European Power-
Semiconductor and
Electronics Company
G m b H + C o . K G
M a r k e t i n g I n f o r m a t i o n
FD 400 R 12 KF4
2,5 deep
7 16
C1
C2E1
E2
M8
55,2
1 1 , 8 5
31,5
28
E1
C1
40
53
G 1
2,5 deep
M4
130
1 1 4
screwing depth
ma x. 8
screwing depth
max. 8
C1
E1
G 1
E1
C1
C2 (K)
E2 (A)
A15/97 Mod-E/ 21.Jan 1998 G.Schulze
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F D 4 0 0 R 1 2 K F 4
H ö c h s t z u l ä s s i g e W e r t e / M a x i m u m r a t e d v a l u e s
El e k t r i s c he E i g e n s c ha f t e n / El e c t r i c a l p r o p e r t i es
Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES 1200 V
Kollektor-Dauergleichstrom DC-collector current IC 400 A
Periodischer Kollektor Spitzenstrom repetitive peak collctor current tp=1 ms ICRM 800 A
Gesamt-Verlustleistung total power dissipation tC =25°C, Transistor /transistor Ptot 2700 W
Gate-Emitter-Spitzenspannung gate-emitt er peak voltage VGE ± 20 V
Dauergleichstrom DC forward current IF 400 A
Periodischer Spitzenstrom repetitive peak forw. current tp=1ms IFRM 800 A
Isolations-Prüfspannung insulation test voltage RMS, f=50 Hz, t= 1 min. VISOL 2,5 kV
C h a r a k t e r i s t i s c h e W e r t e / C h a r a c t e r i s t i c v a l u e s : T r a n s i s t o r m i n. typ. m a x .
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage i
C =400A, v
GE =15V, tvj =25°C v CE sat - 2,7 3,2 V
i
C =400A, v
GE =15V, tvj =125°C - 3,3 3,9 V
Gate-Schwellenspannung gate threshold volt age i
C =16mA, vCE =vGE , tvj =25°C v GE(th) 4,5 5,5 6,5 V
Eingangskapazität input capacity fO=1MHz,tvj =25°C,vCE =25V, vGE =0V Cies - 28 - nF
Kollektor-Emitter Reststrom collector-emitter cut-off current v CE =1200V, vGE =0V, tvj =25°C i
CES - 8 - mA
v CE =1200V, vGE =0V, tvj =125°C - 32 - mA
Gate-Emitter Reststrom gate leakage current v CE =0V, vGE =20V, tvj =25°C i
GES - - 400 nA
Emitter-Gate Reststrom gate leakage current v CE =0V, vEG =20V, tvj =25°C i
EGS - - 400 nA
Einschaltzeit (induktive Last) turn-on time (inductive load) i
C =400A,vCE =600V,vL=±15V,RG =3,6 ,tvj = 25°C ton - 0,7 - µs
i
C =400A,vCE =600V,vL=±15V,RG =3,6 ,tvj =125°C - 0,8 - µs
Speicherzeit (induktive Last) storage time (inductive load) i
C =400A,vCE =600V,vL=±15V,RG =3,6 ,tvj = 25°C ts - 0,9 - µs
i
C =400A,vCE =600V,vL=±15V,RG =3,6 ,tvj =125°C - 1,0 - µs
Fallzeit (induktive Last) fall time (inductive load) i
C =400A,vCE =600V,vL=±15V,RG =3,6 ,tvj = 25°C tf - 0,10 - µs
i
C =400A,vCE =600V,vL=±15V,RG =3,6 ,tvj =125°C - 0,15 - µs
Einschaltverlustenergie pro puls turn-on energie per pulse i
C =400A, v
CE =600V, Ls=70nH Eon
v L=±15V, RG =3,6 , tvj =125°C - 70 - mWs
Abschaltverlustenergie pro Puls turn-off energie loss per pulse i
C =400A, v
CE =600V, Ls=70nH Eoff
v L=±15V, RG =3,6 , tvj =125°C - 60 - mWs
Charakteristische Werte / Characteristic values
Inversdiode / Inverse diode
Durchlaßspannung forward voltage i
F =400A, v
GE =0V, tvj =25°C v F - 2,2 2,7 V
i
F =400A, v
GE =0V, tvj =125°C - 2,0 2,5 V
Rückstromspitze peak reverse rec overy current i
F =400A, v
RM =600V, vEG = 1 0 V IR M
-diF/dt = 2,0 kA/µs, tvj = 2 5 ° C - 140 - A
-diF/dt = 2,0 kA/µs, tvj = 1 2 5 ° C - 240 - A
Sperrverzögerungsladung recovered charge i
F =400A, v
RM =600V, vEG = 1 0 V Qr
-diF/dt = 3,0 kA/µs, tvj = 2 5 ° C - 18 - µAs
