© 2012 IXYS CORPORATION, All Rights Reserved DS100425B(11/12)
High Voltage
Power MOSFETs
Features
zInternational Standard Packages
zMolding Epoxies Weet UL 94 V-0
Flammability Classification
zFast Intrinsic Diode
zLow Package Inductance
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zHigh Voltage Power Supplies
zCapacitor Discharge
zPulse Circuits
IXTT12N150
IXTH12N150
VDSS = 1500V
ID25 = 12A
RDS(on) ≤≤
≤≤
≤ 2ΩΩ
ΩΩ
Ω
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1500 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C12A
IDM TC= 25°C, Pulse Width Limited by TJM 40 A
IATC= 25°C 6 A
EAS TC= 25°C 750 mJ
dv/dt IS≤ IDM, VDD ≤ VDSS,T
J ≤ 150°C 5 V/ns
PDTC= 25°C 890 W
TJ- 55 ... +150 °C
TJM 150 °C
Tstg - 55 ... +150 °C
TL1.6mm (0.062 in.) From Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque 1.13 / 10 Nm/lb.in.
Weight TO-268 4.0 g
TO-247 6.0 g
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 1500 V
VGS(th) VDS = VGS, ID = 250µA 2.5 4.5 V
IGSS VGS = ±30V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS = 0V 25 µA
TJ = 125°C 500 µA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 2 Ω
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXTH)
G
SD (Tab)
D
TO-268 (IXTT)
S
G
D (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTT12N150
IXTH12N150
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
Note 1. Pulse test, t ≤ 300µs, duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 8 13 S
Ciss 3720 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 240 pF
Crss 80 pF
td(on) 26 ns
tr 16 ns
td(off) 53 ns
tf 14 ns
Qg(on) 106 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 17 nC
Qgd 50 nC
RthJC 0.14 °C/W
RthCS TO-247 0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 12 A
ISM Repetitive, Pulse Width Limited by TJM 48 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 1.2 µs
IRM 24.5 A
QRM 14.8 µC
IF = 6A, -di/dt = 100A/µs
VR = 100V, VGS = 0V
TO-247 Outline
Terminals: 1 - Gate 2 - Drain
3 - Source
TO-268 Outline
Terminals: 1 - Gate 2,4 - Drain
3 - Source
e
∅ P
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
© 2012 IXYS CORPORATION, All Rights Reserved
Fi g . 1. Ou tp u t C har acter i stics @ T
J
= 25ºC
0
2
4
6
8
10
12
14
0 5 10 15 20 25 30
V
DS
- Volt s
I
D
- Amperes
V
GS
= 10V
7V
6
V
5.5
V
5
V
Fi g . 2. Ou tp u t C h ar a cter i sti cs @ T
J
= 125ºC
0
1
2
3
4
5
6
7
8
0 5 10 15 20 25 30
V
DS
- Vo lts
I
D
- Amperes
5V
4V
V
GS
= 10V
6V
Fig. 3. R
DS(on)
Normalized to I
D
= 6A Valu e vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 12A
I
D
= 6A
Fig. 4. R
DS(on)
Normalized to I
D
= 6A Valu e vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
02468101214
I
D
- Amperes
R
DS(on)
- Normali zed
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Input Admittance
0
2
4
6
8
10
12
14
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
- Vo lts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 5. Maximum Drain Current vs.
Case Tempe ratu r e
0
2
4
6
8
10
12
14
-50 -25 0 25 50 75 100 125 150
T
C
- Deg re es Centi grad e
I
D
- Amperes
IXTT12N150
IXTH12N150
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTT12N150
IXTH12N150
IXYS REF: T_12N150 (8M) 5-23-11
Fig. 7. Transconductance
0
2
4
6
8
10
12
14
16
18
20
22
02468101214
I
D
- Amp e res
g
f s - Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 8. Forward Voltage Drop of Intrinsic Diode
0
5
10
15
20
25
30
35
40
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
SD
- Volt s
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 9. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090100110
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 750V
I
D
= 6A
I
G
= 10mA
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volt s
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maximu m Tran si en t Th er mal I mp ed an ce
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fi g . 11. F o r war d -Bi as Safe Op er atin g Area
0.1
1
10
100
10 100 1,000 10,000
V
DS
- Vo lt s
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Sing le Pulse
100µs
1ms
R
DS(on)
Limit 25µs
10ms
DC