MMBT4124-13 - DIODES Incorporated

DS30105 Rev. 8 - 2 1 of 3 MMBT4124

www.diodes.com ã Diodes Incorporated

Features

Maximum Ratings @ TA= 25°C unless otherwise specified

TOP VIEW

Mechanical Data

MMBT4124

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

·Epitaxial Planar Die Construction

·Complementary PNP Type Available (MMBT4126)

·Ideal for Medium Power Amplification and Switching

·Available in Lead Free/RoHS Compliant Version (Note 2)

·Case: SOT-23

·Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

·Moisture Sensitivity: Level 1 per J-STD-020C

·Terminal Connections: See Diagram

·Terminals: Solderable per MIL-STD-202, Method 208

·Also Available in Lead Free Plating (Matte Tin Finish

annealed over Alloy 42 leadframe). Please see Ordering

Information, Note 5, on Page 2

·Marking (See Page 2): K1B

·Ordering & Date Code Information: See Page 2

·Weight: 0.008 grams (approximate)

Characteristic Symbol MMBT4124 Unit

Collector-Base Voltage VCBO 30 V

Collector-Emitter Voltage VCEO 25 V

Emitter-Base Voltage VEBO 5.0 V

Collector Current - Continuous (Note 1) IC200 mA

Power Dissipation (Note 1) Pd300 mW

Thermal Resistance, Junction to Ambient (Note 1) RqJA 417 °C/W

Operating and Storage and Temperature Range Tj,T

STG -55 to +150 °C

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

SOT-23

Dim Min Max

A0.37 0.51

B1.20 1.40

C2.30 2.50

D0.89 1.03

E0.45 0.60

G1.78 2.05

H2.80 3.00

J0.013 0.10

K0.903 1.10

L0.45 0.61

M0.085 0.180

a0°8°

All Dimensions in mm

SPICE MODEL: MMBT4124

DS30105 Rev. 8 - 2 2 of 3 MMBT4124

www.diodes.com

Electrical Characteristics @ TA = 25°C unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 3)

Collector-Base Breakdown Voltage V(BR)CBO 30 ¾VIC= 10mA, IE = 0

Collector-Emitter Breakdown Voltage V(BR)CEO 25 ¾VIC= 1.0mA, IB = 0

Emitter-Base Breakdown Voltage V(BR)EBO 5.0 6.0 V IE = 10mA, IC = 0

Collector Cutoff Current ICBO ¾50 nA VCB = 20V, IE = 0V

Emitter Cutoff Current IEBO ¾50 nA VEB = 3.0V, IC = 0V

ON CHARACTERISTICS (Note 3)

DC Current Gain hFE 120

360

¾¾IC = 2.0mA, VCE = 1.0V

IC = 50mA, VCE = 1.0V

Collector-Emitter Saturation Voltage VCE(SAT) ¾0.30 V IC = 50mA, IB = 5.0mA

Base-Emitter Saturation Voltage VBE(SAT) ¾0.95 V IC = 50mA, IB = 5.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance Cobo ¾4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0

Input Capacitance Cibo ¾8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0

Small Signal Current Gain hfe 120 480 ¾VCE = 1.0V, IC = 2.0mA,

f = 1.0kHz

Current Gain-Bandwidth Product fT300 ¾MHz VCE = 20V, IC = 10mA,

f = 100MHz

Notes: 3. Short duration test pulse used to minimize self-heating effect.

4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBT4124-7-F.

Ordering Information (Note 4)

Device Packaging Shipping

MMBT4124-7 SOT-23 3000/Tape & Reel

Marking Information

K1B

K1B = Product Type Marking Code

YM = Date Code Marking

Y = Year ex: N = 2002

M = Month ex: 9 = September

Date Code Key

Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1234567

89 OND

Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009

Code JKLMNPR

ST U VW

DS30105 Rev. 8 - 2 3 of 3 MMBT4124

www.diodes.com

0.1

0.1 1 10 100 1000

V , BASE-EMITTER (V)

BE(SAT)

SATURATION VOLTAGE

I , COLLECTOR CURRENT (mA)

Fig. 5, Typical Base-Emitter

Saturation Volta

e vs. Collector Current

IB=10

0.01

0.1

0.1 1 10 100 1000

V , COLLECTOR-EMITTER (V)

CE(SAT)

SATURATION VOLTAGE

I , COLLECTOR CURRENT (mA)

Fig. 4, Typical Collector-Emitter

Saturation Volta

e vs. Collector Current

IB=10

1000

100

0.1 110 1000

100

h , DC CURRENT GAIN

I , COLLECTOR CURRENT (mA)

Fig. 3, Typical DC Current Gain vs

Collector Current

T = -25°C

T = +25°C

T = 125°C

V = 1.0V

0.1 110 100

C , INPUT CAPACITANCE (pF)

IBO

C , OUTPUT CAPACITANCE (pF)

OBO

V , COLLECTOR-BASE VOLTAGE (V)

Fig. 2, Input and Output Capacitance vs.

Collector-Base Volta

Cibo

Cobo

f=1MHz

100

25 50 75 100 125 150 175 200

P , POWER DISSIPATION (mW)

T , AMBIENT TEMPERATURE (°C)

Fig. 1, Max Power Dissipation vs

Ambient Tem

erature

150

200

250

300

350