wee A DEB PIGYL42 Ooosio4s 3 IRF320/321/322/323 - FEATURES Low Rpsion) improved inductive ruggedness Fast switching times . Rugged polysilicon gate cell structure Low input capacitance , Extended safe operating area Improved high temperature reliability TO-3 package (Standard) PRODUCT SUMMARY 980,05 10s OT SEY | " 'N-CHANNEL POWER MOSFETS TO-3 Part Number Vos Rosion) i) D IRF320 . 400V 1.82 3.0A IAFS21 350v | 1.89 3.0A IRFs22.- | goov | 250 | 2.58 Gg . s IRF323 350V 2.60 2.5A MAXIMUM RATINGS ~ Characteristic Symbol IRF320 IRF321 IRF322 IRF323 Unit Drain-Source Voltage (1) Voss 400 350 400 350 Vde Drain-Gate Voltage (Ras=1.0M2Q) (1) Vocr 400 350 400 350 Vde Gate-Source Voltage . Ves . +20 Vde Continuous Drain Current Tc=25C * lp _ 3.0 3.0 2.6 2.5 Adc Continuous Drain Current Te=100C * Ip 2.0 2.0 1.6 1.5 Ade Drain CurrentPulsed (3) lpm 12 12 10 10 Adc Gate Current~Pulsed lem 1.5 Ade Tota! Power Dissipation @ Tc=25C Pp 40 Watts Derate above 25C 0.32 - wie Operating and Storage dunction Temperature Range Ts, Tstg 58 to 150 Cc Maximum Lead Temp. for Soldering , Purposes, 1/8 from case for 5 seconds Tt 300 C Notes: (1) Tj=25C to 150C (2) Puise test: Pulse width<300us, Duty Cycle<2% te (3) Repetitive rating: Pulse width limited by max. Junction temperature cee SAMSUNG SEMICONDUCTOR 108 | | | | |om a DED feab4Lu2 OOOSEIO O Bf OWANNEL 4 7964142 SAMSUNG SEMICONDUCTOR _INC 98D 05110_ D T-24-1 , ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise specified) Characteristic Symbol} Type |Min|Typ| Max |Units) .- Test Conditions 32 : . oo. 400); | V |Ves=0V Drain-Source Breakdown BVoss Voltage . IRF321 - : IRF323 350; | Vo jtlp=250pnA Gate Threshold Voltage ~ Vesith) ALL {2.0/ | 4.0 | V |Vos=Vas, lp=250uA Gate-Source Leakage Forward] lass | ALL | | | 100] nA |Ves=20V Gate-Source Leakage Reverse| lass | ALL | |. |-100] nA |Vas=20V Zero Gate Voltage loss ALL | | 250 | pA |Vps=Max. Rating, Ves=0V ., |Drain Current . | | 1000} yA |Vps=Max. RatingX0.8, Vas=OV, To=126C On-State Drain-Source IRFS2t 3.0; | A : n | toyon) Vps>lo(on)Ros(an) max., Vas= 1 0V Current (2). , IRF322 . - |inrs23}25} ~| 7 | 4 fo Lo: ioe ~ (14/181 9 . Static Drain-Source On-State Rosion) Vos=10V, [p=1.5A Resistance (2) : IRF322 7| 28 . inF323| | 1-7| 2-8 | 2 Forward Transconductance (2)| ats ALL -|1.0]2.2) 8B | Vps>IpienyXRoston) max., [p= 1.54 input Capacitance Cisg_ | <ALL | ~ [460] 600 | pF . : Output Capacitance. Coss ALL | | 90; 200 | pF |Ves=OV, Vos=25V, f=1.0MHz Reverse Transfer Capacitance| Criss ALL | .| 30} 40 | pF Turn-On Delay Time. fajon) | ALL | | | 40 | ns Rise Time : t | acc || ] 50 | ng |20=0-5BVoss, Ip=1.5A, Zo=50 2 (MOSFET switching times are essentially Turn-Off Delay Time tao | ALL | | | 100 | "8 lindependent of operating temperature.) Fall Time . t ALL | | | 50 | ns Total Gate Charge . . (Gate-Source Plus Gate-Drain)| G9 | ALL | /12.6) 18 | nO \yac tov, In=4.0A, Vos=0.8 Max. Rating Gate-Source Charge Qos AL | lee] ac (Gate charge is essentially independent of operating temperature. ) Gate-Drain (Miller) Charge Cad ALL | |9.7| nc THERMAL RESISTANCE Junction-to-Case . | Riruc ALL | |. } 3.12 | K/W Case-to-Sink - Rincs ALL | |0.1) | K/W |Mounting surface flat, smooth, and greased Junction-to-Ambient Rina ALL | | |] 30 | KW [Free Air Operation ' Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300ps, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature ee SAMSUNG SEMICONDUCTOR . . 