kw, SGS-THOMSON 7 iicROELEcTRONICS 1N 5333 B > 1N 5388 B ZENER DIODES = VOLTAGE RANGE : 3.3V TO 200V me HERMETICALLY SEALED PLASTIC CASE ws HIGH SURGE CAPABILITY (up to 180W @ 8.3ms} CB 417 DESCRIPTION (Plastic) 5W silicon Zener diodes. ABSOLUTE RATINGS (limiting values} Symbol - Parameter Value Unit Prot Power Dissipation* Tame = 75C 5 w lem Continuous Reverse Current* Tamb = 75C See page 2 A lzsm | Peak Reverse Current ; Tamb = 25C See page 2 A Tstg : Storage and Junction Temperature Range ~ 65 to 175 C Ty 65 to 200 Th Maximum Temperature for Soldering during 10s at 4mm from case 230 C THERMAL RESISTANCE Symbo! : Parameter Value Unit Rin g-ay | dunctionambient* 25 C * On infinite heatsink with 710mm lead length. July 1989 Ls 751N 5333 B iN 5388 B ELECTRICAL CHARACTERISTICS (Tamp = 25C unless otherwise specified) tariizr* Types Varflzr* | tar* treflzg ta i VR oVZ Izu AV lasm hom. mex, max. max. typ. max. max. max. Tams =75C) vy {mA} {Q) T.0mA {WA} (Vv) (iatrc} {mA} (Vv) {A) (4) (i) (1) {Q) (2) {3} {4} 1N 5333 B 33 380 3.0 400 300 tO}, -6 1446 0.85 22.2 1N 5334 B 36 356 2.5 500 150 7.0 -55 1320 0.80 20.4 1N 5335 B 39 320 2.0 506 50 10} -5 1226 0.54 18.8 IN 5336 B 4,3 230 2.0 500 10 1.0 -4 1100 0.49 17.0 iN 5337 B 4? 260 2.0 456 5.0 1.0 -2 1910 0.44 15.6 P iN 53938 8 6,1 240 1.5 400 4.0 1.0 1 930 0.39 14.4 P iN 5335 B 5,6 226 1.0 400 ia 2.9 2.5 865 0.25 13.1 1N 5340 B 6.0 200 1.0 300 1.0 3.6 28 790 0.19 12.2 P 1N5341B 6,2 200 10 200 1a 3.0 3.2 765 0,10 11.8 P iN 5342 B 6.8 175 1.0 200 10 5.2 4 700 0.15 10.8 1N 5343 B 75 175 15 200 10 5,7 45 630 O15 9.8 IN 5344 B 82 150 15 200 10 6.2 48 580 0.20 8.9 1N 5345 B 8,7 150 2.0 200 10 66 43 545 0,20 8.4 IN 5346 8B 31 150 2.0 160 75 6.9 5.4 520 0.22 a1 1N 5347 B 10 125 2.0 125 5.8 7.6 5.5 475 0.22 7.3 IN 5348 B 14 125 25 125 5.0 a4 6 430 0.25 11.0 P iN 5349 B 12 100 2.5 125 2.0 a4 6.5 395, 8.25 10.7 1N 5350 B 13 100 25 100 1,0 3.9 65 365 G.25 9.3 iN 53518 14 100 25 75 1.0 10.6 7 340 6.25 5.6 P IN 5352 B 15 75 2.6 75 1.0 14.5 7 315 0.25 8.41 P 1N 5353 8 16 75 25 75 1.0 12.2 7 285 0.30 7.6 1N 5354 B 1? 70 25 75 6.5 12.39 7 280 0.35 7a P iN 5355 B 18 65 2.5 75 6.5 13.7 7.5 264 9.40 6.7 IN 5956 B i393 65 3.0 78 G5 14.4 7.5 260 6.40 B4 iN 5357 B 20 65 3.6 75 0.5 15.2 75 237 0.40 6.0 P 1N 5358 B 22 50 3.5 5 05 |, 16.7 216 0.45 5.5 P IN 5358 B 24 50 3.5 100 0.5 18.2 g 158 6.55 5.0 1N 5360 B 25 50 4.0 110 0.5 19.0 & 490 0.55 4.8 P iN 5361 8B 27 50 5.0 120 0.5 20.6 8.5 176 6.60 45 iN 5362 B 28 50 6.0 130 0.5 | 21.2 8.5 170 0.60 4.3 P iN 5363 B 30 490 8.0 1490 0.5 22.8 8.5 168 0.60 4.0 IN 5364 B 33 40 18 150 0.5 25.1 8.5 144 0.60 3.7 P iN 5365 8 36 30 14 160 0.5 27.4 9 132 0.65 34 iN 5366 B 39 ao 14 178 0.5 23.7 9 j22 0.65 3.4 iN 5367 B 43 34 20 190 0.5 | 32.7 3 110 0.70 2.8 iN 5368 B 47 25 25 210 05 35.8 9 100 0.80 2.6 IN 5369 B 51 25 27 230 05 | 38.8 9 93 0.90 2.4 IN 5370 B 56 20 a5 280 0.5 42.6 9 86 1.00 a2 IN 5371 B 60 20 4g 350 0.5 45.5 9 79 1.20 2.0 P iN 5372 B 62 20 42 400 05 | 474 9 76 1.35 19 IN 5373 B 68 20 44 500 a5 3 S17 9 70 1.50 