DPG60IM300PC
Low Loss and Soft Recovery
High Performance Fast Recovery Diode
Single Diode
HiPerFRED²
2/4
1
3
Part number
DPG60IM300PC
Backside: cathode
FAV
rr
tns35
RRM
60
300
=
V= V
I= A
Features / Ad vantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
TO-263 (D2Pak)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20131125aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG60IM300PC
n
s
3.5
A
T
VJ
=°C
reverse recovery time
A
9
35
65
n
s
I
RM
max. reverse recovery current
I
F
=A;60
25
T=125°C
VJ
-di
F
=A/µs200/dtt
rr
V
R
=V200
T
VJ
=°C25
T=125°C
VJ
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
1.43
R0.45 K/
W
R
min.
60
V
RSM
V
1T = 25°C
VJ
T = °C
VJ
m
A
0.35V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
135
P
tot
335
W
T = 25°C
C
RK/
W
60
300
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
1.78
T = 25°C
VJ
150
V
F0
V
0.69T = °C
VJ
175
r
F
6.4 m
Ω
V
1.14T = °C
VJ
I = A
F
V
60
1.53
I = A
F
120
I = A
F
120
threshold voltage
slope resistance for power loss calculation only
µ
150
V
RRM
V
300
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
80
j
unction capacitance V = V150 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
175
550
A
300
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Fast Diode
300
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20131125aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG60IM300PC
1)
I
RMS
is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product
with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.
Ratings
Product M
a
r
k
i
n
g
Date Code
Part No.
Logo
Assembly Code
XXXXXXXXX
IXYS
Zyyww
000000
Assembly Line
D
P
G
60
IM
300
PC
Part number
Diode
HiPerFRED
extreme fast
Single Diode
TO-263AB (D2Pak) (2)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
T
VJ
°C175
virt ua l j un ctio n temp eratu re -55
Weight g2
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N60
mount ing for ce w i th cli p 20
I
RMS
RMS current 35 A
per terminal
150-55
TO-263
(
D2Pak
)
Similar Part Package Voltage class
DPG60I300HA TO-247AD (2) 300
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
1
)
DPG60IM300PC 502404Tape & Reel 800DPG60IM300PCStandard
T
stg
°C150
storage temperature -55
threshold voltage V0.69
mΩ
V
0 max
R
0 max
slope resistance * 3.2
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Fast
Diode
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131125aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG60IM300PC
W
c2
A
A1
c
L
E
2x e
L1
D
321
3.81
(0.150)
1.78
(0.07)
2.54 (0.100)
3.05
(0.120)
10.92
(0.430)
9.02
(0.355)
mm (Inches)
Recommended min. foot print
3x b2
E1
2x b
H
D1
Supplier
Option
L2
4
minmaxminmax
A 4.06 4.83 0.160 0.190
A1
A2
b 0.51 0.99 0.020 0.039
b2 1.14 1.40 0.045 0.055
c 0.40 0.74 0.016 0.029
c2 1.14 1.40 0.045 0.055
D 8.38 9.40 0.330 0.370
D1 8.00 8.89 0.315 0.350
D2
E 9.65 10.41 0.380 0.410
E1 6.22 8.50 0.245 0.335
e
e1
H 14.61 15.88 0.575 0.625
L 1.78 2.79 0.070 0.110
L1 1.02 1.68 0.040 0.066
Wtyp.
0.02 0.040 typ.
0.0008 0.002
Dim. Millimeter Inches
typ. 0.10 typ. 0.004
2.41 0.095
0.098
4.28 0.169
All dimensions conform with
and/or within JEDEC standard.
2,54 BSC 0,100 BSC
2.5
2/4
1
3
Outlines TO-263 (D2Pak)
IXYS reserves the right to change limits, conditions and dimensions. 20131125aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG60IM300PC
0.0 0.4 0.8 1.2 1.6 2.0
20
40
60
80
100
120
0 200 400 600
40
50
60
70
80
10
0
10
1
10
2
10
3
10
4
0.1
1.0
0 40 80 120 160
0.2
0.4
0.6
0.8
1.0
1.2
1.4
K
f
T
VJ
[°C] -di
F
/dt [A/μs]
t[ms]
0200400600
200
300
400
500
600
700
800
900
1000
2
3
4
5
6
7
8
9
10
0 200 400 600
4
6
8
10
12
14
16
18
20
0 200 400 600
0.2
0.3
0.4
0.5
0.6
0.7
Qrr
[μC]
VFid-]V[
F
/dt [A/μs]
Z
thJC
[K/W]
I
RM
Q
rr
V
FR
t
fr
T
VJ
= 150°C
Fig. 1 Forward current
I
F
versus V
F
Fig. 2 Typ. reverse recov. charge
Q
rr
versus -di
F
/dt
Fig. 3 Typ. reverse recovery current
I
RM
versus -di
F
/dt
Fig. 4 Typ. dynamic parameters
Q
rr
,I
RM
versus T
VJ
Fig. 5 Typ. reverse recov. time
t
rr
versus -di
F
/dt
Fig. 6 Typ. forward recovery voltage
V
FR
& time t
fr
versus di
F
/dt
Fig. 8 Transient thermal impedance junction to case
25°C
I
F
[A]
-di
F
/dt [A/μs]
I
RM
[A]
t
rr
[ns]
-di
F
/dt [A/μs]
tfr
[ns]
V
FR
[V]
0 200 400 600
2
4
6
8
10
12
14
16
E
rec
[μJ]
-di
F
/dt [A/μs]
Fig. 7 Typ. recovery energy
E
rec
versus -di
F
/dt
I
F
= 120 A
60 A
30 A
I
F
= 120 A
60 A
30 A
I
F
= 120 A
60 A
30 A
I
F
= 120 A
60 A
30 A
T
VJ
=125°C
V
R
= 200 V
T
VJ
=125°C
V
R
= 200 V
T
VJ
= 125°C
V
R
= 200 V
I
F
= 60 A
T
VJ
=125°C
V
R
= 200 V
T
VJ
= 125°C
V
R
= 200 V
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions. 20131125aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved