MBR3100RL - ON Semiconductor - Datasheet.Global

June, 2006 − Rev. 6 1Publication Order Number:

MBR3100/D

MBR3100

Preferred Device

Axial Lead Rectifier

This device employs the Schottky Barrier principle in a large area

metal−to−silicon power diode. State−of−the−art geometry features

epitaxial construction with oxide passivation and metal overlap

contact. Ideally suited for use as rectifiers in low−voltage,

high−frequency inverters, free wheeling diodes, and polarity

protection diodes.

Features

•Low Reverse Current

•Low Stored Charge, Majority Carrier Conduction

•Low Power Loss/High Efficiency

•Highly Stable Oxide Passivated Junction

•Guard−ring for Stress Protection

•Low Forward Voltage

•175°C Operating Junction Temperature

•High Surge Capacity

•Pb−Free Packages are Available*

Mechanical Characteristics:

•Case: Epoxy, Molded

•Weight: 1.1 Gram (Approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

•Polarity: Cathode indicated by Polarity Band

MAXIMUM RATINGS

Rating Symbol Max Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

100 V

Average Rectified Forward Current TA = 100°C

(RqJA = 28°C/W, Refer to P.C. Board Mount ing,

Note 3)

IO3.0 A

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

IFSM 150 A

Operating and Storage Junction Temperature

Range (Note 1) (Reverse Voltage Applied) TJ, Tstg −65 to

+175 °C

Voltage Rate of Change (Rated VR) dv/dt 10 V/ns

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. The heat generated must be less than the thermal conductivity from

Junction−to−Ambient: dPD/dTJ < 1/RqJA.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping†

ORDERING INFORMATION

AXIAL LEAD

CASE 267−05

(DO−201AD)

STYLE 1

SCHOTTKY BARRIER

RECTIFIER

3.0 AMPERES, 100 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

MBR3100 Axial Lead 500 Units / Bag

MBR3100RL Axial Lead 1500/Tape & Ree

MARKING DIAGRAM

MBR

3100

YYWWG

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MBR3100RLG Axial Lead

(Pb−Free) 1500/Tape & Ree

MBR3100G Axial Lead

(Pb−Free) 500 Units / Bag

† For information on tape and reel specifications,

including part orientation and tape sizes, please

refer t o our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

A = Assembly Location

YY = Year

WW = Work Week

G= Pb−Free Package

(Note: Microdot may be in either location

)

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THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient (see Note 3, Mounting Method 3) RqJA 28 °C/W

ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted)

Characteristic Symbol Max Unit

Maximum Instantaneous Forward Voltage (Note 2)

(iF = 3.0 Amps, TL = 25°C)

(iF = 3.0 Amps, TL = 100°C)

vF0.79

0.69

Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)

TL = 25°C

TL = 100°C

iR0.6

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

IF (AV), AVERAGE FORWARD CURRENT (AMPS)

0 2.01.0 3.0 4.0 5.0

0.5

1.5

2.5

P , AVERAGE POWER DISSIPATION (WATTS)

F (AV)

TA, AMBIENT TEMPERATURE (°C)

20 1006040 80

120 140 160 180

I , AVERAGE FORWARD CURRENT (AMPS)

F (AV)

VR REVERSE VOLTAGE (VOLTS)

02010 30 40

0.001

0.002

0.005

0.01

0.05

0.02

0.1

0.5

0.2

vF, INSTANTANEOUS VOLTAGE (VOLTS)

0.20.1 0.3 0.4 0.5

0.2

0.1

0.70.6 0.8 0.9

0.3

0.05

0.5

I , REVERSE CURRENT (mA)

i , INSTANTANEOUS FORWARD CURRENT (AMPS)

25°C

100°C

TJ = 150°C

1 1.2 1.31.1 50 60 80 90 100

0.0001

0.0002

0.0005

25°C

100°C

TJ = 150°C

125°C

3.5

*The curves shown are typical for the highest voltage device in the

voltage grouping. Typical reverse current for lower voltage selection

can be estimated from these curves if VR is su fficient below rated VR

SQUARE

WAVE

SQUARE

WAVE

Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current*

Figure 3. Current Derating

(Mounting Method #3 per Note 3) Figure 4. Power Dissipation

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VR, REVERSE VOLTAGE (VOLTS)

020 6040 80

300

400

C, CAPACITANCE (pF)

200

100

Figure 5. Typical Capacitance

TJ = 25°C

f = 1 MHz

TYPICAL VALUES FOR RqJA IN STILL AIR

Data shown for thermal resistance junction−to−ambient

(RqJA) for the mountings shown is to be used as typical

guideline values for preliminary engineering, or in case the

tie point temperature cannot be measured.

Mounting

Method

Lead Length, L (in)

1/8 1/4 1/2 3/4 RqJA

50 51 53 55 °C/W

°C/W

58 59 61 63

NOTE 3 — MOUNTING DATA

ÉÉÉÉÉÉÉÉÉÉÉ

ÉÉÉÉÉÉÉÉÉÉÉÉÉ

ÉÉ

Mounting Method 1

P.C. Board where available

copper surface is small.

L L L

Mounting Method 2

Vector Push−In

Terminals T−28

Mounting Method 3

P.C. Board with

2−1/2″ X 2−1/2″

copper surface.

L = 1/2’’

Board Ground Plane

MBR3100

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PACKAGE DIMENSIONS

AXIAL LEAD

CASE 267−05

ISSUE G

STYLE 1:

PIN 1. CATHODE (POLARITY BAND)

2. ANODE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.287 0.374 7.30 9.50

B0.189 0.209 4.80 5.30

D0.047 0.051 1.20 1.30

K1.000 −−− 25.40 −−−

NOTES:

1. DIMENSIONS AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 267−04 OBSOLETE, NEW STANDARD 267−05.

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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MBR3100/D

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