dB
Gain control range
VG2S = 4 ... 0 V , f = 800 MHz
∆Gp45 - -
Cross-modulation k=1%, fw=50MHz, funw=60MHz
amp.A , AGC = 0 dB
amp. B, AGC = 0 dB
amp. A , AGC = 10 dB
amp. B , AGC = 10 dB
amp. A, AGC = 40 dB
amp. B, AGC = 40 dB
Xmod
90
90
-
-
98
98
96
97
91
94
103
104
-
-
-
-
-
-
-
Feb-27-2004
4
BG3123...
Total power dissipation Ptot = ƒ(TS)
amp. A
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
mW
300
Ptot
Total power dissipation Ptot = ƒ(TS)
amp. B
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
mW
300
Ptot
Drain current ID = ƒ(IG1)
VG2S = 4V
amp. A
0 10 20 30 40 50 µA 70
IG1
0
2
4
6
8
10
12
mA
16
ID
Drain current ID = ƒ(IG1)
VG2S = 4V
amp. B
0 10 20 30 40 50 µA 70
IG1
0
2
4
6
8
10
12
mA
16
ID
Feb-27-2004
5
BG3123...
Output characteristics ID = ƒ(VDS)
VG2S = 4V, VG1S = Parameter in V
amp. A
0 2 4 6 8 10 V14
VDS
0
2
4
6
8
10
12
14
mA
18
ID
1.5
1.3
1.4
1.2
Output characteristics ID = ƒ(VDS)
VG2S = 4V, VG1S = Parameter in V
amp. B
0 2 4 6 8 10 V14
VDS
0
2
4
6
8
10
12
14
mA
18
ID
1.0
1.3
1.5
1.6
1.7
Gate 1 current IG1 = ƒ(VG1S)
VDS = 5V, VG2S = Parameter in V
amp. A
0 0.4 0.8 1.2 V2
VG1S
0
20
40
60
80
µA
120
IG1
4
3.5
3
2.5
2
Gate 1 current IG1 = ƒ(VG1S)
VDS = 5V, VG2S = Parameter in V
amp. B
0 0.4 0.8 1.2 V2
VG1S
0
20
40
60
80
µA
120
IG1
4
3
2.5
2
Feb-27-2004
6
BG3123...
Gate 1 forward transconductance
gfs = ƒ(ID), VDS = 5V, VG2S = Parameter
amp. A
0 4 8 12 mA 20
ID
0
4
8
12
16
20
24
mS
32
gfs
4V
3V
2.5V
2V
Gate 1 forward transconductance
gfs = ƒ(ID), VDS = 5V, VG2S = Parameter
amp. B
0 4 8 mA 16
ID
0
5
10
15
mS
25
gfs
4V
3V
2.5V
2V
Drain current ID = ƒ(VG1S)
VDS = 5V, VG2S = Parameter
amp. A
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V2
VG1S
0
4
8
12
16
20
mA
28
ID
4V
3V
2V
1.5V
Drain current ID = ƒ(VG1S)
VDS = 5V, VG2S = Parameter
amp. B
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V2
VG1S
0
2
4
6
8
10
12
mA
16
ID
1.5V
2V
4V
3V
Feb-27-2004
7
BG3123...
Drain current ID = ƒ(VGG) amp. A
VDS = 5V, VG2S = 4V, RG1 = 60kΩ
(connected to VGG, VGG=gate1 supply voltage)
012345V7
VGG
0
2
4
6
8
10
12
14
mA
18
ID
Drain current ID = ƒ(VGG) amp. B
VDS = 5V, VG2S = 4V, RG1 = 50kΩ
(connected to VGG, VGG=gate1 supply voltage)
012345V7
VGG
0
2
4
6
8
10
12
14
mA
18
ID
Drain current ID = ƒ(VGG)
VG2S = 4V, RG1 = Parameter in kΩ
amp. A
012345V7
VGG=VDS
0
2
4
6
8
10
12
14
mA
18
ID
100
80
60
50
Drain current ID = ƒ(VGG)
VG2S = 4V, RG1 = Parameter in kΩ
amp. B
012345V7
VGG=VDS
0
2
4
6
8
10
12
14
mA
18
ID
70
50
60
40
Feb-27-2004
8
BG3123...
Crossmodulation Vunw = (AGC)
VDS = 5 V, Rg1 = 68 kΩ
amp.A
0 10 20 30 dB 50
AGC
80
90
100
dBµV
120
Vunw
Crossmodulation Vunw = (AGC)
VDS = 5 V, Rg1 = 56 kΩ
amp.B
0 10 20 30 dB 50
AGC
80
90
100
dBµV
120
Vunw
Cossmodulation test circuit
4n7
4n7
VGG
VAGC VDS
4n7
2.2 µH
R1
10 kOhm
RL
50 Ohm
RGEN
50 Ohm 50 Ohm RG1
4n7
