1
Motorola Thyristor Device Data
Triacs
Silicon Bidirectional Thyristors
... designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
•Blocking Voltage to 800 Volts
•All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
•Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
•Gate Triggering Guaranteed in Three Modes (MAC320FP Series) or
Four Modes (MAC320AFP Series)
MAXIMUM RATINGS (TC = 25°C unless otherwise noted.)
Rating Symbol Value Unit
Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC320-4FP, MAC320A4FP
MAC320-6FP, MAC320A6FP
MAC320-8FP, MAC320A8FP
MAC320-10FP, MAC320A10FP
VDRM
200
400
600
800
Volts
Peak Gate Voltage VGM 10 Volts
On-State RMS Current (TC = +75°C, Full Cycle Sine Wave 50 to 60 Hz)(2) IT(RMS) 20 Amps
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +75°C,
preceded and followed by rated current) ITSM 150 Amps
Peak Gate Power (TC = +75°C, Pulse Width = 2 µs) PGM 20 Watts
Average Gate Power (TC = +75°C, t = 8.3 ms) PG(AV) 0.5 Watt
Peak Gate Current IGM 2 Amps
RMS Isolation Voltage (TA = 25°C, Relative Humidity
p
20%) V(ISO) 1500 Volts
Operating Junction Temperature TJ–40 to +125 °C
Storage Temperature Range Tstg –40 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 1.8 °C/W
Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the
plastic body.
Order this document
by MAC320FP/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
MT1
G
MT2
MAC320FP
Series
MAC320AFP
Series
CASE 221C-02
STYLE 3
ISOLATED TRIACs
THYRISTORS
20 AMPERES RMS
200 thru 800 VOLTS
2 Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Peak Blocking Current
(VD = Rated VDRM, Gate Open) TJ = 25°C
TJ = +125°C
IDRM —
——
—10
2µA
mA
Peak On-State Voltage (Either Direction)
(ITM = 28 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
p
2%) VTM — 1.4 1.7 Volts
Peak Gate Trigger Current
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms
Minimum Gate Pulse Width = 2 µs)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
IGT
—
—
—
—
—
—
—
—
50
50
50
75
mA
Peak Gate Trigger Voltage
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms
Minimum Gate Pulse Width = 2 µs)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
(Main Terminal Voltage = Rated VDRM, RL = 10 , TJ = +110°C)
MT2(+), G(+); MT2(+), G(–)
MT2(–), G(–); MT2(–), G(+) “A” SUFFIX ONLY
VGT
—
—
—
—
0.2
0.2
0.9
0.9
1.1
1.4
—
—
2
2
2
2.5
—
—
Volts
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 200 mA)
IH— 6 40 mA
Turn-On Time
(VD = Rated VDRM, ITM = 28 A, IGT = 120 mA,
Rise Time = 0.1 µs, Pulse Width = 2 µs)
tgt — 1.5 10 µs
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 28 A, Commutating di/dt = 10 A/ms,
Gate Unenergized, TC = +75°C)
dv/dt(c) — 5 — V/µs
110
120
130
2.0 4.0 6.0 8.0 10 12
60
70
80
90
100
14 16
dc
0
Figure 1. RMS Current Derating
5.0
40
35
30
25
20
15
10
2018
Figure 2. On-State Power Dissipation
IT(RMS), RMS ON-STATE CURRENT (AMP)
50 02.0 4.0 6.0 8.0 10 12 14 160 2018
IT(RMS), RMS ON-STATE CURRENT (AMP)
α
= 30
°
60
°
90
°
180
°
α
= Conduction
Angle
α
α
α
= Conduction
Angle
α
α
PD(AV), AVERAGE POWER (WATT)
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
°
180
°
dc
90
°
60
°
α
= 30
°
TYPICAL CHARACTERISTICS
3
Motorola Thyristor Device Data
Figure 5. Maximum On-State Characteristics
Figure 4. Typical Gate Trigger Current
Figure 3. Typical Gate Trigger Voltage
1
30
2
3
5
7
10
20
50
70
100
0.1
0.7
0.5
0.3
4
0.2
0.4 0.8 1.2 1.6 2 2.4 2.8 3.63.2 4.4
vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
i , INSTANTANEOUS FORWARD CURRENT (AMP)
TM
TJ = 25
°
C
V , GATE TRIGGER VOLTAGE (NORMALIZED)
GTM
–60 120–40 0–20 20 40 60 80 100 140
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
0.7
0.5
0.3
3
2
1
TJ, JUNCTION TEMPERATURE (
°
C)
–60 120–40 0–20 20 40 60 80 100 140
TJ, JUNCTION TEMPERATURE (
°
C)
0.7
0.5
0.3
3
2
1
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
I , GATE TRIGGER CURRENT (NORMALIZED)
GTM
125
°
C
4 Motorola Thyristor Device Data
Figure 8. Thermal Response
0.1 5 k2 k1 k500200100502010
10 k
t, TIME (ms)
1
0.2
0.5
5
0.02
0.1
0.01 210.50.2
0.05
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 6. Typical Holding Current Figure 7. Maximum Nonrepetitive Surge Current
–60 120–40 0–20 20 40 60 80 100 140
TJ, JUNCTION TEMPERATURE (
°
C)
0.7
0.5
0.3
2
1
GATE OPEN
APPLIES TO EITHER DIRECTION
I , HOLDING CURRENT (NORMALIZED)
H
NUMBER OF CYCLES
103 72 51
300
200
100
70
50
30
T , PEAK SURGE CURRENT (AMP)
SM
3
Z
θ
JC(t) = r(t)
•
R
θ
JC
TC = 80
°
C
f = 60 Hz
SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT
5
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
CASE 221C-02
1 2 3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.
STYLE 3:
PIN 1. MT 1
2. MT 2
3. GATE
–Y–
–B– –T–
Q
P
A
K
H
Z
GL
F
D3 PL
M
B
M
0.25 (0.010) Y
E
NS
J
R
C
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.680 0.700 17.28 17.78
B0.388 0.408 9.86 10.36
C0.175 0.195 4.45 4.95
D0.025 0.040 0.64 1.01
E0.340 0.355 8.64 9.01
F0.140 0.150 3.56 3.81
G0.100 BSC 2.54 BSC
H0.110 0.155 2.80 3.93
J0.018 0.028 0.46 0.71
K0.500 0.550 12.70 13.97
L0.045 0.070 1.15 1.77
N0.049 ––– 1.25 –––
P0.270 0.290 6.86 7.36
Q0.480 0.500 12.20 12.70
R0.090 0.120 2.29 3.04
S0.105 0.115 2.67 2.92
Z0.070 0.090 1.78 2.28
6 Motorola Thyristor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in dif ferent
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
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MAC320FP/D
*MAC320FP/D*
◊