-diF/dt = 3,0 kA/µs, tvj = 1 2 5 ° C - 50 - µAs
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand thermal resistance, junction to case Transistor / transistor, DC RthJC 0,023 °C/W
T r a n s i s t o r, D C , p r o Z w ei g / p e r a r m 0,046 °C/W
Diode, DC, pro Modul/per module 0,044 °C/W
Diode, DC, pro Zweig/per arm 0,088 °C/W
Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per Module RthCK 0,01 °C/W
pro Zweig / per arm 0,02 °C/W
Höchstzul. Sperrschichttemperatur max. junction temperature pro Modul / per Module tvj max 150 °C
Betriebstemperatur operating temperature T r a n s is t o r / t r a n s i s t o r tc op
-40...+150 °C
Lagertemperatur storage temperature tstg
-40...+125 °C
M e c h a n i s c h e E i g e n s c h a f t e n / M e c h a n i c a l p r o p e r t i e s
Gehäuse, siehe Anlage case, see appendix Seite / page 1
Innere Isolation internal insulation AI2O3
Anzugsdrehmoment f. mech. Befestigung mounting torque terminals M6 / tolerance +/-15% M1 5 Nm
Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque terminals M4 / tolerance +/-15% M2 2 Nm
terminals M8 8...10 Nm
Gewicht weight G ca. 1500 g
Bedingung für den Kurzschlußschutz / Conditions for short-circuit protection
tfg
= 10 µs VCC
= 750 V
v L = ±15 V v CEM
= 900 V
RGF
= R
GR = 3,6 iCM K1
3500 A
tvj = 125°C iCM K2
3000 A
Unabhängig davon gilt bei abweichenden Bedingungen / with regard to other conditions CEM
= V CES
- 20nH x |di
c/dt|
Mit dieser technischen Information werden Halbleiterbauelemente spez ifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den
zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in
combination with the belonging technical notes.
v
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FD 400 R12 KF4
FD40 0 R12K F4
iC
[A]
Bild/Fig. 3
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
VCE = 20 V
v G E [V]
5 6 7 8 9 10 1 1 12
0
t vj =
125 °C
25 °C
FD40 0R12K F4
iC
[A]
Bild/Fig. 4
Rückwärts-Arbeitsbereich
Reverse biased safe operating area
tvj = 125 °C, vLF = vLR = 15 V, RG = 3 , 6
v CE [V]
0
0
400
600
800
1000
200 12001000 1400
200
400 600 800
FD40 0 R12K F4
iC
[A]
Bild/Fig. 1
Kollektor-Emitter-Spannung im Sättigungsbereich (typisch)
Collector-emitter-voltage in saturation region (typical)
VGE = 15V
-----Tvj = 25 °C
___Tvj = 125 °C
v CE [V]
1.0 1. 5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
200
800
400
600
FD400R12KF4
iC
[A]
Bild/Fig. 2
Kollektor-Emitter-Spannung im Sättigungsbereich (typisch)
Collector-emitter-voltage in saturation region (typical)
tvj = 125 °C
v
CE [V]
1.0 1.5 2.0 2.5 3. 0 3.5 4.0 4.5 5. 0
0
8 V
9 V
10 V
12 V
15 V
V GE = 20 V
100
300
500
700
200
800
400
600
100
300
500
700
200
800
400
600
100
300
500
700
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FD 400 R12 KF4
FD400R12KF4
Z(th)JC
[°C/W]
Bild/Fig. 5
T r a n s i e n t e r i n n e r e r W ä r m e w id e r s ta n d j e Z w e i g ( D C )
T r a n s i e n t t h e r m a l i m p e d a n c e p e r a r m ( D C )
10-3 2 4 10-2 10-1 100
1 0-3
10-2
2
3
5
2 4 2 4 2
t [s]
101
4
IGBT
Diode
FD400R12KF4
iF
[A]
Bild/Fig. 6
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of the inverse diode (typical)
tvj = 25 °C
tvj = 125 °C
v F [V]
01.0 1.5 2.0 2.50.5 3.0
10-1
2
3
6
200
800
400
600
100
300
500
700
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