BAT42WS, BAT43WS www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES * These diodes feature very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges * For general purpose applications DESIGN SUPPORT TOOLS click logo to get started * AEC-Q101 qualified available * Base P/N-E3 - RoHS-compliant, commercial grade * Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Models Available * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: SOD-323 Weight: approx. 4.3 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE BAT42WS-E3-08 or BAT42WS-E3-18 BAT42WS BAT42WS-HE3-08 or BAT42WS-HE3-18 BAT43WS-E3-08 or BAT43WS-E3-18 BAT43WS BAT43WS-HE3-08 or BAT43WS-HE3-18 CIRCUIT CONFIGURATION TYPE MARKING Single L2 Single L3 REMARKS Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE VRRM 30 V IF 200 mA tp < 1 s, < 0.5 IFRM 500 mA tp < 10 ms IFSM 4 A Ptot 150 mW SYMBOL VALUE UNIT RthJA 650 K/W Tj 125 C Operating temperature range Top -55 to +125 C Storage temperature range Tstg -55 to +150 C Repetitive peak reverse voltage Forward continuous current (1) Repetitive peak forward current Surge forward current Power (1) (1) dissipation (1) UNIT Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air TEST CONDITION (1) Junction temperature Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 1.6, 01-Jun-17 Document Number: 81813 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAT42WS, BAT43WS www.vishay.com ELECTRICAL CHARACTERISTICS Vishay Semiconductors (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. Reverse breakdown voltage IR = 100 A (pulsed) V(BR) 30 VR = 25 V IR Leakage current (1) Reverse recovery time MAX. UNIT 0.5 A V IR 100 A IF = 200 mA VF 1000 mV VF 400 mV 650 mV voltage (1) Diode capacitance TYP. VR = 25 V, Tj = 100 C IF = 10 mA Forward PART BAT42WS IF = 50 mA BAT42WS VF IF = 2 mA BAT43WS VF IF = 15 mA BAT43WS VF VR = 1 V, f = 1 MHz CD IF = 10 mA, IR = 100 mA, iR = 1 mA, RL = 100 trr 260 330 mV 450 mV 7 pF 5 ns Note (1) Pulse test; t 300 s, t /T < 0.02 p p 250 1000 IR - Reverse Leackage Current (A) Ptot - Admissible Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 200 150 100 50 0 0 50 100 50 C 1 25 C 0.1 0.01 0 10 20 30 40 VR - Reverse Voltage (V) 50 Fig. 3 - Typical Reverse Characteristics 1000 14 100 125 C - 40 C 10 25 C 1 0.1 CD - Diode Capacitance (pF) I F - Forward Current (mA) 75 C 18444 Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature 12 10 8 6 4 2 0 0.01 0 18443 100 C 10 150 Tamb - Ambient Temperature (C) 20981 125 C 100 200 400 600 800 1000 1200 VF - Instantaneous Forward Voltage (mV) Fig. 2 - Typical Forward Characteristics 0 18445 5 10 15 20 25 30 VR - Reverse Voltage (V) Fig. 4 - Typical Capacitance vs. Reverse Voltage Rev. 1.6, 01-Jun-17 Document Number: 81813 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAT42WS, BAT43WS www.vishay.com Vishay Semiconductors 0.1 [0.004] max. 0.15 [0.006] 0.10 [0.004] 0.2 [0.008] 0.8 [0.031] 1.15 [0.045] PACKAGE DIMENSIONS in millimeters (inches): SOD-323 0 - 8 0.40 [0.016] 0.25 [0.010] 1.95 [0.077] 2.50 [0.098] 1.1 [0.043] 0.20 [0.008] 0.40 [0.016] 2.85 [0.112] 1.5 [0.059] 1.60 [0.063] Cathode bar Footprint recommendation: 1.6 [0.063] Document no.: S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 6 - Date: 23.Sept.2016 17443 0.8 [0.031] 0.6 [0.024] 0.8 [0.031] Rev. 1.6, 01-Jun-17 Document Number: 81813 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: BAT42WS-V-GS08 BAT42WS-V-GS18 BAT43WS-V-GS08 BAT43WS-V-GS18 BAT42WS-G3-18 BAT43WS-E3-18 BAT42WS-HE3-08 BAT43WS-G3-18 BAT42WS-E3-08 BAT43WS-G3-08 BAT43WS-HE3-08 BAT42WS-G3-08 BAT42WS-E3-18 BAT43WS-HE3-18 BAT43WS-E3-08 BAT42WS-HE3-18