1.8 IN 5374 B 75 20 45 620 6.5 56.0 9 63 1.60 16 iN 5375 B B2 16 65 720 05 | 62.2 9 58 1.80 1.5 1N 5376 B 87 16 75 760 0.5 66.0 g 54.5 2.00 1.4 1N 5377 B 91 16 75 760 0.5 | 69.2 9 52.5 2.20 13 P iN 5378B} 100 12 30 800 0.5 76.0 9.5 47.5 2.50 1.2 1N 5379 B 110 12 125 1000 05 83.6 9.5 43 2,50 14 1N5380B} 120 10 170 1150 05 | $1.2 9.5 39.5 2.50 1.0 1N 5381 B 130 19 190 1250 0.8 98.8 a5 36.5 2.50 0.83 iN 5382B; 140 8.0 230 1500 O5 1106 9.5 34 2.50 0.86 (1) Pulse test: p< 50ms 8 < 2% Tolerance on nominal z1 : + 5%. (2) On infinite heatsink : d= 19mm P : Preferred voltages. (3) Measured between 10% and 50% of lzu. Forward voltage drop : Vr <1.2V (Tams = 25C, le = 1A) (4) Rectangular waveform (tp = 10ms}. 2 (57 S6s-THomson RICRORECTROMICS 761N 5333 B 1N 5388 B ELECTRICAL CHARACTERISTICS (continued) Types Variizy* | art tapllzr* rze/lzK In VR VE lau 4aVz lzsm nom. max. max. max. typ. max. max max. Tamp=7iC {) {mA} {Q} 1.0mA (WA) Wy {1040} mA) ) A (i) (4) (i) (Q) (2) (3) (4) P ins53a3B/ 150 8.0 330 1500 a5 | 114 9.5 31.6 3.00 0.81 INs53a48! 160 8.0 350 1650 o5 | 122 a5 29.4 3.00 0.76 1N 6385 B 170 6.0 380 1750 0.5 129 9.5 28 3.00 C71 P iN 5386 B 780 5.0 430 1750 0.5 137 9.5 26.4 4.00 0.87 1N 5387 B 196 5.0 450 1859 0.5 144 95 25 5.00 0.64 P iN 5363 B 200 5.6 480 1855 05 152 10 23,6 5.00 0.60 (1} Pulse test :1p s50ms 68<2% (2) On infinite heatsink : d= 16mm {3} Measured between 10% and 50% of lam. {4} Rectangular waveform {t) = 1Oms}. PACKAGE MECHANICAL DATA CB-417 Plastic Tolerance on nominal Vat : + 5%. P : Preferred voltages. Forward voltage drop : Ve < 1.2V (Tams = 25C, lr = 1A} 25,4 min 8,89 max 25,4 min pO Y, eo) Zed of @ 3,68 mox @ 1,092 mox Cooling method : by convection {method A) Marking : clear, ring at cathode end. Weight : 0.69 iz SGS-THomson 3 SYS imsnonszemmomesiN 5333 B > 1N 5388 B 4h P iW 5 Maunting ni Mounting n@2 5 4 3 2 t ~ Tamb [?) 0 40 ao 20 460 200 Fig.4 - Powar dissipation versus ambient temperature. {ec/W)} 108 10 i t fs) aot io-2 tov! i ig 402 403 Fig.3 - Transient thermal impedance junetion-smbient for mounting m2 versus pulse duration {L = 10 mm}. C {pF} 04 in 5343p 103 {N 53565 s0# YR i} ig 4 id 4100 500 Fig.4 ~ Capacitance versus reverge applied voltage. 78 a0 50 40 20 9 {ecw} 5 10 i5 20 a5 Fig.2 - Thermal resistance versus lead length. Mounting n?4 Mounting n?2 INFINITE HEATSINK PRINTED CIACUIT L < Ny Test point of tconnexion . Soldering 10 40 i Yeu {) sort q i 2 3 4 Fig.S - Peak forward current versus peak forward voltage drop [typical values) . ki S&S-THomson ve MICRSELECTROMICS1N 5333 B 1N 5388 B a i028 103 {ay Ty = 450 C Yq = 0.75 Ver io 402 4 io 4074 i 19-2 Vzr Vat WI 10-3 sort i 40 io? 408 i 40 102 i093 Fig.& - Reverse current versus regulation Fig.7 ~ Differential resistance versus voltage {typical values) . regulation voltage {typical values) . 404 Ty initial = 25 C 408 x02 Vey < 40 ~-- Very > 40 ty tms) ig 4 40 10? Fig.8 - Peak pulse power versus pulse duration (rectangular wave form) (maximum values) . Gy SGS-THOMSON S/S ve scieson eernones 0