1165903 High voltage power switch. designed for horizontal deflection output stage of CTV receivers and high voltage, fast switching and industrial application. Features: * Collector-emitter sustaining voltage - 100mA. * VCEO (sus) = 400V (minimum). * Optimum drive condition curves. TO-3 Pin 1. Base 2. Emitter Collector (Case) Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 NPN BUY69A 10 Ampere Silicon Power Transistors 200 - 400 Volts 100 Watts TO-3 Dimensions : Millimetres http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <1> 22/10/08 V1.1 1165903 Maximum Ratings Characteristic Symbol BUY69A Collector-Emitter Voltage (VBE = 0) VCBS 1000 CoIIector-Emitter Voltage VCEO 400 Emitter-Base Voltage VEBO 8.0 IC ICM 10 15 Base Current-Peak IB 3.0 Total Power Dissipation at TC = 25C Derate above 25C PD 100 0.57 W W/C TJ, TSTG -65 to +200 C Symbol Maximum Unit Rjc 1.75 C/W Collector Current-Continuous -Peak Operating and Storage Junction Temperature Range Unit V A Thermal Characteristics Characteristic Thermal Resistance Junction to Case PD, Power Dissipation (Watts) Power Derating TC, Temperature (C) http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <2> 22/10/08 V1.1 1165903 Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Symbol Minimum Maximum VCEO (sus) 400 - Unit Off Characteristics Collector-Emitter Sustaining Voltage (1) (lC = 100mA, lB = 0) BUY69A Collector-Base Voltage (lC = 1.0mA, lE = 0) BUY69A VCBO 1000 Collector Cut off Current (VCE = 1000V, VBE = 0) BUY69A ICES - V Emitter-Base Cut off Current (VEB = 8.0V, IC = 0 ) - 1.0 mA - IEBO - hFE 15 - Collector-Emitter Saturation Voltage (IC = 8.0A, lB = 2.5A) VCE (sat) - 3.3 Base-Emitter Saturation Voltage (IC = 8.0A, IB = 2.5A) VBE (sat) - 2.2 fT 10 - VCC = 250V, IC = 5A tr - 0.3 IB1 = -IB2 = 1.0A ts - 1.8 - tf - 1.0 On Characteristics (1) DC Current Gain (VCE = 10V, IC = 2.5A) V Dynamic Characteristics Current Gain-Bandwidth Product (2) (IC = 500mA, VCE = 10V, f = 1MHz) MHz Switching Characteristics Rise Time Storage Time Fall Time s (1) Pulse Test : Pulse Width = 300s, Duty Cycle 2.0%. (2) f = h * f . T fe test Part Number Table Description Part Number Transistor, NPN, TO-3 BUY69A Disclaimer This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. SPC Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2008. http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <3> 22/10/08 V1.1