SQD40N04-10A www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY VDS (V) * Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.010 RDS(on) () at VGS = 4.5 V 0.014 ID (A) * TrenchFET(R) Power MOSFET * Package with Low Thermal Resistance * 100 % Rg and UIS Tested 42 Configuration Single * AEC-Q101 Qualifiedd D * Compliant to RoHS Directive 2002/95/EC TO-252 G Drain Connected to Tab G D S S Top View N-Channel MOSFET ORDERING INFORMATION Package TO-252 Lead (Pb)-free and Halogen-free SQD40N04-10A-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 40 Gate-Source Voltage VGS 20 TC = 25 C Continuous Drain Currenta Continuous Source Current (Diode ID TC = 125 C Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 C Operating Junction and Storage Temperature Range V 42 35 IS 42 IDM 168 IAS 30 EAS 45 PD TC = 125 C UNIT 71 24 A mJ W TJ, Tstg - 55 to + 175 C SYMBOL LIMIT UNIT RthJA 50 RthJC 2.1 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountc Junction-to-Case (Drain) C/W Notes a. Package limited. b. Pulse test; pulse width 300 s, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. S11-2046-Rev. B, 24-Oct-11 1 Document Number: 68847 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD40N04-10A www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0 V, ID = 250 A 40 - - VGS(th) VDS = VGS, ID = 250 A 1.5 2.0 2.5 VDS = 0 V, VGS = 20 V IGSS - - 100 VGS = 0 V VDS = 40 V - - 1.0 - - 50 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 40 V, TJ = 125 C VGS = 0 V VDS = 40 V, TJ = 175 C - - 150 On-State Drain Currenta ID(on) VGS = 10 V VDS5 V 50 - - VGS = 10 V ID = 20 A - 0.006 0.010 VGS = 10 V ID = 20 A, TJ = 125 C - - 0.016 VGS = 10 V ID = 20 A, TJ = 175 C - - 0.019 VGS = 4.5 V ID = 20 A - 0.011 0.014 - 58 - Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) gfs VDS = 15 V, ID = 40 A V nA A A S Dynamicb - 1755 2190 - 385 480 Crss - 250 315 Qg - 46 70 - 6.2 - - 13.5 - f = 1 MHz 1.1 2.2 3.3 - 7 10 VDD = 20 V, RL = 0.5 ID 40 A, VGEN = 10 V, Rg = 1 - 10 15 - 25 37 - 9 14 - - 168 A - 0.8 1.2 V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 20 V, ID = 40 A td(on) tr td(off) tf pF nC ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 40 A, VGS = 0 V Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2046-Rev. B, 24-Oct-11 2 Document Number: 68847 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD40N04-10A www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) 100 120 V GS = 10 V thru 6 V 100 80 ID - Drain Current (A) ID - Drain Current (A) V GS = 5 V 80 60 40 V GS = 4 V 40 T C = 25 C 20 20 T C = 125 C T C = - 55 C 0 0 0 4 8 12 16 0 20 4 8 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 0.05 80 0.04 T C = - 55 C T C = 25 C 40 T C = 125 C 10 V GS = 4.5 V 0.03 0.02 0.01 20 V GS = 10 V 0 0 0 8 16 24 32 0 40 20 40 ID - Drain Current (A) 60 80 100 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 10 3000 VGS - Gate-to-Source Voltage (V) 2500 C - Capacitance (pF) 6 Output Characteristics 100 60 2 VDS - Drain-to-Source Voltage (V) RDS(on) - On-Resistance () g fs - Transconductance (S) 60 Ciss 2000 1500 1000 Coss 500 ID = 40 A 8 V DS = 20 V 6 4 2 Crss 0 0 0 5 10 15 20 25 30 35 0 40 VDS - Drain-to-Source Voltage (V) 20 30 40 50 Qg - Total Gate Charge (nC) Gate Charge Capacitance S11-2046-Rev. B, 24-Oct-11 10 3 Document Number: 68847 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD40N04-10A www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) 55 2.1 ID = 10 mA VDS - Drain-to-Source Voltage (V) ID = 30 A V GS = 10 V (Normalized) RDS(on) - On-Resistance 1.8 1.5 1.2 0.9 - 25 0 25 50 75 100 125 150 49 46 43 40 - 50 175 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) TJ - Junction Temperature (C) On-Resistance vs. Junction Temperature Drain Source Breakdown vs. Junction Temperature 100 0.05 10 0.04 RDS(on) - On-Resistance () IS - Source Current (A) 0.6 - 50 52 T J = 150 C 1 T J = 25 C 0.1 0.03 0.02 T J = 150 C 0.01 0.01 0.001 0 T J = 25 C 0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 0.5 VGS(th) Variance (V) 0.1 - 0.3 ID = 5 mA - 0.7 ID = 250 A - 1.1 - 1.5 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (C) Threshold Voltage S11-2046-Rev. B, 24-Oct-11 4 Document Number: 68847 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD40N04-10A www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted) IDM Limited 100 ID - Drain Current (A) Limited by R DS(on)* 100 s ID Limited 10 1 ms 10 ms 100 ms 1 s, 10 s, DC 1 0.1 TC = 25 C Single Pulse 0.01 0.01 BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S11-2046-Rev. B, 24-Oct-11 5 Document Number: 68847 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD40N04-10A www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note * The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) - Normalized Transient Thermal Impedance Junction-to-Case (25 C) are given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68847. S11-2046-Rev. B, 24-Oct-11 6 Document Number: 68847 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO-252AA CASE OUTLINE E A MILLIMETERS C1 e b1 D1 e1 E1 L gage plane height (0.5 mm) L1 b L3 H D L2 b2 C A2 A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 A2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.10 4.45 0.161 0.175 E 6.48 6.73 0.255 0.265 E1 4.49 5.50 0.177 0.217 e e1 2.28 BSC 4.57 BSC 0.090 BSC 0.180 BSC H 9.65 10.41 0.380 L 1.40 1.78 0.055 0.410 0.070 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.040 0.060 ECN: T11-0110-Rev. L, 18-Apr-11 DWG: 5347 Note * Dimension L3 is for reference only. Document Number: 71197 18-Apr-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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