MBR2070CT thru 20100CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
MBR2070CT
70
49
70
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
20
150
T
J
Operating Temperature Range
-55 to +150
C
T
STG
Storage Temperature Range
-55 to +175
C
Typical Thermal Resistance (Note 2)
R
0JC
2.0
C/W
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
V
F
V
Voltage Rate of Change (Rated VR)
dv/dt 10000
I
R
@T
J
=125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ
=25 C 0.1
100
mA
T
C
=120 C
Maximum Forward
Voltage (Note 1)
T
J
=125 C
T
J
=25 C
I
F
=10A @
I
F
=10A @
I
F
=20A @
I
F
=20A @
T
J
=125 C
T
J
=25 C
MBR2080CT
80
56
80
MBR2090CT
90
63
90
MBR20100CT
100
70
100
V/us
0.75
0.85
0.85
0.95
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
14.22 15.88
10.67
9.65
2.54 3.43
6.86
5.84
8.26 9.28
- 6.35
12.70 14.73
0.51
2.79
N
M
L
K
J
I 1.14
2.29
0.64 0.30
3.53 4.09
3.56 4.83
1.14 1.40
2.92
2.03
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
13
2
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
- 70
to
100
Volts
FORWARD CURRENT
- 20
Amperes
Typical Junction Capacitance
per element (Note 3)
C
J
250
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
pF
SEMICONDUCTOR
LITE-ON
REV. 6, Aug-2007, KTHC09
RATING AND CHARACTERISTIC CURVES
MBR2070CT thru MBR20100CT
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
15 10 50 100
220
0
25
50
75
100
125
150
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
25
75 100 125 150
5
0
50
20
175
8.3ms Single Half-Sine-Wave
15
0
10
RESISTIVE OR INDUCTIVE LOAD
CASE TEMPERATURE , C
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
REVERSE VOLTAGE , VOLTS
10
1100
1000
100
10
0.1 4
T
J
= 25 C, f= 1MHz
INSTANTANEOUS FORWARD CURRENT ,(A)
1.0
10
100
0.1
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
0.2 0.3 0.7 0.8
1.0
10
100
0.4 0.5 0.6
0.1
1.0
0.9
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
0.1
PULSE WIDTH 300us
2% Duty cycle
T
J
= 25 C
RATED PEAK REVERSE VOLTAGE (%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(mA)
20 40 120 140
0
0.001
0.1
1.0
100
10
60 80 100
T
J
= 100 C
0.01
T
J
= 25 C
T
J
= 75 C
1E-3 1E-2 1E-1 1E+0
DURATION TIME ( SEC. )
0
20
40
60
80
100
120
140
160
IM, SURGE FORWARD CURRENT (A)
FIG.6 - MAXIMUM NON REPETITIVE SURGE PEAK FORWARD
CURRENT VERSUS OVERLOAD DURATION PER DIODE
Tj = 25
℃
Tj = 125
℃
Duty=50%
IM
t