MPSA05 MPSA06 NPN
MPSA55 MPSA56 PNP
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPSA05, MPSA55
series devices are complementary silicon transistors
designed for low power output and medium power
driver applications.
MARKING: FULL PART NUMBER
MPSA05 MPSA06
MAXIMUM RATINGS: (TA=25°C) SYMBOL MPSA55 MPSA56 UNITS
Collector-Base Voltage VCBO 60 80 V
Collector-Emitter Voltage VCEO 60 80 V
Emitter-Base Voltage VEBO 4.0 V
Continuous Collector Current IC 500 mA
Power Dissipation PD 625 mW
Power Dissipation (TC=25°C) PD 1.5 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 200 °C/W
Thermal Resistance JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=Rated VCBO 100 nA
ICES V
CE=60V 100 nA
BVCEO I
C=1.0mA (MPSA05, 55) 60 V
BVCEO I
C=1.0mA (MPSA06, 56) 80 V
BVEBO I
E=100μA 4.0 V
VCE(SAT) I
C=100mA, IB=10mA 0.25 V
VBE(ON) V
CE=1.0V, IC=100mA 1.2 V
hFE V
CE=1.0V, IC=10mA 100
hFE V
CE=1.0V, IC=100mA 100
fT V
CE=2.0V, IC=10mA, f=100MHz (NPN) 100 MHz
fT V
CE=1.0V, IC=100mA, f=100MHz (PNP) 50 MHz
TO-92 CASE
R7 (26-March 2015)
www.centralsemi.com
MPSA05 MPSA06 NPN
MPSA55 MPSA56 PNP
COMPLEMENTARY
SILICON TRANSISTORS
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
TO-92 CASE - MECHANICAL OUTLINE
TYPICAL ELECTRICAL CHARACTERISTICS
www.centralsemi.com
R7 (26-March 2015)
MPSA05 MPSA06 NPN
MPSA55 MPSA56 PNP
COMPLEMENTARY
SILICON TRANSISTORS
R7 (26-March 2015)
www.centralsemi.com
NPN TYPICAL ELECTRICAL CHARACTERISTICS
MPSA05 MPSA06 NPN
MPSA55 MPSA56 PNP
COMPLEMENTARY
SILICON TRANSISTORS
R7 (26-March 2015)
www.centralsemi.com
PNP TYPICAL ELECTRICAL CHARACTERISTICS
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