IRG7PH30K10DPBF - INTERNATIONAL RECTIFIER

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

IRG7PH30K10DPbF

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08/14/09

n-channel

VCES = 1200V

IC = 16A, TC = 100°C

tSC ≥ 10µs, TJ(max) = 150°C

VCE(on) typ. = 2.05V

Features

• Low VCE (ON) Trench IGBT Technology

• Low switching losses

• 10 µS short circuit SOA

• Square RBSOA

• 100% of the parts tested for ILM

• Positive VCE (ON) Temperature co-efficient

• Ultra fast soft Recovery Co-Pak Diode

• Tight parameter distribution

• Lead Free Package

Benefits

• High Efficiency in a wide range of applications

• Suitable for a wide range of switching frequencies due to

Low VCE (ON) and Low Switching losses

• Rugged transient Performance for increased reliability

• Excellent Current sharing in parallel operation

GC E

Gate Collector Emitter

PD - 97403

GCE

TO-247AC

Absolute Maximum Ratings

Parameter Max. Units

CES

Collector-to-Emitter Voltage 1200 V

@ T

= 25°C Continuous Collector Current 30

@ T

= 100°C Continuous Collector Current 16

NOMINAL

Nominal Current 9.0

Pulse Collector Current, Vge = 15V 27 A

Clamped Inductive Load Current, Vge = 20V

@ T

= 25°C Diode Continous Forward Current 30

@ T

= 100°C Diode Continous Forward Current 16

Diode Maximum Forward Current

Continuous Gate-to-Emitter Voltage ±30 V

@ T

= 25°C Maximum Power Dissipation 180 W

@ T

= 100°C Maximum Power Dissipation 71

Operating Junction and -55 to +150

STG

Storage Temperature Range °C

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter Min. Typ. Max. Units

θJC

(IGBT) Thermal Resistance Junction-to-Case-(each IGBT)

––– ––– 0.70

θJC

(Diode) Thermal Resistance Junction-to-Case-(each Diode)

––– ––– 1.44 °C/W

θCS

Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––

θJA

Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 –––

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Notes:

VCC = 80% (VCES), VGE = 20V, L = 36µH, RG = 33Ω.

Pulse width limited by max. junction temperature.

Refer to AN-1086 for guidelines for measuring V(BR)CES safely.

Rθ is measured at TJ of approximately 90°C.

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Ref.Fig

(BR)CES

Collector-to-Emitter Breakdown Voltage

1200 — — V V

= 0V, I

= 250µA

CT6

∆V

(BR)CES

/∆T

Temperature Coeff. of Breakdown Voltage

—1.11—V/°C

= 0V, I

= 1mA (25°C-150°C)

CT6

CE(on)

Collector-to-Emitter Saturation Voltage — 2.05 2.35 I

= 9.0A, V

= 15V, T

= 25°C

5,6,7

—2.56— V

= 9.0A, V

= 15V, T

= 150°C

9,10,11

GE(th)

Gate Threshold Voltage 5.0 — 7.5 V V

= V

, I

= 400µA

9,10

∆V

GE(th)

/∆TJ

Threshold Voltage temp. coefficient — -15 — mV/°C V

= V

, I

= 400µA (25°C - 150°C)

11,12

gfe Forward Transconductance — 6.2 — S V

= 50V, I

= 9.0A, PW = 80µs

CES

Collector-to-Emitter Leakage Current — 1.0 25 µA V

= 0V, V

= 1200V

—400— V

= 0V, V

= 1200V, T

= 150°C

Diode Forward Voltage Drop — 2.0 3.0 V I

= 9.0A

—2.1— I

= 9.0A, T

= 150°C

GES

Gate-to-Emitter Leakage Current — — ±100 nA V

= ±30V

Switching Characteristics @ T

= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

Ref.Fig

Total Gate Charge (turn-on) — 45 68 I

= 9.0A

Gate-to-Emitter Charge (turn-on) — 8.7 13 nC V

= 15V

CT1

Gate-to-Collector Charge (turn-on) — 20 30 V

= 600V

Turn-On Switching Loss — 530 760 I

= 9.0A, V

= 600V, V

= 15V

CT4

off

Turn-Off Switching Loss — 380 600 µJ R

= 22Ω, L = 1.0mH, L

= 150nH, T

= 25°C

total

Total Switching Loss — 910 1360

Energy losses include tail & diode reverse recovery

d(on)

Turn-On delay time — 14 31 I

= 9.0A, V

= 600V, V

= 15V

CT4

Rise time — 24 41 ns R

= 22Ω, L = 1.0mH, L

= 150nH, T

= 25°C

d(off)

