MIXA10WB1200TML Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 100 A IC25 IFSM = 17 A IC25 = 17 A = 320 A VCE(sat) = 1.8 V VCE(sat) = 1.8 V Preliminary data Part name (Marking on product) MIXA10WB1200TML E72873 Pin configuration see outlines. Features: Application: Package: * High level of integration - only one power semiconductor module required for the whole drive * Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 sec. - very low gate charge - square RBSOA @ 3x IC - low EMI * Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) * Temperature sense included * SONICTM diode - fast and soft reverse recovery - low operating forward voltage * AC motor drives * Pumps, Fans * Washing machines * Air-conditioning system * Inverter and power supplies * DCB based "E1-Pack" * Assembly height is 17 mm * Insulated base plate * UL registered E72873 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110916c 1-7 MIXA10WB1200TML Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage IC25 IC80 collector current Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 9 A; VGE = 15 V VGE(th) gate emitter threshold voltage IC = 0.3 mA; VGE = VCE TVJ = 25C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25C TVJ = 125C IGES gate emitter leakage current VGE = 20 V VCE = 600 V; VGE = 15 V; IC = 10 A typ. max. Unit 1200 V 20 30 V V TC = 25C TC = 80C 17 12 A A TC = 25C 63 W 2.1 V V TVJ = 25C continuous transient TVJ = 25C TVJ = 125C QG(on) total gate charge td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse RBSOA reverse bias safe operating area VGE = 15 V; RG = 100 W; VCEK = 1200 V TVJ = 125C ISC (SCSOA) short circuit safe operating area VCE = 900 V; VGE = 15 V; TVJ = 125C RG = 100 W; tp = 10 s; non-repetitive RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per IGBT) inductive load VCE = 600 V; IC = 10 A VGE = 15 V; RG = 100 W 1.8 2.1 5.5 TVJ = 125C 6.0 6.5 V 0.02 0.2 0.1 mA mA 500 nA 27 nC 70 40 250 100 1.1 1.1 ns ns ns ns mJ mJ 30 40 A A 2.0 K/W K/W max. Unit 0.7 Output Inverter D1 - D6 Ratings Symbol Definitions Conditions VRRM max. repetitve reverse voltage TVJ = 25C 1200 V IF25 IF80 forward current TC = 25C TC = 80C 19 13 A A VF forward voltage IF = 10 A; VGE = 0 V 2.2 V V Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -250 A/s IF = 10 A; VGE = 0 V RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink typ. TVJ = 25C TVJ = 125C 1.95 1.85 TVJ = 125C tbd tbd tbd tbd (per diode) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved min. C A ns mJ 2.4 0.8 K/W K/W 20110916c 2-7 MIXA10WB1200TML Brake T7 Ratings Symbol Definitions Conditions min. VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage IC25 IC80 collector current Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 9 A; VGE = 15 V VGE(th) gate emitter threshold voltage IC = 0.3 mA; VGE = VCE TVJ = 25C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25C TVJ = 125C IGES gate emitter leakage current VGE = 20 V VCE = 600 V; VGE = 15 V; IC = 10 A typ. max. Unit 1200 V 20 30 V V TC = 25C TC = 80C 17 12 A A TC = 25C 63 W 2.1 V V TVJ = 25C continuous transient TVJ = 25C TVJ = 125C QG(on) total gate charge td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse RBSOA reverse bias safe operating area VGE = 15 V; RG = 100 W; VCEK = 1200 V TVJ = 125C ISC (SCSOA) short circuit safe operating area VCE = 900 V; VGE = 15 V; TVJ = 125C RG = 100 W; tp = 10 s; non-repetitive RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per IGBT) inductive load VCE = 600 V; IC = 10 A VGE = 15 V; RG = 100 W 1.8 2.1 5.5 TVJ = 125C 6.0 6.5 V 0.01 0.1 0.1 mA mA 500 nA 27 nC 70 40 250 100 1.1 1.1 ns ns ns ns mJ mJ 30 40 A A 2.0 0.7 K/W K/W Brake Chopper D7 Ratings typ. max. Unit TVJ = 150C 1200 V TC = 25C TC = 80C 19 13 A A 1.95 1.85 2.2 V V TVJ = 25C TVJ = 125C 0.01 0.1 0.1 mA mA TVJ = 125C tbd tbd tbd tbd Symbol Definitions Conditions VRRM max. repetitive reverse voltage IF25 IF80 forward current VF forward voltage IF = 10 A; VGE = 0 V TVJ = 25C TVJ = 125C IR reverse current VR = VRRM Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = tbd A/s IF = 10 A; VGE = 