109'.' 7964142 SAMSUNG ING SEMICONDUCTOR I INC 98D OStit _ oT: 34M qa de Bf seet4e ooos wah a 2 HANNE IRF320/321/322/323 _ POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic Symbo!| Type |Min|Typ| Max |Units Test Conditions IRF320) | _ 3.0] A Continuous Source Current Is IRF321 : Body Diode (Body Diode) L iheses |-| 25 | A |Modified MOSFET symbol D showing the integral & IRF320/ | 12 A_ jreverse P-N junction rectifier Ss S Pulse Source Current Isq (RF S24 (Body Diode) (3) IRF322 ~laiola IRF323; hees?| | | 1.6 | Vv |T=2526, ts=3.0A, Ves=OV Diode Forward Voltage (2) Vsp 3D Iheseg|~ | | 1-5 | Vv |Tc=25C, Is=2.5A, Vos=0V Reverse Recovery Time tr ALL | |450/ ns | Ty=150C, IrF=3.0A, sere toons Notes: (1) Tj=25C to 150C. (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3). Repetitive rating: Pulse width limited by max. junction temperature 6 Rae Ip, DRAIN CURRENT (AMPERES) o fo, DRAIN CURRENT (AMPERES) 9 0 1 2 4 5 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Output Characteristics Typical Transfer Characteristics Vas 10 Puse Test Vest 7V AREA IS UMITED BY IRF 3201 > Ip, DRAIN CURRENT (AMPERES) pb, DRAIN CURRENT (AMPERES) S, 3202 321 1 oO 4 . 16 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Saturation Characteristics Maximum Safe Operating Area Ce sawsunc SEMICONDUCTOR Oo 110ae Ag DEB rsesiue oO05h1e 3 IRF320/321/322/323 THERMAL IMPEDANCE (PER UNIT) 2 ZyscttWRinac, NORMALIZED EFFECTIVE TRANSIENT _7884142 SAMSUNG SEMICONDUCTOR INC _ ~ 88008112 o-34- ll N-CHANNEL POWER MOSFETS ld 1 Duty Factor, ont 2 Per Unt Bas0=Figs=3.12 Deg 9 TaeTomPou Zac tl} 11. SQUARE WAVE PULSE DURATION {SECONDS} Maximum Effective Transient Therma! Impedance Junction- to-Case Vs. Pulse Duration gfs, TRANSCONDUCTANCE (SIMENS) 1 2 3 4 ip, ORAIN CURRENT (AMPERES) Typical Transconductance Vs. Drain Current _ = ae uw BVpss, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 2 eo Oo 2 Q a o 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature ipn, REVERSE DRAIN CURRENT (AMPERES) Rosion), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) wv i) a 2 01 9 1 2 3 4 S 6 Vsp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical SourceDrain Diode Forward Voltage ix - a ~ S ~40 0 40 120 160 Ty, JUNCTION TEMPERATURE (C) . Normalized On-Resistance Vs. Temperature ce SAMSUNG SEMICONDUCTORPo ae " :_7964142 SAMSUNG SEMIC DE P7b4U42 OOO5113 5 - IRF320/321/322/323 C, CAPACITANCE (pF) 10 20 a0 40 50 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS} Typical Capacitance Vs. Drain to Source Voltage CURRENT PULSE OF 2 | DURATION INITIAL T=25C (HEATING EFFECT PULSE Rosion) DRAIN-TO-SOURCE ON RESISTANCE (OHMS) 0 3 6 9 12 18 Ip, ORAIN CURRENT (AMPERES) Typical On-Resistance Vs. Drain Current Pp, POWER DISSIPATION (WATTS) oO 20 40 60 80 100 i20 140 180 Ta, AMBIENT TEMPERATURE (C) Power Vs. Temperature Derating Curve ONDUCTOR INC _ 98D 05113 D0 T=344 Cet ete OA A Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) Ib, DRAIN CURRENT (AMPERES) a oO POWER MOSFETS 4 8 12 16 20 Q,, TOTAL GATE CHARGE (nc) Typical Gate Charge Vs. Gate-To-Source Voltage 50 15 100 125 150 Ta, AMBIENT TEMPERATURE (C) Maximum Drain Current Vs. Case Temperature esas SAMSUNG SEMICONDUCTOR 112