MMDT4401
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
·Case: SOT-363
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminals: Solderable per MIL-STD-202, Method 208
·Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 6, on Page 2
·Terminal Connections: See Diagram
·Marking (See Page 2): K2X
·Ordering & Date Code Information: See Page 2
·Weight: 0.006 grams (approx.)
DS30111 Rev. 8 - 2 1 of 4 MMDT4401
www.diodes.com ã Diodes Incorporated
·Epitaxial Planar Die Construction
·Ideal for Low Power Amplification and Switching
·Ultra-Small Surface Mount Package
·Available in Lead Free/RoHS Compliant Version
(Note 3)
Maximum Ratings @ TA= 25°C unless otherwise specified
Mechanical Data
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current - Continuous (Note 1) IC600 mA
Power Dissipation (Note 1, 2) Pd200 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 625 °C/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
A
BC
JD
H
K
F
M
L
C2B1E1
E2
E2
B2
B2
C1
C1
C2B1E1
SOT-363
Dim Min Max
A0.10 0.30
B1.15 1.35
C2.00 2.20
D0.65 Nominal
F0.30 0.40
H1.80 2.20
J¾0.10
K0.90 1.00
L0.25 0.40
M0.10 0.25
a0°8°
All Dimensions in mm
Features
SPICE MODEL: MMDT4401
DS30111 Rev. 8 - 2 2 of 4 MMDT4401
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Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage V(BR)CBO 60 ¾VIC= 100mA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾VIC= 1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾VIE = 100mA, IC = 0
Collector Cutoff Current ICEX ¾100 nA VCE = 35V, VEB(OFF) = 0.4V
Base Cutoff Current IBL ¾100 nA VCE = 35V, VEB(OFF) = 0.4V
ON CHARACTERISTICS (Note 4)
DC Current Gain hFE
20
40
80
100
40
¾
¾
¾
300
¾
¾
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 2.0V
Collector-Emitter Saturation Voltage VCE(SAT) ¾0.40
0.75 VIC= 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage VBE(SAT) 0.75
¾
0.95
1.2 VIC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Ccb ¾6.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance Ceb ¾30 pF VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 1.0 15 kW
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio hre 0.1 8.0 x 10-4
Small Signal Current Gain hfe 40 500 ¾
Output Admittance hoe 1.0 30 mS
Current Gain-Bandwidth Product fT250 ¾MHz VCE = 10V, IC = 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time td¾15 ns VCC = 30V, IC = 150mA,
VBE(off) = 2.0V, IB1 = 15mA
Rise Time tr¾20 ns
Storage Time ts¾225 ns VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Fall Time tf¾30 ns
Ordering Information (Note 5)
Device Packaging Shipping
MMDT4401-7 SOT-363 3000/Tape & Reel
Notes: 4. Short duration pulse test used to minimize self-heating effect.
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
6. For Lead Free/RoHS Compliant Version part number, please add "-F" suffix to the part number above. Example: MMDT4401-7-F.
Marking Information
K2X YM
K2X YM
K2X = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Code JKLMNPR
ST U VW
DS30111 Rev. 7 - 2 3 of 4 MMDT4401
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0
50
100
25 50 75 100 125 150 175 200
P,P
O
WER DISSIPATI
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1 Max Power Dissipation vs
Ambient Temperature
150
200
250
300
01
10
1000
100
0.1 110 1000
100
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
C
Fig. 2 Typical DC Current Gain vs
Collector Current
T = -25°C
A
T = +25°C
A
T = 125°C
A
V = 1.0V
CE
0.001 0.01 110
0.1 100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I , BASE CURRENT (mA)
B
Fi
g
. 4 T
yp
ical Collector Saturation Re
g
ion
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
I = 1mA
CI = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
1.0
5.0
20
10
30
0.1 101.0 50
CAPACITANCE (pF)
REVERSE VOLTS (V)
Fig. 3 Typical Capacitance
Cobo
Cibo
110 100 1000
V,C
O
LLECT
O
RT
O
EMITTER
CE(SAT)
SATURATION VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Collector Emitter Saturation Voltage
vs. Collector Current
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
IC
IB
=10
1
0.1 10 100
V , BASE EMITTER V
O
LTAGE (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Base Emitter Voltage vs. Collector Current
0.2
0.3
0.4
0.6
0.5
0.8
0.7
1.0
0.9 V= 5V
CE
T = 25°C
A
T = -50°C
A
T = 150°C
A
DS30111 Rev. 8 - 2 4 of 4 MMDT4401
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1
10
100
1000
110100
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 7 Gain Bandwidth Product vs. Collector Current
f , GAIN BANDWIDTH PRODUCT (MHz)
T
V= 5V
CE
