PAGE . 1
October 31,2011-REV.01
MMDT4401
DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE 40 Volts 225 mWatts
FEATURES
• NPN epitaxial silicon, planar design
• Collector-emitter voltage VCE =40V
• Collector current IC = 600mA
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-363, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0002 ounces, 0.006 grams
• Marking: M4A
POWER
ABSOLUTE RATINGS (TA=25oC unless otherwise noted)
PARAMETER Symbol Value Units
Collector - Emitter Voltage V
CEO
40 V
Collector - Base Voltage V
CBO
60 V
Emitter - Base Voltage V
EBO
6.0 V
Collector Current - Continuous I
C
600 mA
THERMAL CHARACTERISTICS (TA=25oC unless otherwise noted)
PARAMETER Symbol Value Units
Max Power Dissipation (Note1) P
TOT
225 mW
Thermal Resistance, Junction to Ambient R
ΘJA
625
o
C/W
Junction Temperature T
J
-55 to 150
o
C
Storage Temperature T
STG
-55 to 150
o
C
Note 1: Transistor mounted on FR-4 board 1.0X0.85X0.062 in.
PAGE . 2
October 31,2011-REV.01
MMDT4401
PARAMETER Symbol Test Condition MIN. TYP. MAX. Units
Collector - Emitter Breakdown Voltage V
(BR)
CEO I
C
=1.0mA, I
B
=0 40 - - V
Collector - Base Breakdown Voltage V
(BR)
CBO I
C
=100uA, I
E
=0 60 - - V
Emitter - Base Breakdown Voltage V
(BR)
EBO I
E
=100uA, I
C
=0 6.0 - - V
Base Cutoff Current I
BL
V
CE
=35V, V
EB
=0.4V - - 100 nA
Collector Cutoff Current I
CEX
V
CE
=35V, V
EB
=0.4V - - 100 nA
DC Current Gain (Note 2) h
FE
I
C
=0.1mA, V
CE
=1.0V
I
C
=1.0mA, V
CE
=1.0V
I
C
=10mA, V
CE
=1.0V
I
C
=150mA, V
CE
=1.0V
I
C
=500mA, V
CE
=2.0V
20
40
80
100
40
-
-
-
-
-
-
-
-
300
-
-
Collector - Emitter Saturation Voltage
(Note 2) V
CE(SAT)
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA --
0.40
0.75 V
Base - Emitter Saturation Voltage
(Note 2) V
BE(SAT)
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
0.75
-
-
-
0.95
1.20 V
Collector - Base Capacitance C
CBO
V
CB
=5V, I
E
=0, f=1MHz - - 6.5 pF
Emitter - Base Capacitance C
EBO
V
CB
=0.5V, I
C
=0, f=1MHz - - 30 pF
Current Gain - Bandwidth Product F
T
V
CE
=10V, I
C
=20mA, f=100MHz 250 - - MHz
Delay Time td V
CC
=30V,V
BE
=2.0V,
I
C
=150mA,I
B1
=15mA --15ns
Rise Time tr V
CC
=30V,V
BE
=2.0V,
I
C
=150mA,I
B1
=15mA --20ns
Storage Time ts V
CC
=30V,I
C
=150mA
I
B
1=I
B
2=15mA - - 225 ns
Fall Time tf V
CC
=30V,I
C
=150mA
I
B
1=I
B
2=15mA --30ns
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
PAGE . 3
MOUNTING PAD LAYOUT
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
ORDER INFORMATION
LEGAL STATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
MMDT4401
SOT-363
0.018
(0.45)
0.020
(0.50)
0.075
(1.90)
0.026
(0.65)
0.026
(0.65)
Unit inch(mm)：
October 31,2011-REV.01
