2N3055AG - ON Semiconductor - Datasheet.Global

April, 2006 − Rev. 6 1Publication Order Number:

2N3055A/D

2N3055A (NPN),

MJ15015 (NPN),

MJ15016 (PNP)

MJ15015 and MJ15016 are Preferred Devices

Complementary Silicon

High−Power Transistors

These PowerBaset complementary transistors are designed for

high power audio, stepping motor and other linear applications. These

devices can also be used in power switching circuits such as relay or

solenoid drivers, dc−to−dc converters, inverters, or for inductive loads

requiring higher safe operating area than the 2N3055.

Features

•Current−Gain − Bandwidth−Product @ IC = 1.0 Adc

fT= 0.8 MHz (Min) − NPN

= 2.2 MHz (Min) − PNP

•Safe Operating Area − Rated to 60 V and 120 V, Respectively

•Pb−Free Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating Symbol Value Unit

Collector−Emitter Voltage 2N3055A

MJ15015, MJ15016

VCEO 60

120

Vdc

Collector−Base Voltage 2N3055A

MJ15015, MJ15016

VCBO 100

200

Vdc

Collector−Emitter Voltage Base

Reversed Biased 2N3055A

MJ15015, MJ15016

VCEV 100

200

Vdc

Emitter−Base Voltage VEBO 7.0 Vdc

Collector Current − Continuous IC15 Adc

Base Current IB7.0 Adc

Total Device Dissipation @ TC = 25_C

Derate above 25_C 2N3055A

Total Device Dissipation @ TC = 25_C

Derate above 25_CMJ15015, MJ15016

PD115

0.65

180

1.03

W

W/_C

Operating and Storage Junction

Temperature Range TJ, Tstg −65 to +200 _C

THERMAL CHARACTERISTICS

Characteristics Symbol Max Max Unit

Thermal Resistance, Junction−to−Case RqJC 1.52 0.98 _C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC Registered Data. (2N3055A)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

15 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60, 120 VOLTS − 115, 180 WATT

S

http://onsemi.com

MARKING DIAGRAMS

2N3055AG

AYWW

MEX

TO−204AA (TO−3)

CASE 1−07

STYLE 1

2N3055A = Device Code

MJ1501x = Device Code

x = 5 or 6

G = Pb−Free Package

A = Assembly Location

Y = Year

WW = Work Week

MEX = Country of Origin

Preferred devices are recommended choices for future use

and best overall value.

MJ1501xG

AYWW

MEX

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)

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2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note 3) 2N3055A

(IC = 200 mAdc, IB = 0) MJ15015, MJ15016

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

60

120

ÎÎÎ

Î

ÎÎÎ

−

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 30 Vdc, VBE(off) = 0 Vdc) 2N3055A

(VCE = 60 Vdc, VBE(off) = 0 Vdc) MJ15015, MJ15016

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICEO

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

−

ÎÎÎ

Î

ÎÎÎ

0.7

0.1

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (Note 3) 2N3055A

(VCEV = Rated Value, VBE(off) = 1.5 Vdc) MJ15015, MJ15016

ÎÎÎÎÎ

ICEV

ÎÎÎÎ

−

ÎÎÎ

5.0

1.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, 2N3055A

TC = 150_C) MJ15015, MJ15016

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICEV

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

−

ÎÎÎ

Î

ÎÎÎ

30

6.0

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

Emitter Cutoff Current 2N3055A

(VEB = 7.0 Vdc, IC = 0) MJ15015, MJ15016

ÎÎÎÎÎ

Î

ÎÎÎ

Î

IEBO

ÎÎÎÎ

Î

ÎÎ

Î

−

ÎÎÎ

Î

5.0

0.2

ÎÎÎÎ

Î

ÎÎ

Î

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN (Note 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with Base Forward Biased

(t = 0.5 s non−repetitive) 2N3055A

(VCE = 60 Vdc) MJ15015, MJ15016

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

IS/b

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.95

3.0

ÎÎÎ

Î

ÎÎÎ

−

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (Note 2 and 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 4.0 Adc, VCE = 2.0 Vdc)

(IC = 4.0 Adc, VCE = 4.0 Vdc)

(IC = 10 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

hFE

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

10

20

5.0

ÎÎÎ

Î

ÎÎÎ

70

−

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 400 mAdc)

(IC = 10 Adc, IB = 3.3 Adc)

(IC = 15 Adc, IB = 7.0 Adc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCE(sat)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

−

ÎÎÎ

Î

ÎÎÎ

1.1

3.0

5.0

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter On Voltage

(IC = 4.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VBE(on)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

0.7

ÎÎÎ

Î

ÎÎÎ

1.8

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS (Note 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current−Gain − Bandwidth Product 2N3055A, MJ15015

(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) MJ15016

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

fT

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

0.8

2.2

ÎÎÎ

Î

ÎÎÎ

6.0

18

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

Cob

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

60

ÎÎÎ

Î

ÎÎÎ

600

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS (2N3055A only) (Note 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

RESISTIVE LOAD

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Delay Time

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

(VCC = 30 Vdc, IC = 4.0 Adc,

IB1 = IB2 = 0.4 Adc,

tp = 25 ms Duty Cycle v 2%

ÎÎÎÎÎ

td

ÎÎÎÎ

−

ÎÎÎ

0.5

ÎÎÎÎ

ms

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎ

tr

ÎÎÎÎ

−

ÎÎÎ

4.0

ÎÎÎÎ

ms

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎ

ts

ÎÎÎÎ

−

ÎÎÎ

3.0

ÎÎÎÎ

ms

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎ

tf

ÎÎÎÎ

−

ÎÎÎ

6.0

ÎÎÎÎ

ms

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.

