TOSHIBA TRANSISTOR 2SA1225 SILICON PNP EPITAXIAL TYPE(PCT PROCESS) SEMICONDUCTOR TOSHIBA TECHNICAL DATA (28A1225) POWER AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. . 6.8MAX. a B2402| 0.6 MAX. High Transition Frequency : fp=100MHz(Typ.) pi) ind Complementary to 28C2983 | 4 us MAXIMUM RATINGS (Ta = 25C) aosMax. 2 a CHARACTERISTIC SYMBOL | RATING UNIT |] 2640251 Q OG MAE. Collector-Base Voltage VCBO 160 Vv I 2.5] 2.3 Collector-Emitter Voltage VCEO 160 Vv Emitter-Base Voltage VEBO 5 Vv Collector Current Ic -15 A ae Base Current Ip 0.3 A 1. BASE Collector Power Ta=25C P 1.0 Ww 2. COLLECTOR (FIN) Dissipation Te =25C Cc 15 3. EMITTER Junction Temperature Tj 150 C JEDEC _ Storage Temperature Range Tstg 55~150 C EIA TOSHIBA 2-7BIA Weight : 0.36 ELECTRICAL CHARACTERISTICS (Ta = 25C) oe 8 CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current IcBo VcB= 160V, Ip=0 |-10] 4A Emitter Cut-off Current IEBO VEB= 5V, Ic=0 |-1.0] pA Collector-Emitter Breakdown Voltage V(BR)CEO |Ic=10mA, Ip=0 160) _ Vv Emitter-Base Breakdown Voltage V(BR)EBO |1E=1mA, Ic=0 8} 7 v DC Current Gain hFE VoRr=5V, Ic=100mA 70| | 240 (Note) , Collector Emitter Saturation Voltage VcK(sat) |Ic=500mA, Ip = 50mA _ |-15)] V Base-Emitter Voltage VBE VcE= 5V, Ic = 500mA |-10] V Transition Frequency ft VcE=10V, Ic= -100mA 100 | MHz Collector Output Capacitance Cob Vcp= 10V, In=0, f=1MHz 30 pF Note : hpg Classification O: 70~140, Y : 120~240 The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by 2SA1 225 = 1 TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ 1994 -5-14 These TOSHIBA products are intended for use in general commercial applications (office equipment, communication equipment, measuring equiprnent, domestic appliances, etc.). please make sure that you consult with us before you use these TOSHIBA products in equipment which requires extraordinarily high quality and/or reliability, and in equipment which may involve life threatening or critical application, including but not limited to such uses as atomic energy control, airplane or spaceship instrumentation, traffic signals, medical instrumentation, combustion control, all types of safety devices, etc. TOSHIBA cannot accept and hereby disclaims liability for any damage which may occur in case the TOSHIBA products are used in such equipment or applications without prior consultation with TOSHIBA. TOSHIBA CORPORATIONSEMICONDUCTOR TOSHIBA TECHNICAL DATA 2$A1225 (28A1225) Ic VCE COMMON EMITTER Te=25C Ig (A) 20 COLLECTOR CURRENT 0 -2 4 6 -8 10 COLLECTOR-EMITTER VOLTAGE Vor (V) VCE(sat) IC COMMON EMITTER Ic /Ip=10 -5 -0.5 Te=100C -0.3 -0.1 COLLECTOR-EMITTER SATURATION VOLTAGE VoE(gat) (V) 0.05 -0.003 -0.01 -0.03 -0.1 -0.3 -1 -2 COLLECTOR CURRENT Ic (A) Po - Ta D Ta=Te INFINITE HEAT SINK CERAMIC SUBSTRATE 50X50 X0.8mmt NO HEAT SINK COLLECTOR POWER DISSIPATION Po (WwW) 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta (C) DC CURRENT GAIN hpE TRANSITION FREQUENCY fy (MHz) Ig (A) COLLECTOR CURRENT hrE Ic 1000 COMMON EMITTER Voe=-5V 500 300 Te=100C 100 25 25 50 30 10 -0.003 -0.01 0.03 -0.1 0.3 -1 -2 COLLECTOR CURRENT Ig (A) ft Ic 300 COMMON EMITTER Vop=10V To=25C 100 50 30 10 -5 -10 -30 -50 -100 -300-500 1000 COLLECTOR CURRENT Ic (mA) SAFE OPERATING AREA ~ 5 FTG MAX. (PULSED) & A gH A. Aimsx 38 Cr TI NON | _1[ Ic MAX. ANAL 10ms% (CONTINUOUS) 0.5 EN 03 DC OPERATION Pop ty I i \ UN) | TTAAA -0.1 a o.0s| > SINGLE NONREPETITIVE NS 008 PULSE Te=25C X i CURVES MUST BE DERATED LINEARLY WITH INCREASE -0.01 IN TEMPERATURE. Voro MAX. 0.005 03 -1 -3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE VoE (CV) 25$A1225 -2* 1994-5-14 TOSHIBA CORPORATION