2N7002-G (N-Channel)
RoHS Device
MOSFET
QW-BTR12 Page 1
REV:B
Features
Power dissipation : 0.35W
Equivalent Circuit
Dimensions in inches and (millimeter)
SOT-23
D
G
S
0.083(2.10)
0.066(1.70)
0.056(1.40)
0.047(1.20)
0.119(3.00)
0.110(2.80)
0.006(0.15)max
0.020(0.50)
0.013(0.35)
0.044(1.10)
0.035(0.90)
0.007(0.20)min
0.006(0.15)
0.002(0.05)
0.103(2.60)
0.086(2.20)
Symbol
Parameter Value Unit
Drain-Source voltage
Drain current
Power dissipation
Junction and storage temperature
G : Gate
S : Source
D : Drain
VDS
ID
PD
TJ, TSTG
60
250
350
-55 ~ +150
V
mA
mW
°C
Symbol
Parameter Conditions Typ
Max
Unit
Drain-Source breakdown voltage
Gate-Threshold voltage
Gate-body leakage
Zero gate voltage drain current
On-state drain current
Drain-Source on resistance
Forward tran conductance
Diode forward voltage
Total gate charge
Gate-Source charge
Gate-Drain charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
VGS=0V, ID=10μA
VDS=VGS, ID=250μA
VDS=0V, VGS=15V
VDS=60V, VGS=0V
VDS=60V, VGS=0V, TJ=125°C
VGS=10V, VDS=7.5V
VGS=4.5V, VDS=10V
VGS=10V, ID=250mA
VGS=4.5V, ID=200mA
VDS=15V, ID=200mA
IS=200mA, VGS=0V
VDS=30V, VGS=10V, ID=250mA
VDS=25V, VGS=0V, f=1MHz
VDD=30V, RL=200Ω
ID=100mA, VGEN=10V
RG=10Ω
Min
V(BR)DSS
Vth(GS)
IGSS
IDSS
ID(ON)
rDS(ON)
gts
VSD
Qg
Qgs
Qgd
Ciss
COSS
CrSS
td(ON)
tr
td(off)
60
1
800
500
70
1.5
1300
700
1.5
2.0
300
0.85
0.6
0.06
0.06
25
6
1.2
7.5
6
7.5
2.5
10
1
500
3
4
1.2
1.0
20
20
V
nA
μA
mA
Ω
mS
V
nC
pF
nS
G S
D
Comchip Technology CO., LTD.
Maximum Ratings (at TA=25°C)
Electrical Characteristics (at TA=25°C unless otherwise noted)
RATING AND CHARACTERISTIC CURVES (2N7002-G)
Page 2
Fig.1 On-Region Characteristics
0
ID, Drain-Source Current (A)
VDS, Drain-Source Voltage(V)
0 2 5
0.8
Fig.2 On-Resistance vs Drain Current
0
RDS(ON), Normalized
Drain-Source On-Resistance
ID, Drain Current (A)
0 0.2 0.8 1.0
1
2
3
Fig.3 On-Resistance vs Junction Temperature
0
RDS(ON), Normalized Drain-Source
On-Resistance
O
TJ, Junction Temperature ( C)
-55
0.5
2.0
20
1 3 0.4
4
5
VGS = 5.0V
O
T = 25C
J
VGS = 10V
ID= 50mA
ID= 500mA
VGS=10V
9.0V
8.0V
7.0V
6.5V
6.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0/1.0V
5.5V
5.0V
4
0.2
0.4
0.6
1.0
0.6
6
7
Fig.4 On-Resistance vs Gate-Source Voltage
0
RDS(ON), Normalized
Drain-Source On-Resistance
VGS, Gate to Source Voltage (V)
0 4 14 18
1
2
3
8
4
5
12
6
2 166 10
-30 -5 45 120
70 95 145
1.0
1.5
VGS=10V, ID=0.5A
VGS=5V, ID=0.05A
Comchip Technology CO., LTD.
REV:B
QW-BTR12
MOSFET
Comchip Technology CO., LTD.
Page 3
REV:B
BCdD D2
D1
E F P P0P1
SOT-23
SYMBOL
A
W W1
(mm)
(inch) 0.122 0.004±0.112 0.004±0.055 0.004±0.061 0.004±7.008 0.04±1.969 MIN. 0.512 0.008±
SOT-23
SYMBOL
(mm)
(inch) 0.069 0.004±0.138 0.002±0.157 0.004±0.157 0.004±0.079 0.002±0.315 0.012
±0.567 MAX.
3.10 ± 0.10 2.85 ± 0.10
4.00 ± 0.10
1.55 ± 0.10
3.50 ± 0.051.75 ± 0.10
50.0 MIN. 13.0 ± 0.201.40 ± 0.10
4.00 ± 0.10 2.00 ± 0.05 8.00 ± 0.30 14.4 MAX.
178 ± 1
QW-BTR12
MOSFET
Reel Taping Specification
o
120
Trailer Device Leader
10 pitches (min)10 pitches (min)
.......
.......
....... ..............
....... ..............
End Start
D1
D2
D
W1
T
C
Direction of Feed
Index hole
d
E
F
B W
P
P0
P1
A
Comchip Technology CO., LTD.
Page 4
REV:B
Marking Code
7002
3
1 2
Suggested PAD Layout
SIZE
(inch)
0.031
(mm)
0.80
1.90
2.02
0.075
0.080
SOT-23
2.82 0.111
A
B
C
D
QW-BTR12
MOSFET
Part Number
2N7002-G
Marking Code
7002
A
C
B
D
Standard Packaging
Case Type
SOT-23 3,000
REEL
( pcs )
Reel Size
(inch)
7
REEL PACK