Turn-Off delay time — 110 130

Fall time — 38 56

Turn-On Switching Loss — 810 — I

= 9.0A, V

= 600V, V

=15V

13,15

off

Turn-Off Switching Loss — 680 — µJ R

=22Ω, L=1.0mH, L

=150nH, T

= 150°C

e

CT4

total

Total Switching Loss — 1490 —

Energy losses include tail & diode reverse recovery

WF1, WF2

d(on)

Turn-On delay time — 11 — I

= 9.0A, V

= 600V, V

= 15V

14,16

Rise time — 23 — ns R

= 22Ω, L = 1.0mH, L

= 150nH

CT4

d(off)

Turn-Off delay time — 130 — T

= 150°C

WF1

Fall time — 260 —

WF2

ies

Input Capacitance — 1070 — pF V

= 0V

oes

Output Capacitance — 63 — V

= 30V

res

Reverse Transfer Capacitance — 26 — f = 1.0Mhz

= 150°C, I

= 36A

RBSOA Reverse Bias Safe Operating Area FULL SQUARE V

= 960V, Vp =1200V

CT2

Rg = 22Ω, V

= +20V to 0V

SCSOA Short Circuit Safe Operating Area 10 — — µs T

= 150°C, V

= 600V, Vp =1200V

22, CT3

Rg = 22Ω, V

= +15V to 0V

WF4

Erec Reverse Recovery Energy of the Diode — 710 — µJ T

= 150°C

17,18,19

Diode Reverse Recovery Time — 140 — ns V

= 600V, I

= 9.0A

20,21

Peak Reverse Recovery Current — 12 — A V

= 15V, Rg = 20Ω, L =1.0mH, L

= 150nH

WF3

Conditions

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Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

Fig. 2 - Power Dissipation vs. Case

Temperature

Fig. 3 - Forward SOA

TC = 25°C, TJ ≤ 150°C; VGE =15V

Fig. 4 - Reverse Bias SOA

TJ = 150°C; VGE = 20V

0 20 40 60 80 100 120 140 160

TC (°C)

100

150

200

Ptot (W)

25 50 75 100 125 150

TC (°C)

IC (A)

10 100 1000 10000

VCE (V)

100

IC (A)

1 10 100 1000 10000

VCE (V)

0.1

100

IC (A)

10µsec

100µsec

Tc = 25°C

Tj = 150°C

Single Pulse

1msec

Fig. 5 - Typ. IGBT Output Characteristics

TJ = -40°C; tp = 80µs

Fig. 6 - Typ. IGBT Output Characteristics

TJ = 25°C; tp = 80µs

0246810

VCE (V)

ICE (A)

VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

0246810

VCE (V)

ICE (A)

VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

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Fig. 7 - Typ. IGBT Output Characteristics

TJ = 150°C; tp = 80µs

Fig. 8 - Typ. Diode Forward Characteristics

tp = 80µs

Fig. 10 - Typical VCE vs. VGE

TJ = 25°C

Fig. 9 - Typical VCE vs. VGE

TJ = -40°C

0246810

VCE (V)

ICE (A)

VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

5 101520

VGE (V)

VCE (V)

ICE = 4.5A

ICE = 9.0A

ICE = 18A

5 101520

VGE (V)

VCE (V)

ICE = 4.5A

ICE = 9.0A

ICE = 18A

Fig. 11 - Typical VCE vs. VGE

TJ = 150°C

Fig. 12 - Typ. Transfer Characteristics

VCE = 50V

4 6 8 10 12 14 16

VGE, Gate-to-Emitter Voltage (V)

ICE, Collector-to-Emitter Current (A)

TJ = 25°C

TJ = 150°C

5 101520

VGE (V)

VCE (V)

ICE = 4.5A

ICE = 9.0A

ICE = 18A

0.0 1.0 2.0 3.0 4.0 5.0

VF (V)

IF (A)

-40°C

25°C

150°C

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Fig. 13 - Typ. Energy Loss vs. IC

TJ = 150°C; L = 1.0mH; VCE = 600V, RG = 22Ω; VGE = 15V

Fig. 15 - Typ. Energy Loss vs. RG

TJ = 150°C; L = 1.0mH; VCE = 600V, ICE = 9.0A; VGE = 15V

Fig. 16 - Typ. Switching Time vs. RG

TJ = 150°C; L = 1.0mH; VCE = 600V, ICE = 9.0A; VGE = 15V

Fig. 14 - Typ. Switching Time vs. IC

TJ = 150°C; L = 1.0mH; VCE = 600V, RG = 22Ω; VGE = 15V

5 101520

IC (A)

400

800

1200

1600

2000

Energy (µJ)

EOFF

EON

0 5 10 15 20

IC (A)

100

1000

Swiching Time (ns)

tdOFF

tdON

020 40 60 80 100

RG (Ω)

