DSP8-12S
Phase leg
Standard Rectifier
12/4 3
Part number
DSP8-12S
Backside: anode/cathode
FAV
F
VV1.08
RRM
8
1200
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
TO-263 (D2Pak)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20130107bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSP8-12S
V = V
A²s
A²s
A²s
A²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.16
R1.5 K/W
R
min.
8
V
RSM
V
10T = 25°C
VJ
T = °C
VJ
mA0.2V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
160
P
tot
100 WT = 25°C
C
RK/W
8
1200
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Unit
1.35
T = 25°C
VJ
150
V
F0
V0.79T = °C
VJ
175
r
F
33 mΩ
V1.08T = °C
VJ
I = A
F
V
8
1.34
I = A
F
16
I = A
F
16
threshold voltage
slope resistance for power loss calculation only
µA
150
V
RRM
V1200
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
4
j
unction capacitance V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
175
120
130
50
50
A
A
A
A
100
110
72
70
1200
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1300
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20130107bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSP8-12S
Ratings
Product M
a
r
k
i
n
g
Date Code
Part No.
Logo
Assembly Code
XXXXXXXXX
IXYS
yywwz
000000
Assembly Line
DSP8-12A TO-220AB (3) 1200
Package
T
VJ
°C
T
stg
°C150
storage temperature -55
Weight g2
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
F
C
N60
mount ing for ce w i th cli p 20
I
RMS
RMS current 25 A
per terminal
175-55
DSP8-12AC
DSP8-08S
ISOPLUS220AB (3)
TO-263AB (D2Pak) (2)
1200
800
DSP8-08AS
DSP8-08A
TO-263AA (D2Pak) (3)
TO-220AB (3)
800
800
TO-263
(
D2Pak
)
Similar Part Package Voltage class
DSP8-12AS TO-263AA (D2Pak) (3) 1200
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
DSP8-12S 499390Tape & Reel 800DSP8-12SStandard
threshold voltage V0.79
mΩ
V
0 max
R
0 max
slope resistance * 30
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
175°C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130107bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSP8-12S
W
c2
A
A1
c
L
E
2x e
L1
D
321
3.81
(0.150)
1.78
(0.07)
2.54 (0.100)
3.05
(0.120)
10.92
(0.430)
9.02
(0.355)
mm (Inches)
Recommended min. foot print
3x b2
E1
2x b
H
D1
Supplier
Option
L2
4
minmaxminmax
A 4.06 4.83 0.160 0.190
A1
A2
b 0.51 0.99 0.020 0.039
b2 1.14 1.40 0.045 0.055
c 0.40 0.74 0.016 0.029
c2 1.14 1.40 0.045 0.055
D 8.38 9.40 0.330 0.370
D1 8.00 8.89 0.315 0.350
D2
E 9.65 10.41 0.380 0.410
E1 6.22 8.50 0.245 0.335
e
e1
H 14.61 15.88 0.575 0.625
L 1.78 2.79 0.070 0.110
L1 1.02 1.68 0.040 0.066
Wtyp.
0.02 0.040 typ.
0.0008 0.002
Dim. Millimeter Inches
typ. 0.10 typ. 0.004
2.41 0.095
0.098
4.28 0.169
All dimensions conform with
and/or within JEDEC standard.
2,54 BSC 0,100 BSC
2.5
12/4 3
Outlines TO-263 (D2Pak)
IXYS reserves the right to change limits, conditions and dimensions. 20130107bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSP8-12S
0.001 0.01 0.1 1
40
60
80
100
2345678011
10
1
10
2
0.60.81.01.21.41.6
0
4
8
12
16
20
024681012
0
4
8
12
16
0 25 50 75 100 125 150 175 200
1 10 100 1000 10000
0.0
0.4
0.8
1.2
1.6
0 50 100 150 200
0
4
8
12
16
20
24
28
50 Hz, 80% V
RRM
T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
= 150°C
V
R
=0 V
T
VJ
= 45°C
I
F
[A]
V
F
[V]
I
FSM
[A]
t[s]
I
2
t
[A
2
s]
t[ms]
P
tot
[W]
I
F(AV)M
[A] T
amb
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs.
case temperature
Fi
g
. 6 Transient thermal impedance
j
unction to case
t[ms]
Constants for Z
thJC
calculation:
iR
thi
(K/W) t
i
(s)
1 0.155 0.0005
2 0.332 0.0095
3 0.713 0.17
40.3 0.8
5 0.00001 0.00001
T
VJ
= 150°C
125°C
25°C
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
R
thJA
:
4 K/W
8 K/W
10 K/W
12 K/W
16 K/W
20 K/W
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130107bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
