Vishay Siliconix
SUP/SUB85N10-10
Document Number: 71141
S-61008–Rev. D, 12-Jun-06
www.vishay.com
1
N-Channel 100-V (D-S) 175 °C MOSFET
FEATURES
•TrenchFET
® Power MOSFET
• 175 °C Maximum Junction Temperature
PRODUCT SUMMARY
V(BR)DSS (V) rDS(on) (Ω)ID (A)
100 0.0105 at VGS = 10 V
85a
0.012 at VGS = 4.5 V
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve fo voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ORDERING INFORMATION
Package Tin/Lead Plated Lead (Pb)-free
TO-220AB SUP85N10-10 SUP85N10-10-E3
TO-263 SUB85N10-10 SUB85N10-10-E3
TO-220AB
Top View
GDS
DRAIN connected to TAB
TO-263
SDG
Top View
SUP85N10-10
SUB85N10-10 N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID85a
A
TC = 125 °C 60a
Pulsed Drain Current IDM 240
Avalanche Current L = 0.1 mH IAS 75
Single Pulse Avalanche EnergybEAS 280 mJ
Maximum Power Dissipationb TC = 25 °C (TO-220AB and TO-263) PD250c
W
TA = 25 °C (TO-263)d3.75
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient PCB Mount (TO-263)d
RthJA
40
°C/W
Free Air (TO-220AB) 62.5
Junction-to-Case RthJC 0.6
Available
RoHS*
COMPLIANT
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Document Number: 71141
S-61008–Rev. D, 12-Jun-06
Vishay Siliconix
SUP/SUB85N10-10
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 µA 100 V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 13
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 100 V, VGS = 0 V 1
µA
VDS = 100 V, VGS = 0 V, TJ = 125 °C 50
VDS = 100 V, VGS = 0 V, TJ = 175 °C 250
On-State Drain CurrentaID(on) VDS = ≥ 5 V, VGS = 10 V 120 A
Drain-Source On-State ResistancearDS(on)
VGS = 10 V, ID = 30 A 0.0085 0.0105
Ω
VGS = 4.5 V, ID = 20 A 0.010 0.0012
VGS = 10 V, ID = 30 A, TJ = 125 °C 0.017
VGS = 10 V, ID = 30 A, TJ = 175 °C 0.022
Forward Transconductanceagfs VDS = 15 V, ID = 30 A 25 S
Dynamicb
Input Capacitance Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz
6550
pFOutput Capacitance Coss 665
Reverse Transfer Capacitance Crss 265
Total Gate ChargecQg
VDS = 50 V, VGS = 10 V, ID = 85 A
105 160
nC
Gate-Source ChargecQgs 17
Gate-Drain ChargecQgd 23
Tur n - O n D e l ay Timectd(on)
VDD = 50 V, RL = 0.6 Ω
ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω
12 25
ns
Rise Timectr90 135
Turn-Off DelayTimectd(off) 55 85
Fall Timectf130 195
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b
Continuous Current IS85 A
Pulsed Current ISM 240
Forward VoltageaVSD IF = 85 A, VGS = 0 V 1.0 1.5 V
Reverse Recovery Time trr
IF = 50 A, di/dt = 100 A/µs
85 140 ns
Peak Reverse Recovery Current IRM(REC) 4.5 7 A
Reverse Recovery Charge Qrr 0.17 0.35 µC
Document Number: 71141
S-61008–Rev. D, 12-Jun-06
www.vishay.com
3
Vishay Siliconix
SUP/SUB85N10-10
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
Output Characteristics
Transconductance
Capacitance
0
50
100
150
200
250
0246810
VDS − Drain-to-Source Voltage (V)
3 V
VGS = 10 thru 6 V
4 V
−)A( tnerruC niarD I D
5 V
0
50
100
150
200
250
0 20406080 100
−)S( ecnat
cudno
csnarT g sf
TC = - 55 °C
25 °C
125 °C
ID− Drain Current (A)
0
2000
4000
6000
8000
10000
01530456075
V
DS
− Drain-to-Source Voltage (V)
C− )Fp( ecnaticapaC
C
iss
C
oss
C
rss
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
50
100
150
200
0123456
VGS
− Gate-to-Source Voltage (V)
−)A( tnerruC niarD I
D
25 °C
- 55 °C
TC = 125 °C
0.000
0.005
0.010
0.015
0.020
0204060
80 100 120
ID− Drain Current (A)
VGS = 10 V
VGS = 4.5 V
−(Ω) ecnatsi
s
eR-n
O
r )no(SD
0
4
8
12
16
20
0 50 100 150 200
−)
V( ega
tloV ec
ru
o
S
-ot
-etaG
Q
g
− Total Gate Charge (nC)
V
SG
V
DS
= 50 V
I
D
= 85 A
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Document Number: 71141
S-61008–Rev. D, 12-Jun-06
Vishay Siliconix
SUP/SUB85N10-10
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
On-Resistance vs. Junction Temperature
Avalanche Current vs. Time
0.0
0.5
1.0
1.5
2.0
2.5
- 50 - 25 0 25 50 75 100 125 150 175
TJ− Junction Temperature (°C)
VGS = 10 V
ID = 30 A
r)no(SD −ecnatsiseR-nO
)dezilamroN(
tin (Sec)
1000
10
0.00001 0.001 0.1 1
0.1
)
a
(
IvaD
0.01
IAV (A) at TA= 150 °C
100
1
0.0001
IAV (A) at TA= 25 °C
Source-Drain Diode Forward Voltage
TJ - Drain-Source Breakdown
vs. Junction-Temperature
VSD
− Source-to-Drain Voltage (V)
−)A( tnerruC ecruoS I
S
100
10
1
0.3 0.6 0.9 1.2
TJ= 25 °C
TJ= 150 °C
0
90
100
110
120
130
140
- 50 - 25 0 25 50 75 100 125 150 175
TJ− Junction Temperature (°C)
)V(VSSD)RB(
ID = 250 µA
Document Number: 71141
S-61008–Rev. D, 12-Jun-06
www.vishay.com
5
Vishay Siliconix
SUP/SUB85N10-10
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?71141.
Maximum Avalanche and Drain Current
vs. Case Temterature
0
20
40
60
80
100
0 25 50 75 100 125 150 175
TC− Ambient Temperature (°C)
−)A( tnerruC niarD I D
Safe Operating Area
1000
10
0.1 1 10 1000
*Limited
by rDS(on)
0.1
100
TC = 25 °C
Single Pulse
−)A( tnerruC niarD I D
1 ms
10 ms
100 ms
dc
10 µs
100
1
100
VDS − Drain-to-Source Voltage (V)
*VGS minimum VGS at which rDS
(
on
)
is specified
µs
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10-4 10-3 10-2 10-1 1
e
v
i
tceff
E
dez
ilamroNtne
isna
rT
ecnadep
m
I lamrehT
10
0.2
0.1
Duty Cycle = 0.5
Single Pulse
0.05
0.02
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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