3. Indicates JEDEC Registered Data. (2N3055A)

2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)

http://onsemi.com

3

200

00 25 50 75 100 125 150 175 200

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

MJ15015

MJ15016

P , AVERAGE POWER DISSIPATION (W)

D(AV)

150

100

50 2N3055A

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS

)

Figure 2. DC Current Gain

200

0.2

IC, COLLECTOR CURRENT (AMP)

20.3 0.5 0.7 1 2 3 5 7 15

70

30

10

5

100

50

hFE, DC CURRENT GAIN

TJ = 150°C

25°C

−55 °C

VCE = 4.0 V

20

7

3

10

Figure 3. Collector Saturation Region

2.8

0.005

IB, BASE CURRENT (AMP)

00.01 0.02 0.05 0.1 0.2 0.5 1 2 5

2

1.6

0.8

0.4

IC = 1 A

TJ = 25°C

4 A

2.4

1.2

8 A

f, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

T

3.5

0.2

IC, COLLECTOR CURRENT (AMP)

0.3 0.5 0.7 1 2 3 5 7 20

2.5

1.5

1

0.5

0

TC = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)

Figure 4. “On” Voltages

3

2

10

VBE(on) @ VCE = 4 V

10

0.1

IC, COLLECTOR CURRENT (AMPS)

0.2 0.3 0.5 1.0 2.0

5.0

2.0

1.0

MJ15016

Figure 5. Current−Gain — Bandwidth Product

2N3055A

MJ15015

2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)

http://onsemi.com

4

Figure 6. Switching Times Test Circuit

(Circuit shown is for NPN)

+13 V

25 ms

0

−11 V

30

W

−5 V

1N6073

SCOPE

VCC

+30 V

7.5 W

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

10

0.2

Figure 7. Turn−On Time

IC, COLLECTOR CURRENT (AMP)

t, TIME (s)μ

7

5

3

2

1

0.7

0.5

0.1 0.3 0.5 0.7 1 2 3 7 15

VCC = 30 V

IC/IB = 10

TJ = 25°C

0.3

0.2

510

tr

td

10

0.2

Figure 8. Turn−Off Times

IC, COLLECTOR CURRENT (AMPS)

7

5

3

2

0.1

0.5

0.1 0.3 0.5 0.7 1 3 5 15

VCC = 30

IC/IB = 10

IB1 = IB2

TJ = 25°C

0.3

t, TIME (s)μ

tf

ts

2

0.7

0.2

710

400

1.0

Figure 9. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

20 20 50 100 200 500 10002.0 5.0 10

C, CAPACITANCE (pF)

200

100

50

30

TJ = 25°C

Cib

Cob

2N3055A

MJ15015

MJ15016

2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)

http://onsemi.com

5

COLLECTOR CUT−OFF REGION

10,000

+0.2

Figure 10. 2N3055A, MJ15015

VBE, BASE−EMITTER VOLTAGE (VOLTS)

1000

100

10

1.0

, COLLECTOR CURRENT (A)μIC

0.1

0.01 +0.1 0 −0.1 −0.2 −0.3 −0.4 −0.5

VCE = 30 V

TJ = 150°C

100°C

25°C

REVERSE FORWARD

IC = ICES

NPN

1000

−0.2

Figure 11. MJ15016

VBE, BASE−EMITTER VOLTAGE (VOLTS)

100

10

1.0

0.1

, COLLECTOR CURRENT (A)μIC

0.01

0.001 −0.1 0 +0.1 +0.2 +0.3

VCE = 30 V

TJ = 150°C

100°C

25°C

REVERSE FORWARD

IC = ICES

PNP

+0.4 +0.5

20

Figure 12. Forward Bias Safe Operating Area

2N3055A

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

10

5

110 20 10060

2

IC, COLLECTOR CURRENT (AMPS)

dc

30 ms

1 ms

100 ms

20

Figure 13. Forward Bias Safe Operating Area

MJ15015, MJ15016

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

10

5.0

0.215 20 10060

2.0

IC, COLLECTOR CURRENT (AMP)

dc

0.1ms

100ms

BONDING WIRE LIMIT

THERMAL LIMIT @ TC = 25°C

(SINGLE PULSE)

SECOND BREAKDOWN LIMIT

1.0

0.5

30 120

1.0ms

BONDING WIRE LIMIT

THERMAL LIMIT @ TC = 25°C

(SINGLE PULSE)

SECOND BREAKDOWN LIMIT

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe Operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figures 12 and 13 is based on TC = 25_C;

TJ(pk) is variable depending on power level. Second

breakdown pulse limits are valid for duty cycles to 10% but

must be derated for temperature according to Figure 1.

ORDERING INFORMATION

Device Package Shipping

2N3055A TO−204 100 Units / Tray

2N3055AG TO−204

(Pb−Free)

MJ15015 TO−204

100 Units / Tray

MJ15015G TO−204

(Pb−Free)

MJ15016 TO−204

MJ15016G TO−204

(Pb−Free)

2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)

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6

PACKAGE DIMENSIONS

TO−204 (TO−3)

CASE 1−07

ISSUE Z

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO−204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B−−− 1.050 −−− 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N−−− 0.830 −−− 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

A

N

E

C

K

−T− SEATING

PLANE

2 PLD

M

Q

M

0.13 (0.005) Y M

T

M

Y

M

0.13 (0.005) T

−Q−

−Y−

2

1

UL

GB

V

H

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

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