© Semiconductor Components Industries, LLC, 2007
February, 2007 − Rev. 7 Publication Order Number:
BC807−16LT1/D
1
BC807−16LT1,
BC807−25LT1, BC807−40LT1
General Purpose
Transistors
PNP Silicon
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage VCEO −45 V
Collector − Base Voltage VCBO −50 V
Emitter − Base Voltage VEBO −5.0 V
Collector Current − Continuous IC−500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8 mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD300
2.4 mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
SOT−23
CASE 318
STYLE 6
12
3
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
1
5xx M G
G
5xx = Device Code
xx = A1, B1, or C
M = Date Code*
G= Pb−Free Package
MARKING DIAGRAM
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
BC807−16LT1, BC807−25LT1, BC807−40LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = −10 mA) V(BR)CEO −45 V
CollectorEmitter Breakdown Voltage
(VEB = 0, IC = −10 mA) V(BR)CES −50 V
EmitterBase Breakdown Voltage
(IE = −1.0 mA) V(BR)EBO −5.0 V
Collector Cutoff Current
(VCB = −20 V)
(VCB = −20 V, TJ = 150°C)
ICBO
−100
−5.0 nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = −100 mA, VCE = −1.0 V) BC807−16
BC807−25
BC807−40
(IC = −500 mA, VCE = −1.0 V)
hFE 100
160
250
40
250
400
600
CollectorEmitter Saturation Voltage
(IC = −500 mA, IB = −50 mA) VCE(sat) −0.7 V
BaseEmitter On V oltage
(IC = −500 mA, IB = −1.0 V) VBE(on) −1.2 V
SMALL−SIGNAL CHARACTERISTICS
CurrentGain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) fT100 MHz
Output Capacitance
(VCB = −10 V, f = 1.0 MHz) Cobo 10 pF
ORDERING INFORMATION
Device Specific Marking Package Shipping
BC807−16LT1
5A1
SOT−23 3000/Tape & Reel
BC807−16LT1G SOT−23
(Pb−Free) 3000/Tape & Reel
BC807−16LT3G SOT−23
(Pb−Free) 10,000/Tape & Reel
BC807−25LT1
5B1
SOT−23 3000/Tape & Reel
BC807−25LT1G SOT−23
(Pb−Free) 3000/Tape & Reel
BC807−25LT3 SOT−23 10,000/Tape & Reel
BC807−25LT3G SOT−23
(Pb−Free) 10,000/Tape & Reel
BC807−40LT1
5C
SOT−23 3000/Tape & Reel
BC807−40LT1G SOT−23
(Pb−Free) 3000/Tape & Reel
BC807−40LT3 SOT−23 10,000/Tape & Reel
BC807−40LT3G SOT−23
(Pb−Free) 10,000/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BC807−16LT1, BC807−25LT1, BC807−40LT1
http://onsemi.com
3
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
hFE, DC CURRENT GAIN
1000
10
−1000−0.1 −10 −100
100
−1.0
VCE = −1.0 V
TA = 25°C
IB, BASE CURRENT (mA)
Figure 2. Saturation Region
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
100
10
1.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Temperature Coefficients
+1.0
IC, COLLECTOR CURRENT
Figure 5. Capacitances
−0.1 −1.0−1.0 −10 −100 −1000
−2.0
−1.0
0
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS
)
V, VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
−1.0
−0.8
−0.6
−0.4
−0.2
0
−0.01 −0.1 −10 −100−1.0
−1.0
−0.8
−0.6
−0.4
−0.2
0
−1.0 −10 −1000−100
−10 −100
TJ = 25°C
IC = −10 mA
IC = −100 mA
IC = −300 mA
IC =
−500 mA
TA = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = −1.0 V
VCE(sat) @ IC/IB = 10
qVC for VCE(sat)
qVB for VBE
Cob
Cib
BC807−16LT1, BC807−25LT1, BC807−40LT1
http://onsemi.com
4
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
2.10 2.40 2.64 0.083 0.094 0.104
HE0.35 0.54 0.69 0.014 0.021 0.029
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BC807−16LT1/D
PUBLICATION ORDERING INFORMATION
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Phone: 81−3−5773−3850
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