Feb.1999
FS30KMH-03 OUTLINE DRAWING Dimensions in mm
TO-220FN
MITSUBISHI Nch POWER MOSFET
FS30KMH-03
HIGH-SPEED SWITCHING USE
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC conver ter, etc.
V
V
A
A
A
A
A
W
°C
°C
V
g
30
±10
30
120
30
30
120
20
–55 ~ +150
–55 ~ +150
2000
2.0
VGS = 0V
VDS = 0V
L = 30µH
AC for 1minute, Terminal to case
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Viso—
Symbol
MAXIMUM RATINGS (Tc = 25°C)
Parameter Conditions Ratings Unit
15 ± 0.314 ± 0.5
10 ± 0.3 2.8 ± 0.2
f 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
4.5 ± 0.2
0.75 ± 0.15
3 ± 0.33.6 ± 0.3
6.5 ± 0.3
123
q GATE
w DRAIN
e SOURCE
E
w
q
e
¡2.5V DRIVE
¡VDSS .................................................................................. 30V
¡rDS (ON) (MAX) ..............................................................46mΩ
¡ID ......................................................................................... 30A
¡Viso ................................................................................ 2000V
¡Integrated Fast Recovery Diode (TYP.) ............. 45ns
Feb.1999
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
MITSUBISHI Nch POWER MOSFET
FS30KMH-03
HIGH-SPEED SWITCHING USE
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
30
—
—
0.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.9
34
43
0.51
23
1150
260
120
19
95
90
100
1.0
—
45
—
±0.1
0.1
1.2
46
69
0.69
—
—
—
—
—
—
—
—
1.5
6.25
—
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol UnitParameter Test conditions Limits
Min. Typ. Max.
ID = 1mA, VGS = 0V
VGS = ±10V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 15A, VGS = 4V
ID = 15A, VGS = 2.5V
ID = 15A, VGS = 4V
ID = 15A, VDS = 5V
VDS = 10V, VGS = 0V, f = 1MH4
Channel to case
IS = 15A, dis/dt = –50A/µs
0
8
16
24
32
40
0 20050 100 150
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
210
0
357 2 10
1
357 2 10
2
357
2
2
tw = 10ms
T
C
= 25°C
Single Pulse
100ms
10ms
1ms
DC
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
0
10
20
30
40
50
0 1.0 2.0 3.0 4.0 5.0
P
D
= 20W
V
GS
= 5V Tc = 25°C
Pulse Test
2.5V
1.5V
2V
3V
4V
0
4
8
12
16
20
0 0.4 0.8 1.2 1.6 2.0
2V
2.5V
1.5V
4V
V
GS
= 5V
P
D
= 20W
Tc = 25°C
Pulse Test
PERFORMANCE CURVES
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30KMH-03
HIGH-SPEED SWITCHING USE
0
10
20
30
40
50
10
0
357 2 10
1
357 2 10
2
32357
V
GS
= 2.5V
Tc = 25°C
Pulse Test
4V
0
8
16
24
32
40
0 1.0 2.0 3.0 4.0 5.0
Tc = 25°C
V
DS
= 10V
Pulse Test
0
1.0
2.0
3.0
4.0
5.0
0 1.0 2.0 3.0 4.0 5.0
I
D
= 50A
Tc = 25°C
Pulse Test
30A
10A
10
2
3
5
7
10
3
2
3
5
7
10
4
2
3
2
5
7
10
0
210
1
357357 2 10
2
357 23
2
Ciss
Coss
Crss
Tch = 25°C
f = 1MH
Z
V
GS
= 0V
10
0
10
1
23457 10
2
23457
10
1
10
2
2
3
4
5
7
10
3
2
3
4
5
7
t
d(off)
t
d(on)
t
r
Tch = 25°C
V
DD
= 15V
V
GS
= 4V
R
GEN
= R
GS
= 50Ω
t
f
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (mΩ)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT ID (A)
FORWARD TRANSFER
ADMITTANCE yfs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT ID (A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
10
0
10
1
23457 10
2
23457
10
0
10
1
2
3
4
5
7
10
2
2
3
4
5
7
T
C
= 25°C 75°C 125°C
V
DS
= 5V
Pulse Test
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30KMH-03
HIGH-SPEED SWITCHING USE
0
1.0
2.0
3.0
4.0
5.0
0 4 8 12 16 20
V
DS
= 10V
20V
25V
Tch = 25°C
I
D
= 30A
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(ch–c)
(°C/W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
10
–1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
–50 0 50 100 150
V
GS
= 4V
I
D
= 1/2I
D
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
–50 0 50 100 150
V
DS
= 10V
I
D
= 1mA
0.4
0.6
0.8
1.0
1.2
1.4
–50 0 50 100 150
V
GS
= 0V
I
D
= 1mA
0
10
20
30
40
50
0 0.4 0.8 1.2 1.6 2.0
T
C
= 125°C
75°C
25°C
V
GS
= 0V
Pulse Test
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
–4
23 57 23 57 23 57 23 57
10
0
23 57
10
1
23 57
10
2
10
–3
10
–2
10
–1
P
DM
tw
D
=
T
tw
T
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
