SRANSYS MMDT4401 ELECTRONICS LIMITED DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Ideal for Low Power Amplification SOT-363 and Switching Ultra-Small Surface Mount Package ale _ pim | Min | Max x A 0.10 0.30 B 1.15 1.35 KXX Cc 2.00 | 2.20 Mechanical Data D | 0.65 Nominal Case: SOT-363, Molded Plastic HS Eo F 0.30 | 0.40 Terminals: Solderable per MIL-STD-202, kT H 1.80 | 2.20 Method 208 J 0.10 Terminal Connections: See Diagram ft Sh y K 0.90 | 1.00 Marking: K2X a leo * L 025 | 0.40 Weight: 0.006 grams (approx.) DF L M o10 | 025 All Dimensions in mm Maximum Ratings @ Ta= 25 C unless otherwise specified Characteristic Symbol MMDT4401 Unit Collector-Base Voltage VcBo 60 Vv Collector-Emitter Voltage VcEO 40 Vv Emitter-Base Voltage VEBO 6.0 Vv Collector Current - Continuous (Note 1) Ic 600 mA Power Dissipation (Note 1) Pa 200 mw Thermal Resistance, Junction to Ambient (Note 1) R a 625 KW Operating and Storage and Temperature Range Tj, Tste -55 to +150 Cc Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300 s, dutycycle 2%.Electrical Characteristics @ Ta = 25 C unless otherwise specified Characteristic [Symbol | Min | Max | Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage V(BR)CBO 60 Vv Ic = 100 A, le =0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 Vv Ic = 1.0MA, Ip = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 Vv lE=100 A, Ic =0 Collector Cutoff Current IcEx 100 nA Voce = 35V, Vesiorr) = 0.4V Base Cutoff Current IBL 100 nA Voce = 35V, Vepiorr) = 0.4V ON CHARACTERISTICS (Note 2) 20 Ic= 100HA, VceE= 1.0V 40 Ilo = 1.0MA, VceE= 1.0V DC Current Gain Nre 80 Ic= 10mA, VceE= 1.0V 100 300 Ic = 150mA, Vce= 1.0V 40 Ig = 500MA, Voce = 2.0V Collector-Emitter Saturation Voltage Vce(SaT) be V c= soon B= aA Base- Emitter Saturation Voltage Veesar) | 9-78 oe Vv IC = seomis ie = om SMALL SIGNAL CHARACTERISTICS Output Capacitance Cob 6.5 pF Vos = 5.0V, f= 1.0MHz, le = 0 Input Capacitance Ceb 30 pF Vep = 0.5V, f = 1.0MHz, Ic = 0 Input Impedance hie 1.0 15 k Voltage Feedback Ratio hre 0.1 8.0 x104 | Voe= 10V, Ic = 1.0mA, Small Signal Current Gain hie 40 500 f= 1.0kHz Output Admittance Noe 1.0 30 S$ : : Voce = 10V, Io = 20mA, Current Gain-Bandwidth Product fr 250 MHz f= 100MHz SWITCHING CHARACTERISTICS Delay Time ta 15 ns Voc = 30V, Ic = 150mA, Rise Time tr 20 ns | VBE(of) = 2.0V, lpi = 15mA Storage Time ts 225 ns Voc = 30V, Ic = 150mA, Fall Time ty 30 ns Ip1 = Iba = 15mA Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300 s,dutycycle 2%.