0 V RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per diode) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved min. C A ns mJ 2.4 0.8 K/W K/W 20110916c 3-7 MIXA10WB1200TML Input Rectifier Bridge D8 - D11 Symbol Definitions Conditions min. Ratings typ. max. Unit VRRM max. repetitive reverse voltage TVJ = 25C 1600 V IFAV IDAVM average forward current max. average DC output current sine 180 rect.; d = 1/3 TC = 80C TC = 80C 24 69 A A IFSM max. forward surge current t = 10 ms; sine 50 Hz TVJ = 25C TVJ = 125C 270 240 A A I2t I2t value for fusing t = 10 ms; sine 50 Hz TVJ = 25C TVJ = 125C 360 290 A2s A2s Ptot total power dissipation VF forward voltage IF = 30 A TVJ = 25C TVJ = 125C 1.27 1.24 IR reverse current VR = VRRM TVJ = 25C TVJ = 125C 0.2 RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink TC = 25C (per diode) (per diode) 70 W 1.7 V V 0.02 mA mA 1.8 K/W K/W 0.6 Temperature Sensor NTC Symbol Definitions R25 B25/50 resistance Conditions min. TC = 25C 4.45 Ratings typ. max. 4.7 3510 5.0 Unit kW K Module Symbol Definitions TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage CTI comparative tracking index Md mounting torque dS dA creep distance on surface strike distance through air Conditions min. Ratings typ. max. Unit 125 150 125 C C C 2500 V~ -40 -40 IISOL < 1 mA; 50/60 Hz (M4) 2.0 2.2 12.7 7.6 Weight Nm mm mm 40 g Equivalent Circuits for Simulation I R0 Ratings typ. max. Unit TVJ = 150C 0.86 12.3 V mW T1 - T6 TVJ = 150C 1.1 153 V mW free wheeling diode D1 - D6 TVJ = 150C 1.09 91 V mW V0 R0 IGBT T7 TVJ = 150C 1.1 153 V mW V0 R0 free wheeling diode D7 TVJ = 150C 1.09 91 V mW V0 Symbol Definitions Conditions V0 R0 rectifier diode D8 - D13 V0 R0 IGBT V0 R0 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved min. TC = 25C unless otherwise stated 20110916c 4-7 MIXA10WB1200TML Circuit Diagram Outline Drawing Dimensions in mm (1 mm = 0.0394") Part number M I X A 10 WB 1200 T ML Ordering Part Name Marking on Product Standard MIXA 10 WB 1200 TML MIXA10WB1200TML IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved = Module = IGBT = XPT = standard = Current Rating [A] = 6-Pack + 3~ Rectifier Bridge & Brake Unit = Reverse Voltage [V] = NTC = E1-Pack Delivering Mode Base Qty Ordering Code Box 10 509367 20110916c 5-7 MIXA10WB1200TML 20 20 VGE = 15 V 16 16 12 TVJ = 25C IC [A] VGE = 15 V 17 V 19 V 8 8 [A] TVJ = 125C 11 V TVJ = 125C 12 IC 13 V 9V 4 0 4 0 1 VCE [V] 2 0 3 Fig. 1 Typ. output characteristics 20 16 [A] 1 2 VCE [V] 3 4 Fig. 2 Typ. output characteristics 20 IC 0 IC = 10 A VCE = 600 V 15 12 VGE [V] 8 10 5 4 TVJ = 125C 0 TVJ = 25C 5 6 7 8 9 10 11 12 0 13 0 10 RG = 100 VCE = 600 V VGE = 15 V TVJ = 125C 2.5 30 Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. tranfer characteristics 3.0 20 QG [nC] VGE [V] 2.0 Eon 1.6 IC = 10 A VCE = 600 V VGE = 15 V TVJ = 125C Eon 2.0 E Eoff 1.5 [mJ] E [mJ] 1.0 Eoff 0.8 0.4 0.5 0.0 1.2 0 4 8 12 16 20 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 0.0 80 120 160 200 240 RG [ ] Fig. 6 Typ. switching energy vs. gate resistance 20110916c 6-7 MIXA10WB1200TML 20 2.4 100000 TVJ = 125C VR = 600 V 2.0 15 IF Qrr 10 [A] [C] 0.8 TVJ = 125C 5 TVJ = 25C 0 0.0 0.5 1.0 1.2 1.5 VF [V] 2.0 2.5 1000 0.0 200 3.0 5A 100 0 250 25 300 50 75 350 400100 T [C] diF /dt [A/s] 125 450 150 500 Fig. reverse recovery Fig.8 8Typical Typ. thermistor resistancecharge vs. temperature Qrr versus. diF/dt (125C) 24 500 TVJ = 125C 20 [A] 10 A 0.4 Fig. 7 Typ. forward characteristics IRR 20 A 10000 Rnom [ W ] 1.6 TVJ = 125C 20 A VR = 600 V 20 A 400 VR = 600 V 10 A 16 5A 12 trr [ns] 10 A 300 5A 200 8 100 4 0 200 250 300 350 400 diF /dt [A/s] 450 500 Fig. 9 Typical peak reverse current IRR versus diF/dt (125C) 0 200 250 300 350 400 diF /dt [A/s] 450 500 Fig. 10 Typ. recovery time trr vs. di/dt (125C) 0.6 TVJ = 125C VR = 600 V 0.5 20 A Erec 0.4 [mJ] 10 A 0.3 5A 0.2 0.1 200 250 300 350 400 diF /dt [A/s] 450 500 Fig. 11 Typ. recovery energy Erec vs. diF/dt (125C) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110916c 7-7 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: MIXA10WB1200TML