IGBT
Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwithRAPID1
fastandsoftantiparalleldiode
IKW50N65F5
650VDuoPackIGBTandDiode
Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
2
IKW50N65F5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwith
RAPID1fastandsoftantiparalleldiode
FeaturesandBenefits:
HighspeedF5technologyoffering
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•650Vbreakdownvoltage
•LowgatechargeQG
•IGBTcopackedwithRAPID1fastandsoftantiparalleldiode
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•Solarconverters
•Uninterruptiblepowersupplies
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
Packagepindefinition:
•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter
G
C
E
G
C
E
KeyPerformanceandPackageParameters
Type VCE ICVCEsat,Tvj=25°C Tvjmax Marking Package
IKW50N65F5 650V 50A 1.6V 175°C K50EF5 PG-TO247-3
3
IKW50N65F5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
4
IKW50N65F5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value Unit
Collector-emitter voltage VCE 650 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=100°C
IC80.0
56.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 150.0 A
TurnoffsafeoperatingareaVCE≤650V,Tvj≤175°C - 150.0 A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=100°C
IF40.0
27.0
A
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 150.0 A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20
±30 V
PowerdissipationTC=25°C
PowerdissipationTC=100°C Ptot 305.0
152.5 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s 260 °C
Mounting torque, M3 screw
Maximum of mounting processes: 3 M0.6 Nm
ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,
junction - case Rth(j-c) 0.50 K/W
Diode thermal resistance,
junction - case Rth(j-c) 1.50 K/W
Thermal resistance
junction - ambient Rth(j-a) 40 K/W
5
IKW50N65F5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=50.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.60
1.80
1.90
2.10
-
-
V
Diode forward voltage VF
VGE=0V,IF=27.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.45
1.40
1.40
1.80
-
-
V
Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 3.2 4.0 4.8 V
Zero gate voltage collector current ICES
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
-
-
40.0
4000.0
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=50.0A - 62.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 3000 -
Output capacitance Coes - 65 -
Reverse transfer capacitance Cres - 11 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=520V,IC=50.0A,
VGE=15V - 120.0 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) - 21 - ns
Rise time tr- 15 - ns
Turn-off delay time td(off) - 175 - ns
Fall time tf- 18 - ns
Turn-on energy Eon - 0.49 - mJ
Turn-off energy Eoff - 0.16 - mJ
Total switching energy Ets - 0.65 - mJ
Tvj=25°C,
VCC=400V,IC=25.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=12.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
6
IKW50N65F5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Turn-on delay time td(on) - 19 - ns
Rise time tr- 4 - ns
Turn-off delay time td(off) - 195 - ns
Fall time tf- 10 - ns
Turn-on energy Eon - 0.11 - mJ
Turn-off energy Eoff - 0.04 - mJ
Total switching energy Ets - 0.15 - mJ
Tvj=25°C,
VCC=400V,IC=6.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=12.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr - 52 - ns
Diode reverse recovery charge Qrr - 0.55 - µC
Diode peak reverse recovery current Irrm - 16.5 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -450 - A/µs
Tvj=25°C,
VR=400V,
IF=25.0A,
diF/dt=1200A/µs
Diode reverse recovery time trr - 32 - ns
Diode reverse recovery charge Qrr - 0.26 - µC
Diode peak reverse recovery current Irrm - 13.3 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -1619 - A/µs
Tvj=25°C,
VR=400V,
IF=6.0A,
diF/dt=1200A/µs
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=150°C
Turn-on delay time td(on) - 20 - ns
Rise time tr- 15 - ns
Turn-off delay time td(off) - 202 - ns
Fall time tf- 3 - ns
Turn-on energy Eon - 0.68 - mJ
Turn-off energy Eoff - 0.21 - mJ
Total switching energy Ets - 0.89 - mJ
Tvj=150°C,
VCC=400V,IC=25.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=12.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Turn-on delay time td(on) - 18 - ns
Rise time tr- 5 - ns
Turn-off delay time td(off) - 245 - ns
Fall time tf- 12 - ns
Turn-on energy Eon - 0.18 - mJ
Turn-off energy Eoff - 0.06 - mJ
Total switching energy Ets - 0.24 - mJ
Tvj=150°C,
VCC=400V,IC=6.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=12.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
7
IKW50N65F5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
DiodeCharacteristic,atTvj=150°C
Diode reverse recovery time trr - 81 - ns
Diode reverse recovery charge Qrr - 1.24 - µC
Diode peak reverse recovery current Irrm - 22.0 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -340 - A/µs
Tvj=150°C,
VR=400V,
IF=25.0A,
diF/dt=1200A/µs
Diode reverse recovery time trr - 46 - ns
Diode reverse recovery charge Qrr - 0.60 - µC
Diode peak reverse recovery current Irrm - 19.5 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -825 - A/µs
Tvj=150°C,
VR=400V,
IF=6.0A,
diF/dt=1200A/µs
8
IKW50N65F5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C;VGE=15V.