400

600

800

1000

1200

1400

1600

Energy (µJ)

EON

EOFF

Fig. 17 - Typ. Diode IRR vs. IF

TJ = 150°C

Fig. 18 - Typ. Diode IRR vs. RG

TJ = 150°C

4 6 8 10 12 14 16 18 20

IF (A)

IRR (A)

RG = 5.0Ω

RG = 10Ω

RG = 20Ω

RG = 47Ω

010 20 30 40 50

RG (Ω)

IRR (A)

020 40 60 80 100

RG (Ω)

100

1000

Swiching Time (ns)

tdOFF

tdON

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Fig. 19 - Typ. Diode IRR vs. diF/dt

VCC = 600V; VGE = 15V; IF = 9.0A; TJ = 150°C

Fig. 20 - Typ. Diode QRR vs. diF/dt

VCC = 600V; VGE = 15V; TJ = 150°C

Fig. 21 - Typ. Diode ERR vs. IF

TJ = 150°C

Fig. 22 - VGE vs. Short Circuit Time

VCC = 600V; TC = 150°C

8 10121416

VGE (V)

Time (µs)

Current (A)

Tsc

Isc

0100 200 300 400

diF /dt (A/µs)

IRR (A)

0 5 10 15 20

IF (A)

400

600

800

1000

1200

Energy (µJ)

RG = 5.0Ω

RG = 10Ω

RG = 20Ω

RG = 47Ω

Fig. 23 - Typ. Capacitance vs. VCE

VGE= 0V; f = 1MHz

Fig. 24 - Typical Gate Charge vs. VGE

ICE = 9.0A; L = 600µH

0100 200 300 400 500

VCE (V)

100

1000

10000

Capacitance (pF)

Cies

Coes

Cres

0 1020304050

Q G, Total Gate Charge (nC)

VGE, Gate-to-Emitter Voltage (V)

VCES = 600V

VCES = 400V

0 100 200 300 400

diF /dt (A/µs)

1000

1500

2000

2500

3000

QRR (nC)

5.0Ω

10Ω

47Ω

20Ω

9.0A

18A

4.5A

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Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

Thermal Response ( Z thJC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

τJ

τ1

τ2

τ2τ3

τ3

R1R2

R2R3

Ci i/Ri

Ci= τi/Ri

τC

τ4

R4Ri (°C/W) τi (sec)

0.0107 0.000005

0.1816 0.000099

0.3180 0.001305

0.1910 0.009113

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

Thermal Response ( Z thJC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE ) Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

τJ

τ1

τ2

τ2τ3

τ3

R1R2

R2R3

Ci i/Ri

Ci= τi/Ri

τC

τ4

R4Ri (°C/W) τi (sec)

0.0103 0.000005

0.4761 0.000451

0.5749 0.001910

0.3390 0.012847

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Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

VCCDUT

80 V

DUT VCC

Fig.C.T.5 - Resistive Load Circuit

VCC

DUT

R =

VCC

ICM

G force

C sens

100K

DUT

0.0075µF

D1 22K

E force

C force

E sense

Fig.C.T.6 - BVCES Filter Circuit

Fig.C.T.3 - S.C. SOA Circuit

DUT

VCC

SCSOA

Fig.C.T.4 - Switching Loss Circuit

VCC

DUT /

DRIVER

diode clamp /

DUT

-5V

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Fig. WF3 - Typ. Diode Recovery Waveform

@ TJ = 150°C using Fig. CT.4

Fig. WF1 - Typ. Turn-off Loss Waveform

@ TJ = 150°C using Fig. CT.4

Fig. WF2 - Typ. Turn-on Loss Waveform

@ TJ = 150°C using Fig. CT.4

Fig. WF4 - Typ. S.C. Waveform

@ TJ = 150°C using Fig. CT.3

-900

-800

-700

-600

-500

-400

-300

-200

-100

100

-2.50 0.00 2.50 5.00

time (µS)

(V )

-12.5

-10

-7.5

-5

-2.5

2.5

7.5

12.5

(A )

Peak

10%

Peak

IRR

-100

100

200

300

400

500

600

700

800

900

-5 0 5 10

time(µs)

VCE (V )

-2

ICE (A)

90% I

5% V

5% I

Eoff Loss

-100

100

200

300

400

500

600

700

800

-5 0 5 10

Time (uS )

Vc e (V )

-10

Ice (A)

ICE

VCE

-100

100

200

300

400

500

600

700

800

900

-1.8 -0.8 0.2 1.2 2.2 3.2

time (µs )

(V)

-5

(A )

TEST CURRENT

90% test

current

5% V

10% test

current

Eon Loss

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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 08/2009

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial market.

Qualification Standards can be found on IR’s Web site.

TO-247AC Part Marking Information

TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

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TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/