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APPLICATIONS
■Capacitor Discharge
■Pulse Power Applications
FEATURES
■The ACR300SG33 is a high voltage asymmetric
thyristor which has exceptionally fast turn-on
characteristics.
VOLTAGE RATINGS
KEY PARAMETERS
VDRM 3300V
IT(AV) 660A
ITSM 6500A
dVdt 3000V/µs
dI/dt 2000A/µs
ton 700ns
3300
ACR300SG33
Repetitive Peak
Reverse Voltage
VRRM
V
20
Lower voltage grades available.
Type Number Repetitive Peak
Off-state Voltage
VDRM
V
Fig. 1 See Package Details for further information
CURRENT RATINGS
Symbol Parameter Conditions
Double Side Cooled
IT(AV) Mean on-state current
IT(RMS) RMS value
ITContinuous (direct) on-state current
Single Side Cooled (Anode side)
IT(AV) Mean on-state current
IT(RMS) RMS value
ITContinuous (direct) on-state current
UnitsMax.
Half wave resistive load, Tcase = 80oC 660 A
Tcase = 80oC 1040 A
Tcase = 80oC 890 A
Half wave resistive load, Tcase = 80oC 470 A
Tcase = 80oC 745 A
Tcase = 80oC 570 A
ACR300SG33
Fast Turn-on Asymmetric Thyristor
Replaces April 2000 version, DS5081-2.2 DS5081-2.4 August 2000
Outline type code: G.
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SURGE RATINGS
Conditions Max. Units
Symbol Parameter
ITSM Surge (non-repetitive) on-state current
I2tI
2
t for fusing 180 kA2s
6kA
THERMAL AND MECHANICAL DATA
dc
Conditions Min. Max. Units
oC/W- 0.070Anode dc
Clamping force 7.0kN
with mounting compound
Thermal resistance - case to heatsink
Rth(c-h)
0.018
Double side -
125 oC
Tvj Virtual junction temperature
Tstg Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
Rth(j-c) Single side cooled
Symbol Parameter
Clamping force 6.0 8.0 kN
-55 125 oC
-
On-state (conducting) - 150 oC
- 0.036 oC/W
oC/W
Cathode dc - 0.092 oC/W
Double side cooled - 0.042 oC/W
10ms half sine; Tcase = 125oC
VR = 0
Fig.1 Turn-on time measurement
V
D
I
G
0.9 x 1600V
0.37 x 1600V t
t
d
t
r
I
G pk
10% I
G pk
t
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GATE TRIGGER CHARACTERISTICS AND RATINGS
VDWM = 12V, RL = 6Ω, Tcase = 25oC
Typ. Max. Units
ConditionsParameterSymbol
VGT Gate trigger voltage VDWM = 12V, RL = 6Ω, Tcase = 25oC
IGT Gate trigger current
-5V
- 500 mA
VFGM Peak forward gate voltage - -40V
V
RGM Peak reverse gate voltage
IFGM Peak forward gate current -
PGM Peak gate power -
-10V
-20A
-40W
-10W
-
ForwardAverage time 10ms max
PG(AV) Average gate power
DYNAMIC CHARACTERISTICS
VTM
ParameterSymbol Conditions
Maximum on-state voltage At 1000A peak, Tcase = 25oC
IRRM/IDRM Peak reverse and off-state current At VRRM/VDRM, Tcase = 125oC
From VDRM to 125A
Gate source 30V, 10Ω
Gate rise time = 100ns, Tj = 125˚C
dV/dt Linear rate of rise of off-state voltage To VD = 2000V, Gate open circuit, Tj = 125oC
Min. Max. Units
- 2.0 V
-60mA
3000 - V/µs
- 2000 A/µs
Rate of rise of on-state currentdI/dt
VT(TO) Threshold voltage At Tvj = 125oC
rTOn-state slope resistance At Tvj = 125oC
Latching current
1.19-V
- 0.81 mΩ
VD = 5V, Tj = 25˚C
IL- 600 mA
IHHolding current ITM = 500A, IT = 5A, Tj = 25˚C
tdDelay time VD = 3000V
Gate source = 30V, 10Ω
Gate rise time = 100ns
- 300 mA
- 350 ns
See Fig.1. Tj = 25 - 70˚C. ns50-
Rise timetr
--ns
T
j
= 25˚C
Tj = 70˚C
CURRENT CARRYING CAPABILITY AFTER CHIP SHORT CIRCUIT
In the event of a chip short-circuit due to excess anode-cathode
voltage, the device will handle a high continuous RMS fault
current without significant damage. Rating details are as follows:
Continuous current capability: 300A RMS, ac or dc in either
direction.
Conditions:
1. Device single or double side cooled.
2. Case temperature to be held at 200˚C or less.
3. A suitable high temperature clamp to be used.
4. Chip fault site resistance assumed to be 3mΩ ± 10%.
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CURVES
0
500
1000
1500
2000
2500
3000
3500
0 0.5 1 1.5 2 2.5 3 3.5 4
Instantaneous voltage, V
T
- (V)
Instantaneous current, I
T
- (A)
T
j
= 125˚C
Fig.2 On-state characteristics Fig.3 Transient thermal impedance - junction to case
0
20
40
60
80
Thermal impedance - junction to case, R
th(j-c)
- ˚C/kW
0.001 0.01 0.1 110 100
Time - (s)
Anode side cooled
Double side cooled
Fig.4 Average current rating vs temperature
25 50 75 100 125 150
Case temperature, T
c
- (˚C)
1000
900
800
700
600
500
400
300
200
100
Average current, I
T(AV)
- (A)
0
Double side cooled
Anode side cooled
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PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6x2.0 deep (in both electrodes)
Ø34 nom
27.0
25.4
Ø1.5
Cathode
Gate
Anode
Ø34 nom
Ø58.5 max
Nominal weight: 310g
Clamping force: 12kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outine type code: G
Cathode tab
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CUSTOMER SERVICE CENTRES
Central Europe Tel: +33 (0)1 58 04 91 02. Fax: +33 (0)1 58 04 91 07
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Central Europe Tel: +33 (0)1 58 04 91 02. Fax: +33 (0)1 58 04 91 07
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS5081-2 Issue No.3.4 August 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-
loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 22mm and
‘E’ 30mm discs, and bar clapms right up to 83kN fo our ‘Z’ 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
