1
Transistor
2SB789, 2SB789A
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SD968 and 2SD968A
■Features
●High collector to emitter voltage VCEO.
●Large collector power dissipation PC.
■Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package
4.5±0.1
2.6±0.1
2.5±0.1
0.4max.1.0
+0.1
–0.2
4.0
+0.25
–0.20
3.0±0.15
1.5±0.1
0.4±0.08
0.5±0.08
1.5±0.1
0.4±0.04
1.6±0.2
45°
marking
321
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC*
Tj
Tstg
Ratings
–100
–120
–100
–120
–5
–1
–0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
2SB789
2SB789A
2SB789
2SB789A
■Electrical Characteristics (Ta=25˚C)
Parameter
Collector to emitter
voltage
Collector to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
VCEO
VEBO
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
IC = –100µA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –150mA
VCE = –5V, IC = –500mA
IC = –500mA, IB = –50mA
IC = –500mA, IB = –50mA
V
CB
= –10V, I
E
= 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–100
–120
–5
90
50
typ
– 0.2
– 0.85
120
max
220
– 0.6
–1.2
30
Unit
V
V
V
V
MHz
pF
Marking symbol : D(2SB789)
E(2SB789A)
*Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
2SB789
2SB789A
*hFE1 Rank classification
Rank Q R
hFE1 90 ~ 155 130 ~ 220
2SB789 DQ DR
2SB789A EQ ER
Marking
Symbol
2
Transistor 2SB789, 2SB789A
0 16040 12080 14020 10060
0
1.4
1.2
0.4
1.0
0.8
0.2
0.6
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (˚C)
Collector power dissipation P
C
(W)
0 –12–10–8–2 –6–4
0
–1.2
–1.0
– 0.8
– 0.6
– 0.4
– 0.2
Ta=25˚C
–18mA
–16mA
–14mA –12mA
–10mA
– 0.8mA
– 0.6mA
– 0.4mA
– 0.2mA
I
B
=–20mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
0 –15–9–3 –6 –12
0
–1.2
–1.0
– 0.8
– 0.6
– 0.4
– 0.2
V
CE
=–10V
Ta=25˚C
Base current I
B
(mA)
Collector current I
C
(A)
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100 I
C
/I
B
=10
–25˚C
Ta=75˚C
25˚C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V)
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100 I
C
/I
B
=10
Ta=–25˚C
75˚C
25˚C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V)
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
0
600
500
400
300
200
100
V
CE
=–10V
Ta=75˚C
25˚C
–25˚C
Collector current I
C
(A)
Forward current transfer ratio h
FE
1 3 10 30 100
0
200
160
120
80
40
180
140
100
60
20
V
CB
=–10V
Ta=25˚C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz)
–1 –3 –10 –30 –100
0
50
40
30
20
10
45
35
25
15
5
I
E
=0
f=1MHz
Ta=25˚C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF)
PC — Ta IC — VCE IC — IB
VCE(sat) — ICVBE(sat) — IChFE — IC
fT — IECob — VCB
