DPG 60 IM 300 PC V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 60 A 35 ns Part number DPG 60 IM 300 PC 1 2 3 Backside: cathode Features / Advantages: Applications: Package: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Housing: TO-263 (D2Pak) Conditions rIndustry standard outline rEpoxy meets UL 94V-0 rRoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage min. typ. V VR = 300 V 1 A VR = 300 V TVJ = 150 C 0.35 mA IF = TVJ = 25 C 1.43 V 1.78 V 1.14 V 1.53 V TC = 135C 60 A TVJ = 175C 0.69 V 60 A IF = TVJ = 150 C 60 A I F = 120 A I FAV average forward current threshold voltage rF slope resistance rectangular thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ reverse recovery time junction capacitance IXYS reserves the right to change limits, conditions and dimensions. 6.4 m 0.45 K/W 175 C TC = 25 C 335 W TVJ = 45C 450 A -55 t = 10 ms (50 Hz), sine IF = t rr d = 0.5 for power loss calculation only R thJC Unit 300 I F = 120 A VF0 max. TVJ = 25 C TVJ = 25 C 60 A; VR = 200 V -di F /dt = 200 A/s VR = 150 V; f = 1 MHz TVJ = 25 C 3.5 A TVJ = 125C 9 A TVJ = 25 C 35 ns TVJ = 125C 65 ns TVJ = 25 C 80 pF Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 20100205a DPG 60 IM 300 PC Ratings Symbol Definition min. Conditions I RMS RMS current RthCH thermal resistance case to heatsink Tstg storage temperature per pin typ. 1) 1) Unit 35 0.25 -55 Weight FC max. A K/W 150 2 20 mounting force with clip C g 60 N IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Part No. Logo Part number D P G 60 IM 300 PC XXXXXXXXX IXYS yww = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Single Diode Reverse Voltage [V] TO-263AB (D2Pak) (2) Date Code Order Code abcd Ordering Standard Part Name DPG 60 IM 300 PC Similar Part DPG60I300HA IXYS reserves the right to change limits, conditions and dimensions. Marking on Product DPG60IM300PC Package TO-247AD (2) Delivering Mode Tape & Reel Base Qty Code Key 800 502404 Voltage Class 300 Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 20100205a DPG 60 IM 300 PC Outlines TO-263 (D2Pak) Dim. A A1 Millimeter Inches min max min max 4.06 4.83 0.160 0.190 typ. 0.10 typ. 0.004 b 0.51 0.99 0.020 0.039 b2 1.14 1.40 0.045 0.055 c 0.40 0.74 0.016 0.029 c2 1.14 1.40 0.045 0.029 D 8.38 9.40 0.330 0.370 D1 8.00 8.89 0.315 0.350 E 9.65 10.41 0.380 0.410 E1 6.22 8.20 0.245 0.323 e 2,54 BSC 0,100 BSC H 14.61 15.88 0.575 L 1.78 2.79 0.070 0.625 0.110 L1 1.02 1.68 0.040 0.066 L2 1.02 1.52 0.040 0.060 typ. typ. 0.040 0.0016 0.02 0.0008 All dimensions conform with and/or are within JEDEC standard. W IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 20100205a DPG 60 IM 300 PC 22 120 IF = 120 A 60 A 30 A 0.6 100 20 16 80 IF [A] IF = 120 A 60 A 30 A 18 14 0.4 IRM 12 Qrr 60 [C] TVJ = 150C 40 [A] 10 8 0.2 20 6 TVJ = 125C VR = 200 V 25C 2 0.0 0.0 0.4 0.8 1.2 VF [V] 1.6 0 0 2.0 TVJ = 125C VR = 200 V 4 200 400 600 0 200 Fig. 2 Typ. reverse recovery charge Qrr versus -diF /dt Fig. 1 Forward current IF versus forward voltage VF 1.4 80 1.2 400 Fig. 3 Typ. reverse recovery current IRM versus -diF /dt 1000 TVJ = 125C VR = 200 V 900 800 1.0 60 trr [ns] 0.6 9 VFR 8 700 7 600 6 500 5 400 4 300 3 tfr IF = 120 A 60 A 50 30 A IRM 10 TVJ = 125C VR = 200 V IF = 60 A tfr 70 Kf 0.8 600 -diF /dt [A/s] -diF /dt [A/s] VFR [ns] [V] 40 0.4 Qrr 0.2 0 30 40 80 120 160 200 0 TVJ [C] Fig. 4 Dynamic parameters Qrr, IRM versus T VJ 200 400 -diF /dt [A/s] 600 Fig. 5 Typ. reverse recovery time trr versus -diF /dt 16 0 200 400 -diF /dt [A/s] 2 600 Fig. 6 Typ. forward recovery voltage VFR & forward recovery time tfr vs. diF /dt 1.0 14 IF = 120 A 12 60 A 30 A 10 Erec 8 [J] ZthJC [K/W] 6 4 TVJ = 125C VR = 200 V 2 0 200 400 -diF /dt [A/s] 600 0.1 10 0 Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. 10 1 10 2 t [ms] 10 3 10 4 Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 20100205a