Transistor 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD968 and 2SD968A Unit: mm Parameter Symbol Collector to 2SB789 base voltage 2SB789A Collector to 2SB789 Ratings -100 VCBO -120 -100 VCEO emitter voltage 2SB789A * -120 0.40.08 Unit +0.25 0.4max. (Ta=25C) +0.1 Absolute Maximum Ratings 45 4.0-0.20 High collector to emitter voltage VCEO. Large collector power dissipation PC. 1.0-0.2 2.60.1 1.50.1 4.50.1 1.60.2 2.50.1 Features 0.50.08 1.50.1 0.40.04 3.00.15 V 3 2 1 V marking Emitter to base voltage VEBO -5 V Peak collector current ICP -1 A Collector current IC -0.5 A Collector power dissipation PC* 1 W Junction temperature Tj 150 C Storage temperature Tstg -55 ~ +150 C 1:Base 2:Collector 3:Emitter EIAJ:SC-62 Mini Power Type Package Marking symbol : D(2SB789) E(2SB789A) Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion Electrical Characteristics (Ta=25C) Parameter Conditions Symbol Collector to emitter 2SB789 voltage 2SB789A Collector to base voltage Forward current transfer ratio min typ max -100 VCEO IC = -100A, IB = 0 VEBO IE = -10A, IC = 0 -5 hFE1* VCE = -10V, IC = -150mA 90 50 V -120 V 220 hFE2 VCE = -5V, IC = -500mA Collector to emitter saturation voltage VCE(sat) IC = -500mA, IB = -50mA - 0.2 - 0.6 Base to emitter saturation voltage VBE(sat) IC = -500mA, IB = -50mA - 0.85 -1.2 Transition frequency fT VCB = -10V, IE = 50mA, f = 200MHz Collector output capacitance Cob VCB = -10V, IE = 0, f = 1MHz *h FE1 Unit 120 V V MHz 30 pF Rank classification Marking Symbol Rank Q R hFE1 90 ~ 155 130 ~ 220 2SB789 DQ DR 2SB789A EQ ER 1 Transistor 2SB789, 2SB789A PC -- Ta IC -- VCE Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. -1.2 Ta=25C -1.0 -18mA -16mA -14mA 1.0 - 0.8mA - 0.6mA - 0.4mA - 0.6 0.6 - 0.4 0.4 - 0.2mA - 0.2 0.2 0 - 0.4 - 0.2 40 60 80 100 120 140 160 0 0 IC/IB=10 -30 -10 -3 -1 Ta=75C 25C -25C - 0.3 -4 -6 -8 -10 -12 -100 -30 -10 -3 25C Ta=-25C 75C - 0.1 - 0.03 - 0.03 -1 -3 -10 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 Collector current IC (A) Collector output capacitance Cob (pF) 140 120 100 80 60 40 20 0 3 10 -10 30 Emitter current IE (mA) 100 IE=0 f=1MHz Ta=25C 45 40 35 30 25 20 15 10 5 0 -1 -3 -10 -9 -12 -15 VCE=-10V -30 500 400 300 Ta=75C 200 25C -25C 100 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 Collector current IC (A) Cob -- VCB 160 1 -3 50 VCB=-10V Ta=25C 180 -1 Collector current IC (A) fT -- IE 200 -6 600 IC/IB=10 -1 -3 Base current IB (mA) hFE -- IC - 0.3 - 0.1 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 0 VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) -100 -2 Collector to emitter voltage VCE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) - 0.6 Forward current transfer ratio hFE 20 Ambient temperature Ta (C) Transition frequency fT (MHz) - 0.8 0 0 2 -1.0 -12mA -10mA - 0.8 0.8 VCE=-10V Ta=25C IB=-20mA Collector current IC (A) 1.2 IC -- I B -1.2 Collector current IC (A) Collector power dissipation PC (W) 1.4 -100 Collector to base voltage VCB (V) -10