1165903
Page <1> 22/10/08 V1.1
http://www.farnell.com
http://www.newark.com
http://www.cpc.co.uk
High voltage power switch.
designed for horizontal deflection output stage of CTV receivers and high voltage, fast switching
and industrial application.
Features:
• Collector-emitter sustaining voltage - 100mA.
•VCEO (sus) = 400V (minimum).
•Optimum drive condition curves.
TO-3
Pin 1. Base
2. Emitter
Collector (Case)
Dimensions Minimum Maximum
A 38.75 39.96
B 19.28 22.23
C 7.96 9.28
D 11.18 12.19
E 25.20 26.67
F 0.92 1.09
G 1.38 1.62
H 29.90 30.40
I 16.64 17.30
J 3.88 4.36
K 10.67 11.18
10 Ampere
Silicon Power
Transistors
200 - 400 Volts
100 Watts
NPN
BUY69A
TO-3
Dimensions : Millimetres
1165903
Page <2> 22/10/08 V1.1
http://www.farnell.com
http://www.newark.com
http://www.cpc.co.uk
Maximum Ratings
Characteristic Symbol BUY69A Unit
Collector-Emitter Voltage (VBE = 0) VCBS 1000
VCoIIector-Emitter Voltage VCEO 400
Emitter-Base Voltage VEBO 8.0
Collector Current-Continuous
-Peak
IC
ICM
10
15 A
Base Current-Peak IB3.0
Total Power Dissipation at TC = 25°C
Derate above 25°C PD100
0.57
W
W/°C
Operating and Storage Junction Temperature Range TJ, TSTG -65 to +200 °C
Characteristic Symbol Maximum Unit
Thermal Resistance Junction to Case Rθjc 1.75 °C/W
Thermal Characteristics
Power Derating
TC, Temperature (°C)
PD, Power Dissipation (Watts)
1165903
Page <3> 22/10/08 V1.1
http://www.farnell.com
http://www.newark.com
http://www.cpc.co.uk
Electrical Characteristics (TC= 25°C unless otherwise noted)
Characteristic Symbol Minimum Maximum Unit
Off Characteristics
Collector-Emitter Sustaining Voltage (1) BUY69A
(lC = 100mA, lB= 0) VCEO (sus) 400 -
V
Collector-Base Voltage (lC = 1.0mA, lE= 0) BUY69A VCBO 1000 -
Collector Cut off Current
(VCE = 1000V, VBE = 0)BUY69A ICES -
1.0 mA
Emitter-Base Cut off Current
(VEB = 8.0V, IC= 0 ) IEBO -
On Characteristics (1)
DC Current Gain
(VCE = 10V, IC= 2.5A) hFE 15 - -
Collector-Emitter Saturation Voltage
(IC= 8.0A, lB= 2.5A) VCE (sat) - 3.3
V
Base-Emitter Saturation Voltage
(IC= 8.0A, IB= 2.5A) VBE (sat) - 2.2
Dynamic Characteristics
Current Gain-Bandwidth Product (2)
(IC= 500mA, VCE = 10V, f = 1MHz) fT10 - MHz
(1) Pulse Test : Pulse Width = 300µs, Duty Cycle ≤2.0%.
(2) fT= hfe• ftest.
Switching Characteristics
Rise Time VCC = 250V, IC= 5A tr- 0.3
µs
Storage Time IB1 = -IB2 = 1.0A ts- 1.8
Fall Time -tf- 1.0
Part Number Table
Description Part Number
Transistor, NPN, TO-3 BUY69A
Disclaimer This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes
in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied.
The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data
sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage
resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded.
This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. SPC Multicomp is the registered trademark of the Group. © Premier Farnell plc 2008.
