© 2013 IXYS All rights reserved 1 - 4
20130822a
IXBOD2
IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specified
VBO = 400-1400 V
IAVM = 0.9 A
Breakover Diode Gen2
(BOD2)
VBO Standard Types
[V]
400 ±50 IXBOD2-04
500 ±50 IXBOD2-05
600 ±50 IXBOD2-06
700 ±50 IXBOD2-07
800 ±50 IXBOD2-08
900 ±50 IXBOD2-09
1000 ±50 IXBOD2-10
1100 ±50 IXBOD2-11
1200 ±50 IXBOD2-12
1300 ±50 IXBOD2-13
1400 ±50 IXBOD2-14
Features / Advantages:
• Extra fast turn-on
• Very low temperature dependance
Package: FP-Case
• Industry standard outline
• RoHS compliant
• Epoxy meets UL 94V-0
• Soldering pins for PCB mounting
• Base plate: Plastic overmolded tab
• Reduced weight
Applications:
• High voltage circuit protection
• Transient voltage protection
• Trigger device
• Power pulse generators
• Lightning and arcing protection
• Energy discharge circuits
• Battery overvoltage protection
• Solar array protection
Backside: isolated
AK
© 2013 IXYS All rights reserved 2 - 4
20130822a
IXBOD2
IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specified
BOD2 Ratings
Symbol Definitions Conditions min. typ. max.
IDdrain current VD = 0.8·VBO TVJ = 25°C
TVJ = 125°C
10
200
µA
µA
VBO breakover voltage VBO (TVJ) = VBO, 25°C [1 + KT (TVJ - 25°C)] V
IRMS RMS current f = 50 Hz T
amb = 50°C
pins soldered to printed circuit (conductor 0.035x2mm)
1.4 A
IFAVM maximum average forward current 0.9 A
ISM maximum pulsed source current tp = 0.1 ms; non repetitive TVJ = 150°C 250 A
I2tI2t value for fusing tp = 0.1 ms TVJ = 150°C 3.1 A2s
KT
KP
temperature coefficient of VBO
coefficient for energy per pulse EP (material constant)
0.7·10-3
700
K-1
K/Ws
RthJA thermal resistance junction to ambient natural convection
with air speed 2 m/s
60
45
K/W
K/W
IBO breakover current TVJ = 25°C
TVJ = 150°C
15
6
mA
mA
IHholding current TVJ = 25°C
TVJ = 150°C
20
12
mA
mA
VHholding voltage TVJ = 25°C 4 8 V
(dv/dt)cr critical rate of rise of voltage VD = 0.9·VBO TVJ = 25°C
TVJ = 150°C
3000
1000
V/µs
V/µs
(di/dt)cr critical rate of rise of curent IT = 100 A; VD = VBO; f = 50 Hz TVJ = 150°C
IT = 600 A; non repetitive
200
500
A/µs
A/µs
tqturn-off time VD = 0.75·VBO; VR = 0 V; IT = 100 A TVJ = 125°C
dv/dt(lin.) = 5000 V/µs; di/dt = -500 A/µs
200 µs
VTforward voltage drop IT = 10 A TVJ = 125°C
TVJ = 150°C
1.3
1.2
V
V
VT0
rT
threshold voltage
slope resistance for power-loss calculation only TVJ = 150°C 0.75
0.05
V
W
Vd
68 kW400 nH
IXBOD
100 nF
It = 400 A, di/dt = 2000 A/µs
© 2013 IXYS All rights reserved 3 - 4
20130822a
IXBOD2
IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specified
Package FP-Case Ratings
Symbol Definitions Conditions min. typ. max.
Tamb
Tstg
TVJM
ambient temperature (cooling medium)
storage temperature
maximum virtual junction temperature
-40
-40
-40
150
150
150
°C
°C
°C
Weight 0.9 g
D
ate Code
Part No.
Logo
Product Marking
yywwA
Assembly
line
K A
Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code
Standard IXBOD2-04 IXBOD2-04 Box 100 511174
Standard IXBOD2-05 IXBOD2-05 Box 100 tbd
Standard IXBOD2-06 IXBOD2-06 Box 100 tbd
Standard IXBOD2-07 IXBOD2-07 Box 100 508425
Standard IXBOD2-08 IXBOD2-08 Box 100 507602
Standard IXBOD2-09 IXBOD2-09 Box 100 511668
Standard IXBOD2-10 IXBOD2-10 Box 100 508078
Standard IXBOD2-11 IXBOD2-11 Box 100 511860
Standard IXBOD2-12 IXBOD2-12 Box 100 511675
Standard IXBOD2-13 IXBOD2-13 Box 100 511682
Standard IXBOD2-14 IXBOD2-14 Box 100 509782
© 2013 IXYS All rights reserved 4 - 4
20130822a
IXBOD2
IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specified
Outlines FP-case
10
911.5
0.8 0.5
4
1
1.5
1.5
7.5
1.2
A K
Dimensions in mm
(1 mm = 0.0394“)