RecommendeduseatVGE≥7.5V)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
1 10 100 1000
0.1
1
10
100
tp=1µs
10µs
50µs
100µs
200µs
500µs
DC
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot,POWERDISSIPATION[W]
25 50 75 100 125 150 175
0
30
60
90
120
150
180
210
240
270
300
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
TC,CASETEMPERATURE[°C]
IC,COLLECTORCURRENT[A]
25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
90
Figure 4. Typicaloutputcharacteristic
(Tvj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
012345
0
15
30
45
60
75
90
105
120
135
150
VGE=20V
18V
15V
12V
10V
8V
7V
6V
5V
9
IKW50N65F5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Figure 5. Typicaloutputcharacteristic
(Tvj=150°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
012345
0
15
30
45
60
75
90
105
120
135
150
VGE=20V
18V
15V
12V
10V
8V
7V
6V
5V
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
Tj=25°C
Tj=150°C
Figure 7. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
Tvj,JUNCTIONTEMPERATURE[°C]
VCEsat,COLLECTOR-EMITTERSATURATION[V]
0 25 50 75 100 125 150 175
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
IC=12,5A
IC=25A
IC=50A
Figure 8. Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=12Ω,Dynamictestcircuitin
Figure E)
IC,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
0 30 60 90 120 150
1
10
100
1000
td(off)
tf
td(on)
tr
10
IKW50N65F5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Figure 9. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=25A,Dynamictestcircuitin
Figure E)
rG,GATERESISTOR[Ω]
t,SWITCHINGTIMES[ns]
5 15 25 35 45 55 65 75 85
1
10
100
1000
td(off)
tf
td(on)
tr
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=25A,rG=12Ω,Dynamictestcircuitin
Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
25 50 75 100 125 150 175
1
10
100
1000
td(off)
tf
td(on)
tr
Figure 11. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.5mA)
Tvj,JUNCTIONTEMPERATURE[°C]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
0 25 50 75 100 125 150
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
typ.
min.
max.
Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=12Ω,Dynamictestcircuitin
Figure E)
IC,COLLECTORCURRENT[A]
E,SWITCHINGENERGYLOSSES[mJ]
0 30 60 90 120 150
0
1
2
3
4
5
6
7
8
9
10
11
Eoff
Eon
Ets
11
IKW50N65F5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=25A,Dynamictestcircuitin
Figure E)
rG,GATERESISTOR[Ω]
E,SWITCHINGENERGYLOSSES[mJ]
5 15 25 35 45 55 65 75 85
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
Eoff
Eon
Ets
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=25A,rG=12Ω,Dynamictestcircuitin
Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
E,SWITCHINGENERGYLOSSES[mJ]
25 50 75 100 125 150 175
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Eoff
Eon
Ets
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=15/0V,
IC=25A,rG=12Ω,Dynamictestcircuitin
Figure E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
200 250 300 350 400 450 500
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Eoff
Eon
Ets
Figure 16. Typicalgatecharge
(IC=50A)
QGE,GATECHARGE[nC]
VGE,GATE-EMITTERVOLTAGE[V]
0 20 40 60 80 100 120
0
2
4
6
8
10
12
14
16
130V
520V
12
IKW50N65F5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,CAPACITANCE[pF]
0 5 10 15 20 25 30
1
10
100
1000
1E+4 Cies
Coes
Cres
Figure 18. IGBTtransientthermalresistance
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
0.1621884
8.6E-4
2
0.2278266
0.01112208
3
0.109985
0.09568113
Figure 19. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
0.4131024
1.4E-4
2
0.4494995
1.3E-3
3
0.4867563
0.01007841
4
0.1506418
0.09232929
Figure 20. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
trr,REVERSERECOVERYTIME[ns]
500 600 700 800 900 1000 1100 1200 1300 1400 1500
30
40
50
60
70
80
90
100
110
120
130
Tj=25°C, IF = 25A
Tj=150°C, IF = 25A
13
IKW50N65F5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Figure 21. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Qrr,REVERSERECOVERYCHARGE[µC]
500 700 900 1100 1300 1500
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
Tj=25°C, IF = 25A
Tj=150°C, IF = 25A
Figure 22. Typicalreverserecoverycurrentasa
functionofdiodecurrentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Irr,REVERSERECOVERYCURRENT[A]
500 700 900 1100 1300 1500
5
7
9
11
13
15
17
19
21
23
25
Tj=25°C, IF = 25A
Tj=150°C, IF = 25A
Figure 23. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
500 700 900 1100 1300 1500
-500
-450
-400
-350
-300
-250
-200
-150
-100
-50
0
Tj=25°C, IF = 25A
Tj=150°C, IF = 25A
Figure 24. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
0.0 0.5 1.0 1.5 2.0 2.5
0
9
18
27
36
45
54
63
72
81
Tj=25°C
Tj=150°C
14
IKW50N65F5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Figure 25. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
Tvj,JUNCTIONTEMPERATURE[°C]
VF,FORWARDVOLTAGE[V]
25 50 75 100 125 150 175
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IF=13,5A
IF=27A
IF=54A
15
IKW50N65F5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Package Drawing PG-TO247-3
16
IKW50N65F5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
t
ab
td(off) tftr
td(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
t
t
90% VGE
VGE(t)
t
t
t
t1t4
2% IC
10% VGE
2% VCE
t2t3
E
t
t
V I t
off = x x d
1
2
CE C
E
t
t
V I t
on = x x d
3
4
CE C
CC
dI /dt
F
dI
I,V
Figure A.
Figure B.
Figure C. Definition of diode switching
characteristics
Figure E. Dynamic test circuit
Figure D.
I (t)
C
Parasitic inductance L ,
parasitic capacitor C ,
relief capacitor C ,
(only for ZVT switching)
s
s
r
t t t
Q Q Q
rr a b
rr a b
= +
= +
QaQb
V (t)
CE
VGE(t)
I (t)
C
V (t)
CE
Testing Conditions
17
IKW50N65F5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
RevisionHistory
IKW50N65F5
Revision:2015-05-05,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2012-11-09 Preliminary data sheet
1.2 2013-12-18 New Marking Pattern
2.1 2015-05-05 Final data sheet
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InfineonTechnologiesAG
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©2015InfineonTechnologiesAG
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LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.
Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe
applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,
includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin
question,pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems
and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon
Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,
automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life
supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain
and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe
endangered.
