(INTERSIL IVN5200/1 TN Series n-Channel Enhancement-mode FEATURES High speed, high current switching inherent current sharing capability when paralleled Directly interfaces to CMOS, DTL, TTL logic Simple, straight-forward DC biasing Extended safe operating area Inherently temperature stable Low ON resistance in smail package ABSOLUTE MAXIMUM RATINGS (Ta = 25C unless otherwise noted) Drain-source Voltage IVN5200TND, IVNS5201TND .............0.0006 40V IVNS5200TNE, IVNS201TNE ................... 60V IVNS5200TNF, IVNS201TNF.... 0... we eee eee 80V Drain-gate Voltage IVNS200TND, IVN5201TND ...............008. 40V IVN5200TNE, IVN5201TNE ................... 60V IVN5200TNF, IVNS5201TNF.......-......00 cee 80V Continuous Drain Current (see note 1) ......... 4.0A Peak Drain Current (see note 2) .............4.. 10A Gate-source Forward Voltage .................. +30V Gate-source Reverse Voltage .............-.005 -30V Thermal Resistance, Junction to Case....... 10C/W Continuous Device Dissipation at (or below) 25C Case Temperature ...............0005- 12.5W Linear Derating Factor ................06. 100mW/C Operating Junction Temperature Range................ 55 to +150C Storage Temperature Range......... . 55 to +150C Lead Temperature (1/16 in. from case for 10 sec) ............. +300C Note 1. Tc = 25C; controlled by typical rpsion) and maximum power dissipation. Note 2. Pulse width 80yusec, duty cycle 1.0%. Note 3. The Drain-source diode is an integral part of the MOSFET structure. 2-27 Vertical Power MOSFET APPLICATIONS e High efficiency switching power supplies Off-line switching regulators High speed, high current switches Line drivers Logic buffers High peak current pulse amplifiers DC motor controllers SCHEMATIC DIAGRAM (OUTLINE DWG. TO-39) DRAIN (see note 3) GATE SOURCE 3 DRAIN 1 GATE SOURCE Body internally connected to source Drain common to case CHIP TOPOGRAPHY . GATE st mil i 400 mil = > -IVN5200/1 TN Series ELECTRICAL CHARACTERISTICS (25C unless otherwise noted), Vas = 0 INWERSIL IVN5200TND IWNS200TNE IVN5200TNF CHARACTERISTICS 1VN5201TND IVN5201TNE INV5201TNF | UNIT TEST CONDITIONS Min [Tye | MAX [ Min | Te | MAX | MIN [ TYP | MAX Drain-Source Breakdown . . 1 v 40 60 = = BYOSS Vottage 80 y Vas = 0, fo = 100uA 2 Gate IVN5200 Series | 0.8 20 | 08 2.0 | 0.8 2.0 r |Vasith! Threshold Vos = Ves. Ip = S5mMA 3 Voltage IVN5201 Series | 0.8 3.6 | 08 36 | 0.8 3.6 L 4 02 [ 20 0.2 { 20 | 0.2 | 20 Ves = 12V, Vos = 0 { Gate-Body Leakage A ra 8 eeeeey 9 100 100 100 |" Vos = 12V, Vos = 0, Ta = +125C 6/7 100 100 100 uA | Vos = Max. Rating, Vas = 0 a| Zero Gate Volt Tla|toss Su Caner, age 5.0 5.0 5.0 | mA | Vos =0.80 Max. Rating, Vas = 0, Ta=*128C 8) T 100 100 100 nA_| Vos = 24V, Ves = 0 BINT ign ON-State IVN5200 Series} 5.0 | 10 5.0} 10 5.0} 10 A Nos = 24V, Vas = 10V AH C | Pn Drain Current JIVN5201 Series. 5.0 | 10 5.0 | 10 5.0 ] 10 Vos = 24V, Vas = 12V 1 - VN52001T ND 15 15 1.5 Vas = 5V, Ip = 2.0A Drain-Si 12 Fa SOU ee NBO TNE te] 25 191 28 | 19 [28 Vas = 10V, Ip = 5.0A Vosion) Saturation Le = v 13 Voltage VN5201TND 1.2 1.2 1.2 Vas = 7V, Ip = 2.0A Note 1 14 9 VN5201TNF 1.8.) 2.5 1.8 2.8 1.8 2.5 Vos = 12V, Ip = .0A ev) 15 Static Drain-_ |yn5200 Series 0.38 | 0.50 0.38 | 0.59 0.38 | 0.50 Vas = 10V tDStan! Source ON 1 > Ip = 5.0A 16 Resistance \VN5201 Series 0.36 | 0.50 0.36 | 0.50 0.36) 050} 9 | Vas = 12v 7 Small-Signal |) VN5200 Series 0.38 | 0.50 0.38 | 0.50 0.38 | 0.50 Vas = 10V tp = 5.08 fasion! Drain-Source > = 8. 18 ON Resistance |!VN5201 Series 0.36 | 0.50 0.36 | 0.50 0.36 | 0.50 Vas = 12V f= 1KHz D 19 y {9s Forward Transconductance 1.04 18 1.0] 1.8 1.0] 18 mho | Vos = 24V, Ip = 5.0A, f = 1KHz [20 Nn | Cise input Capacitance 210 | 250 210 | 250 210 | 250 [24 | A | Coss Output Capacitance 160 | 200 160 | 200 160 | 200 pF | Vos = 24V, Vas = 0,f = 1MHz | (Note 2) [22 M | Crss Reverse Transfer Capacitance 45 60 45 60 45 60 23)! | tation) Turn-ON Delay Time 4 20 4 20 4 {| 20 boa C - = Ip = 4.0A 24| [te Rise Time 4) 20 4 2 4 | 20 | 4s | See Switching Times Test (Note 2) 25 taioft! Turn-OFF Delay Time 4 | 20 4 | 20 41 20 Creat pa mg es fe: 2 26| [tr Fall Time 4 | 20 4 | 20 4 | 20 Pag : Note 1. Pulse test 80usec, 1% duty cycle. Note 2. Sampie test. THERMAL RESPONSE fry EFFECTIVE TRANSIENT THERMAL RESISTANCE (C/W NORMALIZED} S 0.01 0.01 O41 1 10 t, - TIME nsec) TU | DUTY CYCLE, D=t,/t, Note: For other 5200 family characteristic curves, see page 2-43. 2-28 POWER DISSIPATION vs CASE OR AMBIENT TEMPERATURE 1 1 1 Py POWER DISSIPATION (WATTS) 5.0 25 HEAT SINK 0.0 10C 75 5.0 25 AIR 0 +40 +80 +120 +160 +200 J TEMPERATURE (C) DC SAFE OPERATING REGION 1p - DRAIN CURRENT (AMPS) Tc = 25C o1 1.0 10 100 Vps DRAIN-SOURCE VOLTAGE (VOLTS)