ULN2803AFWG5ELM - TOSHIBA - Datasheet.Global

TLP521−1,TLP521−2,TLP521−4

2007-10-01

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP521−1,TLP521−2,TLP521−4

Programmable Controllers

AC/DC−Input Module

Solid State Relay

The TOSHIBA TLP521−1, −2 and −4 consist of a photo−transistor

optically coupled to a gallium arsenide infrared emitting diode.

The TLP521−2 offers two isolated channels in an eight lead plastic DIP

package, while the TLP521−4 provides four isolated channels in a

sixteen plastic DIP package.

• Collector−emitter voltage: 55 V (min)

• Current transfer ratio: 50% (min)

Rank GB: 100% (min)

• Isolation voltage: 2500 Vrms (min)

• UL recognized

made in Japan: UL1577, file No. E67349

made in Thailand: UL1577, file No. E152349

Pin Configurations (top view)

1, 3 : Anode

2, 4 : Cathode

5, 7 : Emitter

6, 8 : Collector

TLP521-2

2 7

4 5

1, 3, 5, 7

2, 4, 6, 8

9, 11, 13, 15

10, 12, 14, 16

: Anode

: Cathode

: Emitter

: Collector

TLP521-4

611

215

413

TLP521-1

2 3

1 : Anode

2 : Cathode

3 : Emitter

4 : Collector

TOSHIBA 11−5B2

Weight: 0.26 g (typ.)

TOSHIBA 11−10C4

Weight: 0.54 g (typ.)

TOSHIBA 11−20A3

Weight: 1.1 g (typ.)

Unit in mm

TLP521−1,TLP521−2,TLP521−4

2007-10-01

Absolute Maximum Ratings (Ta = 25°C)

Rating

Characteristic Symbol

TLP521−1 TLP521−2

TLP521−4

Unit

Forward current IF 70 50 mA

Forward current derating ΔIF /°C −0.93 (Ta ≥ 50°C) −0.5 (Ta ≥ 25°C) mA /°C

Pulse forward current IFP 1 (100μ pulse, 100pps) A

Reverse voltage VR 5 V

LED

Junction temperature Tj 125 °C

Collector−emitter voltage VCEO 55 V

Emitter−collector voltage VECO 7 V

Collector current IC 50 mA

Collector power dissipation

(1 circuit) PC 150 100 mW

Collector power dissipation

derating (1 circuit Ta ≥ 25°C) ΔPC /°C −1.5 −1.0 mW /°C

Detector

Junction temperature Tj 125 °C

Storage temperature range Tstg −55~125 °C

Operating temperature range Topr −55~100 °C

Lead soldering temperature Tsol 260 (10 s) °C

Total package power dissipation PT 250 150 mW

Total package power dissipation

derating (Ta ≥ 25°C) ΔPT /°C −2.5 −1.5 mW /°C

Isolation voltage BVS 2500 (AC, 1min., R.H.≤ 60%) (Note 1) Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted

together.

Recommended Operating Conditions

Characteristic Symbol Min Typ. Max Unit

Supply voltage VCC ― 5 24 V

Forward current IF ― 16 25 mA

Collector current IC ― 1 10 mA

Operating temperature Topr −25

― 85 °C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this

product, please confirm specified characteristics shown in this document.

TLP521−1,TLP521−2,TLP521−4

2007-10-01

Current Transfer Ratio (%)

(IC / IF)

IF = 5mA, VCE = 5V, Ta = 25°C

Type Classi−

fication (*1)

Min Max

Marking Of

Classification

A 50 600 Blank, Y, Y■, G, G■, B, B■, GB

Rank Y 50 150 Y, Y■

Rank GR 100 300 G, G■

Rank BL 200 600 B, B■

TLP521

Rank GB 100 600 G, G■, B, B■, GB

A 50 600 Blank, GR, BL, GB

TLP521−2

TLP521−4 Rank GB 100 600 GR, BL, GB

*1: Ex. rank GB: TLP521−1 (GB)

(Note): Application type name for certification test, please use standard product type name, i.e.

TLP521−1 (GB): TLP521−1, TLP521−2 (GB): TLP521−2

TLP521−1,TLP521−2,TLP521−4

2007-10-01

Individual Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Forward voltage VF I

F = 10 mA 1.0 1.15 1.3 V

Reverse current IR V

R = 5 V — — 10 μA

LED

Capacitance CT V = 0, f = 1 MHz — 30 — pF

Collector−emitter

breakdown voltage V(BR) CEO I

C = 0.5 mA 55 — — V

Emitter−collector

breakdown voltage V(BR) ECO I

E = 0.1 mA 7 — — V

VCE = 24 V — 10 100 nA

Collector dark current ICEO

VCE = 24 V, Ta = 85°C — 2 50 μA

Detector

Capacitance

(collector to emitter) CCE V = 0, f = 1 MHz — 10 — pF

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition MIn Typ. Max Unit

50 — 600

Current transfer ratio IC / IF IF = 5 mA, VCE = 5 V

Rank GB 100 — 600

— 60 —

Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V

Rank GB 30 — —

IC = 2.4 mA, IF = 8 mA — — 0.4

— 0.2 —

Collector−emitter

saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA

Rank GB — — 0.4

Isolation Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Capacitance

(input to output) CS VS = 0, f = 1 MHz — 0.8 — pF

Isolation resistance RS VS = 500 V, R.H.≤ 60% — 1011 — Ω

AC, 1 minute 2500 — —

AC, 1 second, in oil — 5000 —

Vrms

Isolation voltage BVS

DC, 1 minute, in oil — 5000 — Vdc

TLP521−1,TLP521−2,TLP521−4

2007-10-01

Switching Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Rise time tr — 2 —

Fall time tf — 3 —

Turn−on time ton — 3 —

Turn−off time toff

VCC = 10 V

IC = 2 mA

RL = 100Ω

— 3 —

μs

Turn−on time tON — 2 —

Storage time ts — 15 —

Turn−off time tOFF

RL = 1.9 kΩ (Fig.1)

VCC = 5 V, IF = 16 mA

— 25 —

μs

VCE

VCC

tON

4.5V

0.5V

tOFF

VCC

VCE

Fig.1 : SWITCHING TIME TEST CIRCUIT

TLP521−1,TLP521−2,TLP521−4

2007-10-01

Ambient temperature Ta (°C)

IF – Ta

Allowable forward current

F (mA)

100

-20

100

80 60

20 40 0

TLP521-1

Ambient temperature Ta (°C)

IF – Ta

Allowable forward current

F (mA)

TLP521-2

TLP521-4

100

-20

100

80 60

20 40

Ambient temperature Ta (°C)

PC – Ta

Allowable collector power

dissipation PC (mW)

240

160

-20

120

100

80 60

20 40 0

200

TLP521-1

IFP – DR

Allowable pulse forward

current IFP (mA)

Duty cycle ratio DR

3000

3 3

10-3 3

1000

500

100

300

10-1 10-2 3 100

Pulse width ≤ 100μs

Ta = 2 5 °C

TLP521-1

PC – Ta

Allowable collector power

dissipation PC (mW)

120

-20

100

80 60

20 40 0

100

TLP521-2

TLP521-4

Ambient temperature Ta (°C)

IFP – DR

Allowable pulse forward

current IFP (mA)

Duty cycle ratio DR

3000

3 3

10-3 3

1000

500

100

300

10-1 10-2 3 100

Pulse width ≤ 100μs

Ta = 2 5 °C

TLP521-2

TLP521-4

TLP521−1,TLP521−2,TLP521−4

2007-10-01

Forward voltage VF (V)

IF – VF

Forward current IF (mA)

100

0.4

0.3

0.5

0.1

0.6 0.8 1.0

1.2 1.4 1.6

Ta=2 5 °C

Forward voltage temperature

coefficient ΔVF/ΔTa (mV/°C)

ΔVF/ΔTa – I

Forward current IF (mA)

0.1

-2.0

-2.4

-2.8

-0.4

0.3

-1.6

-1.2

-0.8

1 3 10 30

IFP – VFP

Pulse forward current IFP (mA)

Pulse forward voltage VFP (V)

1000

500

300

100

1 0.4 0.8 1.2 1.6 2.0 2.4

Pulse width ≤10μs

Repetitive frequency =100Hz

Ta = 25°C

ICEO – Ta

Ambient tem

erature Ta

(

℃

)

101

100

10-1

160

120

10-2

10-3

10-4

10V

VCE=24V

Collector dark current ICEO (μA)

Collector-emitter voltage VCE (V)

Collector current IC (mA)

IC – VCE

1.0 0.8 0.4 0.6 0.2

1.2 1.4

Ta=2 5 °C

50mA

10mA

20mA

5mA

IF=2mA

30mA

40mA

Collector-emitter voltage VCE (V)

Collector current IC (mA)

IC – VCE

50mA

10mA

20mA

15mA

PC(MAX.)

IF=5mA

30mA

10 8

4 6

0 2

Ta=2 5 °C

TLP521−1,TLP521−2,TLP521−4

2007-10-01

Ambient temperature Ta (℃)

Collector current IC (mA)

IC – Ta

80 60

20 40 0 -20

0.3

0.1

100

IF = 0.5mA

0.5

1mA

5mA

10mA

25mA VCE = 5V

IC/IF – IF

Current transfer ratio

C /IF (%)

Forward current IF (mA)

Ta = 25°C

VCE=5V

VCE=0.4V

500

300

0.3

100

10 30 100 3

Sample A

Sample B

Ambient temperature Ta (℃)

Collector-emitter saturation

voltage VCE(sat) (V)

VCE(sat) – Ta

100 80 60

20 40 0 -20

0.20

0.16

0.12

0.08

0.04

IF = 5mA

IC = 1mA

IC – IF

Collector current IC (mA)

Forward current IF (mA)

100

0.3

0.5

0.1

0.3 1 3 10 30 100

0.05

0.03

Ta = 25°C

VCE=5V

VCE=0.4V

Sam

le A

Sam

le B

RL – Switching Time

Switching time (μs)

Load resistance RL (kΩ)

1000

500

300

100

3 10

30 100

300

Ta = 25°C

IF = 16mA

VCC= 5V

tON

tOFF

TLP521−1,TLP521−2,TLP521−4

2007-10-01

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in this document, and related hardware, software and systems (collectively “Product”) without notice.

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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must

also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,

the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA

Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are

solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the

appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any

information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other

referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA A SSUMES NO

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• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring

equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.

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